IPN60R2K0PFD7SATMA1 vs IPN70R1K4P7SATMA1 비교
다음의 상세 나란히 비교: IPN60R2K0PFD7SATMA1 제조: Infineon 및 IPN70R1K4P7SATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IPN60R2K0PFD7SATMA1 | IPN70R1K4P7SATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.28 | $0.48 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | CoolMOS PFD7 | CoolMOS P7 |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (V(BR)DSS) | 600 V | 700 V |
| Continuous Drain Current (Tc) | 3 A | — |
| Power Dissipation (Tc) | 6 W | — |
| RDS(on) typical @ VGS=10V | 2.0 Ohm | — |
| RDS(on) max @ VGS=10V | 1.626 Ohm (per Infineon product page) | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | 3.8 nC @ 10 V (per UTMel listing) | [DATA_NEEDED: VGS(th) typical/min/max] |
| Input Capacitance (Ciss) | 134 pF @ 400 V (per UTMel listing) | — |
| Technology | CoolMOS superjunction | Superjunction (CoolMOS P7) |
| 패키지 | PG-SOT223-3-1 (SOT-223) | PG-SOT223 (3-pin + tab, surface mount) |
| 실장 유형 | Surface Mount | Surface Mount |
| 동작 온도 범위 | [DATA_NEEDED: operating temperature range] | -55C to +150C (TJ) |
| MSL 레벨 | [DATA_NEEDED: MSL level] | 1 (per JEDEC J-STD-020) |
| RoHS 상태 | Compliant (per Newark listing) | Compliant |
| 트랜지스터 유형 | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at TC | — | 4 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Static Drain-Source On-Resistance (RDS(on)) | — | 1.4 ohm class (per '1K4' suffix) |
| Total Power Dissipation (PD) at TC | — | 6.2 W |
| Configuration | — | Single with built-in diode |
| 핀 수 | — | 3 (Gate, Drain, Source) |
| DPAK Footprint Compatible | — | Yes (drop-in alternative to DPAK per datasheet) |