IPD50R380CEAUMA1 vs IPD60R210PFD7SAUMA1 비교
다음의 상세 나란히 비교: IPD50R380CEAUMA1 제조: Infineon 및 IPD60R210PFD7SAUMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IPD50R380CEAUMA1 | IPD60R210PFD7SAUMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.34 | $0.54 |
| Drain-Source Voltage (V(BR)DSS) | 500 V | — |
| Continuous Drain Current (Id) at Tc=25C | 14.1 A | — |
| Continuous Drain Current (Id) at Tc=100C | [DATA_NEEDED: Id at Tc=100C] | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: Idm] | — |
| On-State Resistance (RDS(on)) max at VGS=10V | 380 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | — |
| Total Power Dissipation (Ptot) at Tc=25C | 98 W | — |
| 동작 접합 온도 | -55C to +150C | — |
| Technology | CoolMOS CE (super-junction) | Superjunction (CoolMOS) N-Channel Power MOSFET |
| Channel Type | N-Channel | — |
| 패키지 | PG-TO252-3 (DPAK) | — |
| 실장 유형 | Surface Mount | Surface Mount (SMT) |
| RoHS 상태 | Compliant | — |
| AEC-Q101 Automotive | Not qualified (CE variant; use CE-A for automotive) | — |
| MSL (Moisture Sensitivity Level) | [DATA_NEEDED: MSL level] | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | CoolMOS PFD7 |
| Drain-Source Voltage (VDS) | — | 600 V |
| Continuous Drain Current (ID, Tc) | — | 16 A |
| On-Resistance (RDS(on), max) | — | 210 mOhm |
| Power Dissipation (Ptot, Tc=25C) | — | 64 W |
| Gate Threshold Voltage (VGS(th), typ) | — | 3.5 V |
| Gate Charge (Qg, typ) | — | [DATA_NEEDED: Qg value] |
| Package Type | — | TO-252 (DPAK) |
| Manufacturer Package Designator | — | PG-TO252-3-344 |
| Pin Configuration | — | 3-Pin (2+Tab) - Gate, Drain (tab), Source |
| 동작 온도 범위 | — | -55C to +150C (TJ) |
| Lead-Free / RoHS | — | Yes (compliant) |
| Application Segment | — | Consumer-grade SMPS |