IPC100N04S52R8ATMA1 vs IAUC60N04S6L030HATMA1 비교
다음의 상세 나란히 비교: IPC100N04S52R8ATMA1 제조: Infineon 및 IAUC60N04S6L030HATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IPC100N04S52R8ATMA1 | IAUC60N04S6L030HATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $1.18 | $0.94 |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID, Tc=25C) | 100 A | — |
| Continuous Drain Current (ID, Tc=100C) | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max] | — |
| Gate Threshold Voltage (VGS(th), typ) | [DATA_NEEDED: VGS(th) typical] | — |
| On-State Resistance RDS(on) typ @ VGS=10V | 2.8 mOhm | — |
| On-State Resistance RDS(on) max @ VGS=10V | [DATA_NEEDED: RDS(on) max] | — |
| Power Dissipation (PD, Tc=25C) | 75 W | — |
| 동작 접합 온도 | -55C to +175C | -55 C to +175 C |
| 패키지 | PG-TDSON-8-34 (TDSON-8 EP) | PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm) |
| 실장 유형 | Surface Mount | Surface Mount |
| MSL 레벨 | 1 (260C peak reflow) | 1 (per JEDEC J-STD-020) |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 (per part number suffix) |
| Avalanche Tested | 100% (per Infineon standard) | — |
| RoHS / Green Product | Yes (RoHS compliant) | — |
| Manufacturer | — | Infineon Technologies |
| Part Series | — | OptiMOS 6 |
| Configuration | — | Half-Bridge (2 N-Channel) |
| Continuous Drain Current (ID) at TJ | — | 60 A |
| On-Resistance R_DS(on) at VGS=10V | — | 3.0 mOhm (typical) |
| Total Gate Charge (Qg) at VGS=10V | — | 35 nC |
| Output Capacitance (Coss) | — | 2.128 nF |
| Reverse Transfer Capacitance (Crss) | — | 596 pF |
| Gate Threshold Voltage (VGS(th)) | — | 2 V |
| Maximum Power Dissipation (PD) at TC | — | 75 W |
| RoHS 상태 | — | Compliant |