IPD50R380CEAUMA1 vs IPD60R210PFD7SAUMA1 Comparison

Detailed side-by-side comparison of IPD50R380CEAUMA1 by Infineon and IPD60R210PFD7SAUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPD50R380CEAUMA1 IPD60R210PFD7SAUMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Drain-Source Voltage (V(BR)DSS) 500 V —
Continuous Drain Current (Id) at Tc=25C 14.1 A —
Continuous Drain Current (Id) at Tc=100C [DATA_NEEDED: Id at Tc=100C] —
Pulsed Drain Current (Idm) [DATA_NEEDED: Idm] —
On-State Resistance (RDS(on)) max at VGS=10V 380 mΩ —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ] —
Total Power Dissipation (Ptot) at Tc=25C 98 W —
Operating Junction Temperature -55C to +150C —
Technology CoolMOS CE (super-junction) Superjunction (CoolMOS) N-Channel Power MOSFET
Channel Type N-Channel —
Package PG-TO252-3 (DPAK) —
Mounting Type Surface Mount Surface Mount (SMT)
RoHS Status Compliant —
AEC-Q101 Automotive Not qualified (CE variant; use CE-A for automotive) —
MSL (Moisture Sensitivity Level) [DATA_NEEDED: MSL level] —
Manufacturer — Infineon Technologies
Product Family — CoolMOS PFD7
Drain-Source Voltage (VDS) — 600 V
Continuous Drain Current (ID, Tc) — 16 A
On-Resistance (RDS(on), max) — 210 mOhm
Power Dissipation (Ptot, Tc=25C) — 64 W
Gate Threshold Voltage (VGS(th), typ) — 3.5 V
Gate Charge (Qg, typ) — [DATA_NEEDED: Qg value]
Package Type — TO-252 (DPAK)
Manufacturer Package Designator — PG-TO252-3-344
Pin Configuration — 3-Pin (2+Tab) - Gate, Drain (tab), Source
Operating Temperature Range — -55C to +150C (TJ)
Lead-Free / RoHS — Yes (compliant)
Application Segment — Consumer-grade SMPS

Datasheets & Resources

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