IPB039N10N3GATMA1 vs IPB60R040CFD7ATMA1 Comparison
Detailed side-by-side comparison of IPB039N10N3GATMA1 by Infineon and IPB60R040CFD7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB039N10N3GATMA1 - 100V 160A OptiMOS 3 N-Channel MOSFET | Infineon
IPB039N10N3GATMA1 β ActiveInfineon
IPB60R040CFD7ATMA1 - 600V 50A 40mΞ© CoolMOS CFD7 MOSFET | Infineon
IPB60R040CFD7ATMA1 β ActiveSpecification Comparison
| Parameter | IPB039N10N3GATMA1 | IPB60R040CFD7ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.28 | $5.19 |
| FET Type | N-Channel | β |
| Technology | MOSFET (Metal Oxide) | Superjunction (SJ) N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID) at TC=25C | 160 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD) at TC=25C | 214 W | β |
| On-State Resistance RDS(on) at VGS=10V (typ) | 3.9 mOhm | β |
| Gate-Source Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | β |
| Gate-Drain Charge (Qgd) | [DATA_NEEDED: Qgd typ] | β |
| Operating Temperature Range | -55C to +175C | -55Β°C to +150Β°C |
| Package | PG-TO263-7 (D2PAK-7, 6 leads + tab) | PG-TO263-3-2 (D2PAK) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 | 1 |
| RoHS / Halogen-Free Status | RoHS compliant, halogen-free | β |
| Series / Family | OptiMOS 3 | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | CoolMOS CFD7 |
| Drain-Source Voltage (VDS) | β | 600 V |
| Continuous Drain Current (ID, Tc=25Β°C) | β | 50 A |
| On-Resistance RDS(on) max @ VGS=10V | β | 40 mΞ© |
| Gate Threshold Voltage VGS(th) typ | β | 4 V |
| Total Gate Charge Qg typ | β | [DATA_NEEDED: Qg] |
| Power Dissipation (Tc=25Β°C) | β | 227 W |
| Integrated Body Diode | β | Yes - ultra-fast CoolMOS CFD7 diode |
| RoHS Status | β | Compliant |
| Lead-Free | β | Yes |
| Target Applications | β | Soft-switching topologies (ZVS phase-shift full-bridge, LLC) |