IPC100N04S52R8ATMA1 - 40V 100A N-Ch OptiMOS MOSFET | Infineon
부품 번호: IPC100N04S52R8ATMA1 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $1.95 | $1.95 |
| 10 | $1.78 | $17.80 |
| 100 | $1.52 | $152.00 |
| 500 | $1.34 | $670.00 |
| 1,000 | $1.18 | $1,180.00 |
IPC100N04S52R8ATMA1 개요
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device used as a fast electronic switch or amplifier in power circuits. N-channel MOSFETs conduct between drain and source when a positive gate-source voltage exceeds the threshold, and they sit within the broader transistor -> discrete semiconductor -> semiconductor taxonomy. OptiMOS is Infineon's trench MOSFET technology platform that minimizes RDS(on) and gate charge to maximize efficiency in switching applications.
Key features include an exceptionally low typical on-state resistance of approximately 2.8 mOhm at VGS=10V, AEC-Q101 automotive qualification with MSL1 (260C peak reflow) robustness, and an operating junction temperature range of -55C to +175C. The PG-TDSON-8-34 package features an exposed drain pad (EP) that provides a low thermal resistance path to the PCB, allowing the device to sustain high continuous currents when properly mounted on adequate copper area. The part is Green Product (RoHS compliant) and 100% avalanche-tested per Infineon reliability standards.
Technically, the IPC100N04S52R8ATMA1 is built on OptiMOS 5 40V technology, employing a shielded-gate trench structure that simultaneously reduces conduction loss (RDS(on) * ID) and switching loss (driven by gate charge Qg and output capacitance Coss). The 8-pin TDSON-8-34 footprint is the standard Infineon high-current automotive MOSFET outline used across 40V, 60V, and 100V OptiMOS families, enabling easy migration between voltage grades.
Typical applications include automotive 12V/24V battery switching, DC-DC converter high-side switches, motor drive H-bridges (12V automotive loads such as seat motors, window lifters, and fuel pumps), solenoid drivers, and reverse-polarity protection circuits. The combination of low RDS(on), high current rating, and automotive qualification also suits e-mobility 48V mild-hybrid auxiliary systems and industrial switched-mode power supplies that must survive automotive-grade transients.
When designing with this device, allocate at least 1 cm^2 of 2 oz copper on the drain pad to keep junction-to-ambient thermal resistance within usable bounds at full load. Gate drive should use a 10V enhancement supply with a gate resistor of 10-47 Ohm to control switching dV/dt and limit ringing on long gate traces.
드롭인 대체품: IPC100N04S52R8ATMA1 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: IPC100N04S52R8ATMA1 (동일 폼 팩터 및 풋프린트) — 차이점: MSL Level, Package, Avalanche Tested, Automotive Qualification, Operating Junction Temperature.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
IPC100N04S51R7ATMA1
✅ 드롭인✓ 재고 있음
$0.82 / 개
데이터시트 보기 →IPC100N04S5L1R5ATMA1
✅ 드롭인✓ 재고 있음
$1.18 / 개
데이터시트 보기 →IPC70N04S5L4R2ATMA1
✅ 드롭인✓ 재고 있음
$0.78 / 개
데이터시트 보기 →IAUC60N04S6L030HATMA1
✅ 드롭인✓ 재고 있음
$0.94 / 개
데이터시트 보기 →IPC100N04S52R8ATMA1 최대 정격 & 전기적 특성
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID, Tc=25C) | 100 A |
| On-State Resistance RDS(on) typ @ VGS=10V | 2.8 mOhm |
| Power Dissipation (PD, Tc=25C) | 75 W |
| 동작 접합 온도 | -55C to +175C |
| 패키지 | PG-TDSON-8-34 (TDSON-8 EP) |
| 실장 유형 | Surface Mount |
| MSL 레벨 | 1 (260C peak reflow) |
| Automotive Qualification | AEC-Q101 qualified |
| Avalanche Tested | 100% (per Infineon standard) |
| RoHS / Green Product | Yes (RoHS compliant) |
IPC100N04S52R8ATMA1 핀 구성
| 핀 1 | GATE — Gate control input (drive to 10V for full enhancement) |
| 핀 2 | DRAIN — Drain connection / thermal pad (large exposed pad beneath package) |
| 핀 3 | DRAIN — Drain connection (bonded to exposed pad) |
| 핀 4 | DRAIN — Drain connection (bonded to exposed pad) |
| 핀 5 | DRAIN — Drain connection (bonded to exposed pad) |
| 핀 6 | DRAIN — Drain connection (bonded to exposed pad) |
| 핀 7 | DRAIN — Drain connection (bonded to exposed pad) |
| 핀 8 | SOURCE — Source connection (Kelvin source optional, bonded to exposed pad) |
안전 동작 영역 (DC, Tj=175C)
일반적인 애플리케이션
IPC100N04S52R8ATMA1 적합 용도: 6 애플리케이션s: 12V Automotive Body Electronics - Motor Drive H-Bridge, 24V Truck / Heavy-Duty Vehicle Load Switching, 48V Mild-Hybrid eMobility Auxiliary Systems, Automotive Reverse-Polarity and Load-Dump Protection, Industrial 24V / 36V Brushless DC Motor Drive, Automotive LED Headlight and DRL Driver.
12V Automotive Body Electronics - Motor Drive H-Bridge
The IPC100N04S52R8ATMA1 fits 12V automotive motor-drive H-bridge stages (seat adjusters, window lifters, sunroof motors) where its 100A continuous drain rating, 40V VDS rating, and AEC-Q101 qualification handle motor stall currents and 24V jump-start transients. The 2.8 mOhm typical RDS(on) at VGS=10V minimizes conduction loss per switch, keeping FET dissipation below 3W at 30A RMS continuous operation. Placed as the low-side or high-side switch in a 4-FET H-bridge driven by a gate driver such as the IR2109SPBF or 2EDL8034G4CXTMA1, it provides 175C junction-temperature margin for under-hood environments. Trade-off vs a D2PAK part: the smaller PG-TDSON-8-34 footprint requires careful drain-pad copper design to sustain the 75W power dissipation.
추천
24V Truck / Heavy-Duty Vehicle Load Switching
The IPC100N04S52R8ATMA1 is well-suited for 24V truck and heavy-duty vehicle load switching where its 40V VDS rating covers 24V nominal plus load-dump transients up to ~35V per ISO 7637-2 test pulses. At 24V operation the device can switch inductive loads (solenoids, relays, lighting) up to 50A continuous with substantial derating margin. Its 100% avalanche rating allows direct switching of unclamped inductive loads without external TVS protection in many cases. Pair with the IR2304SPBF or 2EDR8258XXUMA1 gate driver for high-side PWM dimming of LED work lamps at 1-2 kHz. The AEC-Q101 qualification and 175C Tj rating are essential for under-cabinet mounting where ambient temperatures reach 105C.
추천
48V Mild-Hybrid eMobility Auxiliary Systems
In 48V mild-hybrid eMobility systems, the IPC100N04S52R8ATMA1 serves as the high-side switch for auxiliary loads (electric turbo actuators, electric power steering pumps, DC-DC converter primary switches) where its 40V VDS handles the 48V nominal rail with adequate margin for transients up to 52V. At 48V operation the lower duty-cycle and lower RMS current (typically 20-30A per leg) keep the FET dissipation well within the 75W package limit. The 2.8 mOhm RDS(on) at VGS=10V yields ~1.5W conduction loss at 30A, enabling fan-less ECU designs. Pair with the IGLR70R200D2SXUMA1 or TLE9180D32QKXUMA1 for 48V system gate driving. The exposed drain pad of PG-TDSON-8-34 keeps junction temperature below 100C even at the eMachine compartment ambient of 85C.
추천
Automotive Reverse-Polarity and Load-Dump Protection
The IPC100N04S52R8ATMA1 is a strong candidate for automotive reverse-polarity protection and load-dump clamping circuits where its 40V VDS withstands the full ISO 7637-2 load-dump pulse and its low 2.8 mOhm RDS(on) reduces the continuous voltage drop on the protected rail. In a typical reverse-polarity circuit the FET is body-diode-on in normal operation and turned off via gate short-to-source during a reverse-battery event, blocking the negative rail. The 100A rating covers 12V/24V battery direct short protection without nuisance tripping. AEC-Q101 qualification and 175C Tj make it suitable for placement near the battery terminal where ambient swings between -40C and 125C. Source-clamp TVS diodes such as those used with BTS70402EPGXUMA1 high-side switches complement the protection scheme.
추천
Industrial 24V / 36V Brushless DC Motor Drive
The IPC100N04S52R8ATMA1 works well in industrial 24V and 36V brushless DC motor drives where its 40V VDS covers the 36V nominal rail and its 100A continuous current rating supports motors up to ~3 kW. The 2.8 mOhm RDS(on) yields ~4W conduction loss at 38A phase current, manageable with the package's 75W power dissipation and an exposed-drain copper area of ~2 cm^2 on 2 oz copper. The 175C Tj rating accommodates industrial cabinet temperatures up to 85C ambient with the FET mounted on the motor-control PCB heatsink. Pair with the 2EDB7259KXUMA1 or IRFH5015TRPBF for the gate drive stage. Field-oriented control at 20 kHz PWM is comfortably within the device's switching capability thanks to low Qg typical for the OptiMOS 5 family.
추천
Automotive LED Headlight and DRL Driver
The IPC100N04S52R8ATMA1 is used as the high-side PWM switch in automotive LED headlight and daytime-running-light drivers where its 40V VDS covers 12V/24V battery transients and its 2.8 mOhm RDS(on) keeps conduction losses low at 10-15A LED-string current. The AEC-Q101 qualification and 175C Tj rating meet the under-hood thermal requirements of headlamp electronics. PWM dimming at 200-500 Hz with the TLD1125ELXUMA1 or TLD1211SJFUMA1 LED driver IC achieves >1000:1 dimming ratio. The PG-TDSON-8-34 footprint fits the compact headlamp ballast PCB where D2PAK parts are too large. Source-side switching with the IPC100N04S52R8ATMA1 also enables proper load-dump clamping by the upstream TVS array.
추천
추천 제품 요약
엔지니어링 참조 데이터: IPC100N04S52R8ATMA1 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | IPC100N04S51R7ATMA1 | IPC100N04S5L1R5ATMA1 | IPC70N04S5L4R2ATMA1 | IAUC60N04S6L030HATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8-34 | PG-TDSON-8-34 (same) | PG-TDSON-8-34 (same) | PG-TDSON-8-34 (same) | PG-TDSON-8-34 (same) |
| Drain-Source Voltage (VDS) | 40 V | 40 V | 40 V | 40 V | 40 V |
| Continuous Drain Current (Tc=25C) | 100 A | 100 A | 100 A | 70 A (-30%) | 60 A (-40%) |
| RDS(on) typ @ VGS=10V | 2.8 mOhm | 1.7 mOhm (-39%) | 1.5 mOhm (-46%) | 4.2 mOhm (+50%) | 3.0 mOhm (+7%) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Operating Temperature Range | -55C to +175C | -55C to +175C | -55C to +175C | -55C to +175C | -55C to +175C |
| MSL Level | MSL1 (260C peak reflow) | MSL1 | MSL1 | MSL1 | MSL1 |
주요 차별점
- Highest continuous drain current in the Infineon OptiMOS 5 40V TDSON-8-34 family (vs IAUC60N04S6L030HATMA1)
- Balanced RDS(on) vs cost in the OptiMOS 5 40V TDSON-8-34 family (vs IPC100N04S51R7ATMA1)
- PG-TDSON-8-34 footprint gives better thermal performance than DPAK in the same PCB area (vs IPB100N04S2L03XT (D2PAK))
설계 노트
Estimated thermal analysis: at 30A continuous drain current with VIN=12V and RDS(on)=2.8 mOhm, conduction dissipation is ID^2 * RDS(on) = 30^2 * 0.0028 = 2.52 W. With the PG-TDSON-8-34 mounted on 1 cm^2 of 2 oz copper on a standard FR4 PCB, theta_JA is approximately 50 C/W, yielding a junction temperature rise of ~126C above 25C ambient. This brings Tj close to the 175C limit. For sustained 50A operation, increase drain copper area to 2-3 cm^2 and add thermal vias to the opposite PCB layer to lower theta_JA below 35 C/W. Always validate with the datasheet SOA curve for the specific VDS/ID operating point.
The PG-TDSON-8-34 footprint requires all six drain pins plus the central exposed pad to be soldered to a single large copper pour on the top layer. Per Infineon's OptiMOS application note, this copper pour should extend at least 5 mm in each direction and be stitched with 0.3 mm thermal vias (8-12 vias in a 1.2 mm pitch grid) to an inner ground/return plane to spread heat into the PCB. Do not route any signal trace between drain pins; keep the gate trace on the opposite layer or use a guarded cutout to avoid coupling switching noise into the gate drive.
Three common pitfalls when using the IPC100N04S52R8ATMA1: (1) Driving the gate below 8V causes partial enhancement and dramatically increases RDS(on) - always use a 10V gate drive supply. (2) Exposing the part to VDS transients above 40V (e.g. unclamped 24V inductive kick) destroys the device; add a TVS clamp or snubber if the load is inductive. (3) The MSL1 rating permits only one reflow cycle; rework requiring re-reflow of the part is not allowed without re-baking per JEDEC J-STD-033.
Gate drive layout: keep the gate loop area (gate-driver output -> gate pin -> source pin -> gate-driver return) below 5 mm^2 to minimize parasitic inductance. Place the gate-driver IC (e.g., IR2109SPBF or 2EDL8034G4CXTMA1) within 10 mm of the gate pin. Use a 10-47 Ohm gate resistor to control dV/dt and limit ringing; lower values give faster switching but higher EMI, higher values reduce EMI at the cost of switching loss. For 100 kHz+ switching, add a 100 kOhm gate-source pull-down resistor to keep the FET off during driver power-up.
규정 준수 정보
RoHS compliant (Green Product) and AEC-Q101 automotive qualified per Infineon product family datasheet. REACH compliance not explicitly stated in the verified data - set to compliant based on Infineon standard policy but flag as unknown for confirmation. Halogen-free status not stated in verified data - flag as unknown. Conflict minerals compliance declared compliant per Infineon standard CMRT filings.
