IPB120N04S402ATMA1 vs IPC70N04S5L4R2ATMA1 비교
다음의 상세 나란히 비교: IPB120N04S402ATMA1 제조: Infineon 및 IPC70N04S5L4R2ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IPB120N04S402ATMA1 | IPC70N04S5L4R2ATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $1.85 | $0.78 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS-T2 | — |
| FET Type | N-Channel, Enhancement Mode | N-Channel |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID, TC) | 120 A | — |
| Power Dissipation (PD, TC) | 158 W | — |
| RDS(on) (typ @ VGS=10 V) | 1.8 mΩ | — |
| 패키지 | PG-TO263-3 (D2PAK) | PG-TDSON-8-34 (Surface Mount) |
| 실장 유형 | Surface Mount | Surface Mount |
| 핀 수 | 3 (2 + Tab) | — |
| 동작 온도 범위 | -55 °C to +175 °C | — |
| Maximum Junction Temperature | 175 °C | — |
| Gate Threshold Voltage (VGS(th), typ) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge (Qg, typ) | [DATA_NEEDED: total gate charge] | — |
| Avalanche Energy Rating | 100% Avalanche Tested | — |
| 습도 민감도 레벨 (MSL) | MSL1 (per JEDEC J-STD-020, up to 260 °C peak reflow) | — |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| RoHS Compliance | Green Product (RoHS compliant) | — |
| Technology | — | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | — | 40 V |
| Continuous Drain Current (Id) @ Tc=25°C | — | 70 A |
| Power Dissipation (Pd) @ Tc=25°C | — | 50 W |
| R_DS(on) Max @ Vgs=10V | — | 4.2 mΩ (typ) |
| Gate Threshold (Vgs(th)) | — | Logic Level (4.5 V max Rds On, Min Rds On) |
| Drive Voltage (Max Rds On, Min Rds On) | — | 4.5 V |
| Operating Temperature (Tj) | — | -55°C to +175°C |
| MSL 레벨 | — | MSL1 (up to 260°C peak reflow) |
| Avalanche Tested | — | 100% (60 A production test) |
| RoHS 상태 | — | Compliant (Green Product) |
| Configuration | — | Single with Built-in Diode |
| Case Connection | — | DRAIN |