IPC100N04S52R8ATMA1 vs IAUC60N04S6L030HATMA1 Comparison
Detailed side-by-side comparison of IPC100N04S52R8ATMA1 by Infineon and IAUC60N04S6L030HATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPC100N04S52R8ATMA1
IPC100N04S52R8ATMA1 - 40V 100A N-Ch OptiMOS MOSFET | Infineon
IPC100N04S52R8ATMA1 β ActiveInfineon
IAUC60N04S6L030HATMA1
IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon
IAUC60N04S6L030HATMA1 β ActiveSpecification Comparison
| Parameter | IPC100N04S52R8ATMA1 | IAUC60N04S6L030HATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.18 | $0.94 |
| Polarity | N-Channel | β |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID, Tc=25C) | 100 A | β |
| Continuous Drain Current (ID, Tc=100C) | [DATA_NEEDED: ID at Tc=100C] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max] | β |
| Gate Threshold Voltage (VGS(th), typ) | [DATA_NEEDED: VGS(th) typical] | β |
| On-State Resistance RDS(on) typ @ VGS=10V | 2.8 mOhm | β |
| On-State Resistance RDS(on) max @ VGS=10V | [DATA_NEEDED: RDS(on) max] | β |
| Power Dissipation (PD, Tc=25C) | 75 W | β |
| Operating Junction Temperature | -55C to +175C | -55 C to +175 C |
| Package | PG-TDSON-8-34 (TDSON-8 EP) | PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (260C peak reflow) | 1 (per JEDEC J-STD-020) |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 (per part number suffix) |
| Avalanche Tested | 100% (per Infineon standard) | β |
| RoHS / Green Product | Yes (RoHS compliant) | β |
| Manufacturer | β | Infineon Technologies |
| Part Series | β | OptiMOS 6 |
| Configuration | β | Half-Bridge (2 N-Channel) |
| Continuous Drain Current (ID) at TJ | β | 60 A |
| On-Resistance R_DS(on) at VGS=10V | β | 3.0 mOhm (typical) |
| Total Gate Charge (Qg) at VGS=10V | β | 35 nC |
| Output Capacitance (Coss) | β | 2.128 nF |
| Reverse Transfer Capacitance (Crss) | β | 596 pF |
| Gate Threshold Voltage (VGS(th)) | β | 2 V |
| Maximum Power Dissipation (PD) at TC | β | 75 W |
| RoHS Status | β | Compliant |