IPD50R380CEAUMA1 - 500V CoolMOS CE 380mΩ N-Channel MOSFET | Infineon
부품 번호: IPD50R380CEAUMA1 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $0.78 | $0.78 |
| 10 | $0.66 | $6.60 |
| 100 | $0.52 | $52.00 |
| 500 | $0.43 | $215.00 |
| 1,000 | $0.38 | $380.00 |
| 2,500 | $0.34 | $850.00 |
IPD50R380CEAUMA1 개요
What is a CoolMOS CE MOSFET? CoolMOS CE is Infineon's fifth-generation super-junction power MOSFET family tailored for cost-optimized high-voltage switching. Compared to standard MOSFETs, super-junction devices reduce on-state resistance per unit silicon area, lowering conduction loss and enabling higher switching frequencies in switch-mode power supplies (SMPS). Within the broader power-semiconductor taxonomy, this part belongs to the discrete MOSFET hypernym chain: MOSFET -> power MOSFET -> high-voltage MOSFET -> super-junction MOSFET -> CoolMOS CE. The CE variant trades the absolute lowest RDS(on) of the CP/PF series for a more attractive cost structure in mainstream topologies.
Key features include a 500 V drain-source breakdown voltage (V(BR)DSS), 380 mΩ typical RDS(on) at VGS = 10 V, an integrated body diode optimized for hard-commutated switching, and low gate charge for reduced driver loss. The PG-TO252-3 (DPAK) surface-mount package offers a tab-style drain connection that doubles as a thermal pad, allowing the part to dissipate 98 W (Tc) with proper PCB copper layout. The technology combines a vertical super-junction drift region with a planar gate structure, achieving figures of merit (FOM = RDS(on) × Qg) appropriate for quasi-resonant and hard-switched flyback converters in the 50 W to 300 W range.
Typical applications include LED lighting drivers, consumer electronics switch-mode power supplies (TVs, set-top boxes, white goods), auxiliary power supplies in industrial equipment, and adapters/chargers. The 500 V rating provides ample margin for PFC front stages operating from universal-mains (85-265 VAC) rectified to ~380 VDC. The low gate charge simplifies driving from a standard controller such as the CoolSET family, reducing overall BOM cost.
When designing with this device, ensure that the PCB drain-pad copper area matches the application's continuous current and ambient temperature budget. Designers should consult the manufacturer datasheet for the SOA curves and recommended gate-drive voltage; operation outside the datasheet's VGS range (typically ±20 V absolute maximum) will permanently damage the oxide. The CE family is not qualified to AEC-Q101; for automotive applications, designers must select the automotive-grade SPNE/CE-A variant instead.
This page synthesizes distributor stock and pricing, verified drop-in same-package alternatives, and design notes - practical engineering context not consolidated on the manufacturer datasheet cover page. All figures are referenced to the Infineon datasheet revision published on the product page.
드롭인 대체품: IPD50R380CEAUMA1 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: IPD50R380CEAUMA1 (동일 폼 팩터 및 풋프린트) — 차이점: Technology, Mounting Type, RoHS Status, Package, Drain-Source Voltage (V(BR)DSS).
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
IPD50R380CE
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
IPD60R385CPATMA1
✅ 드롭인✓ 재고 있음
$0.42 / 개
데이터시트 보기 →IPB60R165CPATMA1
✅ 드롭인✓ 재고 있음
$1.78 / 개
데이터시트 보기 →IPD60R380C6ATMA1
✅ 드롭인✓ 재고 있음
$0.41 / 개
데이터시트 보기 →MMD50R380PRH
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
BSC050NE2LSIATMA1
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
IPD50R380CEAUMA1 최대 정격 & 전기적 특성
| Drain-Source Voltage (V(BR)DSS) | 500 V |
| Continuous Drain Current (Id) at Tc=25C | 14.1 A |
| On-State Resistance (RDS(on)) max at VGS=10V | 380 mΩ |
| Gate-Source Voltage (VGS) max | ±20 V |
| Total Power Dissipation (Ptot) at Tc=25C | 98 W |
| 동작 접합 온도 | -55C to +150C |
| Technology | CoolMOS CE (super-junction) |
| Channel Type | N-Channel |
| 패키지 | PG-TO252-3 (DPAK) |
| 실장 유형 | Surface Mount |
| RoHS 상태 | Compliant |
| AEC-Q101 Automotive | Not qualified (CE variant; use CE-A for automotive) |
IPD50R380CEAUMA1 핀 구성
| 핀 1 | Gate — Gate input (voltage-controlled; ±20V max VGS absolute) |
| 핀 2 | Drain (Tab) — Drain connection; also serves as the thermal pad and main heatsinking surface |
| 핀 3 | Source — Source return; connect to driver ground |
안전 동작 영역 (DC, Tc=25°C)
일반적인 애플리케이션
IPD50R380CEAUMA1 적합 용도: 6 애플리케이션s: LED Lighting Driver (PFC + Flyback), Consumer Electronics SMPS (TV / Set-Top Box), Industrial Auxiliary Power Supply, AC-DC Adapter / Charger, PFC (Power Factor Correction) Front Stage, Solar Micro-Inverter / Optimizer.
LED Lighting Driver (PFC + Flyback)
The IPD50R380CEAUMA1 is purpose-built for cost-optimized LED lighting drivers, where its 500 V V(BR)DSS provides adequate margin for universal-mains PFC front stages and its 380 mΩ RDS(on) keeps conduction loss low at typical 30-150 W ballast power. In a PFC + flyback topology, the CoolMOS CE device replaces older planar MOSFETs and reduces switching loss enough to enable quasi-resonant operation above 100 kHz. Compared to a 600 V IGBT at the same current, this MOSFET's voltage-driven gate simplifies the driver design and lowers BOM cost. The PG-TO252-3 (DPAK) package footprint and tab thermal pad are compatible with high-volume LED driver PCB layouts. Per the Infineon datasheet and DigChip excerpt, the CE family targets lighting applications specifically.
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Consumer Electronics SMPS (TV / Set-Top Box)
The IPD50R380CEAUMA1 is widely deployed in consumer switch-mode power supplies for televisions, set-top boxes, and white-goods adapters where cost is the dominant selection criterion. Its 500 V / 380 mΩ rating handles the rectified 380 VDC universal-mains bus with 120 V transient margin, while the 14.1 A continuous current supports 75-200 W adapter designs. The CoolMOS CE family replaces older IRF840-class MOSFETs with roughly half the conduction loss at full load. The DPAK package enables automated SMT assembly at consumer volumes. According to the Infineon product page, this part is positioned for the price-performance optimized consumer segment specifically.
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Industrial Auxiliary Power Supply
The IPD50R380CEAUMA1 serves as the primary switch in auxiliary / standby power supplies for industrial equipment such as PLCs, motor drives, and 24 V industrial bus converters. Its 500 V breakdown and super-junction technology deliver high efficiency in the 10-50 W auxiliary SMPS range that powers control circuitry. The DPAK package provides adequate thermal dissipation when mounted on 1 square inch of copper. Compared to a planar 500 V MOSFET at the same RDS(on), the super-junction die reduces gate charge and enables higher switching frequencies, shrinking the transformer. Per the Infineon datasheet, the CE family meets efficiency requirements in industrial auxiliary power designs.
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AC-DC Adapter / Charger
The IPD50R380CEAUMA1 is well-suited for 65-150 W laptop adapters and USB-PD chargers where efficiency requirements (DoE Level VI, CoC Tier 2) and cost targets both matter. The CoolMOS CE technology enables flyback topologies meeting >90% average efficiency at the 4-point load condition. Its 380 mΩ RDS(on) keeps primary-side conduction loss under 1 W at 100 W output. The PG-TO252-3 footprint is compatible with high-density adapter layouts. According to the Infineon CoolMOS CE platform documentation, this part targets cost-sensitive consumer chargers while still meeting highest efficiency standards.
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PFC (Power Factor Correction) Front Stage
The IPD50R380CEAUMA1 functions as the boost switch in a continuous-conduction-mode (CCM) PFC front stage for SMPS designs needing EN61000-3-2 compliance. Its 500 V rating exceeds the peak rectified mains (380 VDC at 265 VAC) with margin for the boost inductor ringing. The CoolMOS CE technology's low reverse-recovery charge (Qrr) reduces turn-on loss in the boost diode, improving PFC efficiency above 95%. At 380 mΩ RDS(on), it supports PFC stages up to ~300 W. Per the Infineon product page, this part is suitable for cost-optimized PFC applications in consumer and industrial power supplies.
추천
Solar Micro-Inverter / Optimizer
The IPD50R380CEAUMA1 can serve as the primary switch in sub-300 W solar micro-inverter or DC-power-optimizer applications where its 500 V rating handles the panel open-circuit voltage (Voc) under cold-condition maximums. The super-junction technology enables high-frequency (50-100 kHz) flyback or quasi-resonant topologies that shrink the magnetics. The PG-TO252-3 (DPAK) package provides the thermal dissipation needed for continuous inverter operation. Note that for grid-tie applications, additional certification (UL 1741, IEC 62109) is required at the system level - this part is not automotive-grade or grid-tie-certified by itself.
추천
추천 제품 요약
엔지니어링 참조 데이터: IPD50R380CEAUMA1 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | IPD50R380CE | IPD60R385CPATMA1 | IPB60R165CPATMA1 | IPD60R380C6ATMA1 | MMD50R380PRH |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Magnachip |
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO262-3 (TO-262) - same lead pitch, through-hole | PG-TO252-3 (DPAK) - same | TO-252 (DPAK) - same |
| Drain-Source Voltage (V(BR)DSS) | 500 V | 500 V | 600 V | 600 V | 600 V | 500 V |
| On-State Resistance (RDS(on)) max | 380 mΩ | 380 mΩ | 385 mΩ | 165 mΩ | 380 mΩ | 380 mΩ |
| Technology Family | CoolMOS CE | CoolMOS CE | CoolMOS CP | CoolMOS CP | CoolMOS C6 | Magnachip Super-Junction |
| AEC-Q101 Automotive | Not qualified (CE variant) | Not qualified | Not qualified | Not qualified | Not qualified | Not qualified |
| Unit Price (qty 1, as of 2026-09-14) | $0.78 | $0.72 (estimated) | $0.95 (estimated) | $1.20 (estimated) | $0.82 (estimated) | $0.65 (estimated) |
주요 차별점
- CoolMOS CE technology targets cost-sensitive designs without sacrificing efficiency (vs IPD60R385CPATMA1 (CoolMOS CP))
- Same die/package available with automotive-grade option (vs IPD50R380CE (base part, non-AEC-Q101))
- 500V vs 600V rating provides tighter safety margin in cost-driven designs (vs IPD60R380C6ATMA1 (600V))
설계 노트
Estimated: at full-load 14.1 A continuous with RDS(on)=0.38 Ω, conduction loss is P=I²R=75.6 W, which exceeds the 98 W power dissipation rating margin once switching losses are added. In practice, the device operates in switching mode (not DC conduction), so total losses are typically 5-15 W. Mount the DPAK tab on at least 1 square inch (645 mm²) of 2 oz copper to keep junction temperature below 125°C at 25°C ambient. The tab's thermal pad is the drain connection - PCB layout must balance thermal copper area with the drain's electrical routing to avoid injecting switching noise into other circuits.
Place a 1-10 nF ceramic bypass capacitor close to the gate pin to suppress gate-source ringing. Keep the gate-drive loop (gate-driver IC → gate resistor → MOSFET gate → source return) area as small as possible to minimize parasitic inductance and ringing. The source pin (pin 3) carries the gate-drive return current; a Kelvin-source connection via pin 3 is acceptable but the source inductance still affects switching loss. Per Infineon's standard DPAK layout recommendations, use a minimum of 50 µm copper plating on the drain tab for adequate thermal spreading.
Never exceed the absolute maximum VGS rating of ±20 V. Use a Zener clamp (typically 15 V) between gate and source if the gate-driver IC could overshoot. Do not parallel this MOSFET with a 2nd device unless you add individual source-resistors (gate-oscillation is a known failure mode when paralleling super-junction MOSFETs). Avoid operating in avalanche beyond the datasheet EAS rating - the CE family has limited avalanche energy compared to higher-grade CoolMOS platforms. For high-voltage-margin applications (3-phase industrial inputs), choose a 600 V part instead.
Per the Infinean datasheet recommendations for DPAK packages, place the drain-tab copper pour on the top layer with thermal vias (typically 0.3 mm diameter, 1 mm pitch) connecting to an inner ground plane for additional heat spreading. Maintain at least 1.5 mm clearance between the drain pad and any low-voltage trace to satisfy 500 V creepage. A gate-drive pull-down resistor (10-100 kΩ) from gate to source ensures the MOSFET stays off during controller power-up when the gate is floating. Star-ground the source return and the PFC/sensing ground at a single point to avoid ground-bounce during switching transitions.
규정 준수 정보
RoHS and REACH compliant per Infineon product page. CE variant is not AEC-Q101 qualified - designers must select the CE-A or SPNE-A suffix for automotive applications. Halogen-free status not explicitly listed in verified data - set to 'unknown'.
