IPG16N10S461AATMA1 vs IPG20N06S4L14AATMA1 Comparison

Detailed side-by-side comparison of IPG16N10S461AATMA1 by Infineon and IPG20N06S4L14AATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPG20N06S4L14AATMA1 IPG20N06S4L14AATMA1 - 60V Dual N-Ch 14mΩ MOSFET | Infineon

IPG20N06S4L14AATMA1 - 60V Dual N-Ch 14mΩ MOSFET | Infineon

IPG20N06S4L14AATMA1 ✓ Active

Specification Comparison

Parameter IPG16N10S461AATMA1 IPG20N06S4L14AATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.82 $0.82
Manufacturer Infineon Technologies Infineon Technologies
Product Type Dual N-Channel MOSFET Array
Technology OptiMOS™ trench OptiMOS™ Trench
Drain-Source Voltage (VDS) 100 V
Continuous Drain Current (ID) 16 A 20 A (per channel)
On-Resistance R_DS(on) typ. 61 mΩ
Total Power Dissipation (Ptot) 29 W (T_C = 25°C)
Configuration 2 N-Channel (Dual, separate)
Gate Threshold Voltage V_GS(th) typ. [DATA_NEEDED: gate threshold voltage]
Maximum Junction Temperature 175 °C
Operating Temperature Range -55 °C to +175 °C -55°C to +175°C (junction)
Package PG-TDSON-8-10 (Wettable Flank) PG-TDSON-8-10 (Wettable Flank)
Mounting Type Surface Mount Surface Mount
Terminal Count 8
MSL Level [DATA_NEEDED: MSL rating]
RoHS Status Compliant
Built-in Body Diode Yes
Channel Mode Enhancement
Part Number IPG20N06S4L14AATMA1
FET Type 2 N-Channel (Dual)
Drain-to-Source Voltage (VDS) 60 V
Power Dissipation (PD) 50 W
RDS(on) at VGS=10V 13.7 mΩ typical
RDS(on) at VGS=4.5V 14 mΩ typical
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th)]
Logic-Level Gate Drive Yes
Automotive Qualification AEC-Q101
Peak Reflow Temperature 260°C
Avalanche Tested 100% (per datasheet)
RoHS Compliance Green Product (RoHS compliant)
AOI Compatible Yes (Wettable Flank)

Datasheets & Resources

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