IPG16N10S461AATMA1 vs IPG20N06S4L14AATMA1 비교

다음의 상세 나란히 비교: IPG16N10S461AATMA1 제조: Infineon 및 IPG20N06S4L14AATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
IPG20N06S4L14AATMA1 IPG20N06S4L14AATMA1 - 60V Dual N-Ch 14mΩ MOSFET | Infineon

IPG20N06S4L14AATMA1 - 60V Dual N-Ch 14mΩ MOSFET | Infineon

IPG20N06S4L14AATMA1 ✓ 활성

사양 비교

파라미터 IPG16N10S461AATMA1 IPG20N06S4L14AATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.82 $0.82
Manufacturer Infineon Technologies Infineon Technologies
Product Type Dual N-Channel MOSFET Array —
Technology OptiMOS™ trench OptiMOS™ Trench
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) 16 A 20 A (per channel)
On-Resistance R_DS(on) typ. 61 mΩ —
Total Power Dissipation (Ptot) 29 W (T_C = 25°C) —
Configuration 2 N-Channel (Dual, separate) —
Gate Threshold Voltage V_GS(th) typ. [DATA_NEEDED: gate threshold voltage] —
Maximum Junction Temperature 175 °C —
동작 온도 범위 -55 °C to +175 °C -55°C to +175°C (junction)
패키지 PG-TDSON-8-10 (Wettable Flank) PG-TDSON-8-10 (Wettable Flank)
실장 유형 Surface Mount Surface Mount
Terminal Count 8 —
MSL 레벨 [DATA_NEEDED: MSL rating] —
RoHS 상태 Compliant —
Built-in Body Diode Yes —
Channel Mode Enhancement —
Part Number — IPG20N06S4L14AATMA1
FET Type — 2 N-Channel (Dual)
Drain-to-Source Voltage (VDS) — 60 V
Power Dissipation (PD) — 50 W
RDS(on) at VGS=10V — 13.7 mΩ typical
RDS(on) at VGS=4.5V — 14 mΩ typical
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th)]
Logic-Level Gate Drive — Yes
Automotive Qualification — AEC-Q101
Peak Reflow Temperature — 260°C
Avalanche Tested — 100% (per datasheet)
RoHS Compliance — Green Product (RoHS compliant)
AOI Compatible — Yes (Wettable Flank)

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