IPB039N10N3GATMA1 vs IPB60R040CFD7ATMA1 비교
다음의 상세 나란히 비교: IPB039N10N3GATMA1 제조: Infineon 및 IPB60R040CFD7ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IPB039N10N3GATMA1 | IPB60R040CFD7ATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $2.28 | $5.19 |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | Superjunction (SJ) N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TC=25C | 160 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD) at TC=25C | 214 W | — |
| On-State Resistance RDS(on) at VGS=10V (typ) | 3.9 mOhm | — |
| Gate-Source Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | — |
| Gate-Drain Charge (Qgd) | [DATA_NEEDED: Qgd typ] | — |
| 동작 온도 범위 | -55C to +175C | -55°C to +150°C |
| 패키지 | PG-TO263-7 (D2PAK-7, 6 leads + tab) | PG-TO263-3-2 (D2PAK) |
| 실장 유형 | Surface Mount | Surface Mount |
| MSL 레벨 | 1 | 1 |
| RoHS / Halogen-Free Status | RoHS compliant, halogen-free | — |
| Series / Family | OptiMOS 3 | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | CoolMOS CFD7 |
| Drain-Source Voltage (VDS) | — | 600 V |
| Continuous Drain Current (ID, Tc=25°C) | — | 50 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 40 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 4 V |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: Qg] |
| 전력 손실 (TC=25°C) | — | 227 W |
| Integrated Body Diode | — | Yes - ultra-fast CoolMOS CFD7 diode |
| RoHS 상태 | — | Compliant |
| Lead-Free | — | Yes |
| Target Applications | — | Soft-switching topologies (ZVS phase-shift full-bridge, LLC) |