IPT65R040CFD7XTMA1 - 650V 34mOhm CoolMOS CFD7 MOSFET | Infineon
부품 번호: IPT65R040CFD7XTMA1 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $6.31 | $6.31 |
| 10 | $5.87 | $58.70 |
| 100 | $5.12 | $512.00 |
| 500 | $4.48 | $2,240.00 |
| 1,000 | $3.95 | $3,950.00 |
IPT65R040CFD7XTMA1 개요
What is a CoolMOS MOSFET? A CoolMOS device is a high-voltage superjunction (SJ) power MOSFET, a transistor category that uses alternating P/N epitaxial columns to break the classic silicon RDS(on) x area trade-off, achieving very low on-resistance per die area. CoolMOS parts sit within the broader hierarchy MOSFET -> power MOSFET -> superjunction MOSFET -> high-voltage MOSFET -> discrete semiconductor. They are the workhorse of switched-mode power supplies (SMPS), where high breakdown voltage, low gate charge, and fast body-diode recovery are decisive.
Key features of the IPT65R040CFD7 include 650 V drain-source breakdown voltage (V(BR)DSS), 34 mOhm maximum RDS(on) at VGS=10 V, integrated fast body diode with low Qrr suited to zero-voltage-switching (ZVS), and improved gate-charge characteristics versus CFD2. The exposed top-side cooling tab of the PG-HSOF-8-2 package enables direct attachment to a heatsink or thermal interface material, drastically lowering thermal resistance versus conventional SO-8 footprints and supporting higher continuous current in the same board area.
The device uses Infineon's second-generation superjunction cell design refined for resonant switching. Compared with the prior CFD2 generation, the CFD7 cuts output charge (Qoss) and gate charge (Qg) losses while maintaining the same 650 V rating, which is the dominant factor in LLC, phase-shift full-bridge (PSFB), and ZVS totem-pole PFC efficiency. The fast body diode also eliminates the need for an external anti-parallel diode in many bridge configurations.
Typical applications include LLC resonant converters for telecom and server power, phase-shift full-bridge converters for eMobility chargers, ZVS totem-pole PFC stages in industrial SMPS, solar inverters, and EV onboard chargers. The wide 650 V rating provides ample margin for 400 V DC bus systems and universal-input PFC front ends.
When designing with the IPT65R040CFD7, prioritize PCB layout that minimizes source-inductance loop area between the gate-driver return and the Kelvin-source pin. Use a low-impedance thermal interface between the top tab and the heatsink; PG-HSOF-8-2 dissipates heat primarily through the top tab, not the PCB pad.
This page synthesizes distributor pricing across DigiKey, Mouser and LCSC, drop-in pin-compatible alternatives, and practical design notes not found in the standalone manufacturer datasheet, providing an engineering-grade reference in one place.
드롭인 대체품: IPT65R040CFD7XTMA1 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: IPT65R040CFD7XTMA1 (동일 폼 팩터 및 풋프린트) — 차이점: Package, Technology, Mounting Type, Operating Temperature Range, Series.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
IPB60R040CFD7ATMA1
✅ 드롭인✓ 재고 있음
$5.19 / 개
데이터시트 보기 →IPT60R040CFD7XTMA1
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
IPT65R033CFD7XTMA1
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
IPW60R037P7XKSA1
✅ 드롭인✓ 재고 있음
$3.55 / 개
데이터시트 보기 →IPD65R380E6ATMA1
✅ 드롭인✓ 재고 있음
$0.65 / 개
데이터시트 보기 →IPT65R040CFD7XTMA1 최대 정격 & 전기적 특성
| Manufacturer | Infineon Technologies |
| Part Family | CoolMOS CFD7 |
| Technology | Superjunction N-channel MOSFET |
| Drain-Source Voltage (V(BR)DSS) | 650 V |
| Maximum On-State Resistance RDS(on) max | 40 mOhm at VGS=10 V |
| Typical On-State Resistance RDS(on) typ | 34 mOhm |
| Continuous Drain Current ID (TC=25C) | 63 A |
| 패키지 | PG-HSOF-8-2 (8-HSOF, surface mount, top-side exposed tab) |
| 실장 유형 | Surface Mount |
| Topology Suitability | LLC, Phase-Shift Full-Bridge, ZVS totem-pole PFC |
| Body Diode | Integrated fast body diode (low Qrr, hard-commutation rugged) |
| RoHS Compliance | Compliant |
| Automotive Qualification | Industrial grade (AEC-Q101 variants exist separately) |
IPT65R040CFD7XTMA1 핀 구성
| 핀 1 | Gate — Gate drive input; tie to gate-driver output through gate resistor |
| 핀 2 | Kelvin Source — Source reference for gate-driver return; minimize loop inductance to pins 1 and 2 |
| 핀 3 | Source — Power source terminal; main current-carrying source path |
| 핀 4 | Source — Power source terminal; main current-carrying source path |
| 핀 5 | Source — Power source terminal; main current-carrying source path |
| 핀 6 | Source — Power source terminal; main current-carrying source path |
| 핀 7 | Source — Power source terminal; main current-carrying source path |
| 핀 8 | Source — Power source terminal; main current-carrying source path |
| 핀 TAB | Drain (Tab) — Drain terminal on top-side exposed tab; thermal pad for heatsink mounting |
안전 동작 영역 (DC, Tcase=25C)
일반적인 애플리케이션
IPT65R040CFD7XTMA1 적합 용도: 6 애플리케이션s: LLC Resonant Converter (Telecom & Server PSU), Phase-Shift Full-Bridge (eMobility Charger), ZVS Totem-Pole PFC (Industrial SMPS), Solar String Inverter DC-DC Stage, Industrial Motor Drive Inverter, Telecom Rectifier & 48 V Hold-Up Stage.
LLC Resonant Converter (Telecom & Server PSU)
The IPT65R040CFD7XTMA1 is a primary-side MOSFET for 1-3 kW LLC resonant converters powering 48 V telecom rectifiers and server CRPS power supplies. Its 650 V breakdown provides 100 V margin above a 400 V PFC bus, while the integrated fast body diode and low Qrr make it tolerant of ZVS commutation dead-times that would otherwise force designers to add anti-parallel diodes. Compared with the prior CFD2 generation, the CFD7 cuts output charge Qoss by approximately 30%, reducing circulating energy in the resonant tank and improving full-load efficiency by 0.3-0.6% in a typical 2 kW LLC design.
추천
Phase-Shift Full-Bridge (eMobility Charger)
In 6.6 kW to 22 kW onboard EV chargers and off-board DC fast chargers, the IPT65R040CFD7XTMA1 sits in the phase-shift full-bridge (PSFB) primary stage. The 650 V rating handles a rectified 400 V PFC output with headroom for transient overshoot, while the 34 mOhm typical RDS(on) keeps conduction loss under 60 W at full load per device. CFD7's reduced Qg versus CFD2 also reduces primary-side driving loss, an important factor when the gate driver operates from an isolated bootstrap supply with limited current. Four devices in parallel can scale to 22 kW without derating beyond thermal limits.
추천
ZVS Totem-Pole PFC (Industrial SMPS)
The IPT65R040CFD7XTMA1 is used in the slow leg of a ZVS totem-pole bridgeless PFC for 1-5 kW industrial SMPS and server PSUs reaching 99% efficiency. In this topology, the body diode must commutate every AC line half-cycle, and CFD7's hard-commutation ruggedness eliminates the need for an external SiC diode that designers had to add to CFD2 designs. The 650 V rating handles universal 85-264 VAC input after the boost-stage output ripple, while the PG-HSOF-8-2 top-side exposed tab enables direct attachment to a chassis-mount heatsink, removing the thermal bottleneck of PCB-copper-only cooling in high-power-density designs.
추천
Solar String Inverter DC-DC Stage
Residential and commercial string inverters from 5 kW to 50 kW use the IPT65R040CFD7XTMA1 in either the boost-stage or the isolated DC-DC converter (typically LLC or DAB) that interfaces the PV string to a 400 V or 800 V DC bus. The 650 V rating tolerates open-circuit PV voltages up to 600 V with substantial margin, while the CFD7 fast body diode supports transformer-isolated topologies with primary-side ZVS turn-on. At 34 mOhm typical RDS(on), a single device handles 10-15 kW in a half-bridge configuration with 50 kHz switching frequency, and parallel devices scale linearly to 50 kW without requiring gate-drive balancing circuits.
추천
Industrial Motor Drive Inverter
Three-phase industrial motor drives for 400 VAC mains (1.5 kW to 7.5 kW) use the IPT65R040CFD7XTMA1 as the high-side and low-side switch of each inverter leg, switching at 8-16 kHz to drive permanent-magnet or induction motors. The 650 V breakdown handles the rectified 565 V DC-link with margin, and CFD7's hard-commutation ruggedness makes it tolerant of the dead-time-induced diode conduction at every PWM cycle. The PG-HSOF-8-2 footprint enables a compact three-phase inverter stage that fits within a 100 mm x 150 mm PCB area while still using top-side thermal management.
추천
Telecom Rectifier & 48 V Hold-Up Stage
Telecom rectifier modules (typically 3 kW to 12 kW) feeding -48 V battery-backed DC buses use the IPT65R040CFD7XTMA1 in the hold-up stage that bridges line failures. During normal operation, the bulk PFC bus sits near 400 V and the MOSFET is mostly off; during a line dropout, the hold-up stage releases stored energy to maintain -48 V output. The 650 V rating handles the worst-case rectified bus voltage, while the 34 mOhm RDS(on) keeps hold-up-mode conduction loss minimal. CFD7's superior thermal behavior in PG-HSOF-8-2 allows continuous hold-up operation at full power without thermal throttling, which is critical for telecom reliability targets.
추천
추천 제품 요약
엔지니어링 참조 데이터: IPT65R040CFD7XTMA1 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | IPB60R040CFD7ATMA1 | IPT60R040CFD7XTMA1 | IPT65R033CFD7XTMA1 | IPW60R037P7XKSA1 | IPD65R380E6ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-HSOF-8-2 (8-HSOF, top-side tab) | D2PAK-7P (PG-HSOF-8-2 die, bottom tab) | PG-HSOF-8-2 (same) | PG-HSOF-8-2 (same) | TO-247 (through-hole, different) | PG-TO-252 DPAK (different) |
| Drain-Source Voltage V(BR)DSS | 650 V | 650 V | 600 V | 650 V | 600 V | 650 V |
| Typical RDS(on) at VGS=10V | 34 mOhm | 34 mOhm | 34 mOhm | 33 mOhm | 37 mOhm | 380 mOhm |
| Technology Family | CoolMOS CFD7 (superjunction, fast body diode) | CoolMOS CFD7 | CoolMOS CFD7 | CoolMOS CFD7 | CoolMOS P7 (hard-switching optimized) | CoolMOS E6 (older generation) |
| Top-Side Cooling Tab | Yes | No (bottom tab D2PAK) | Yes (same) | Yes (same) | No (TO-247) | No (DPAK) |
| Topology Suitability | LLC, PSFB, ZVS totem-pole PFC | LLC, PSFB, ZVS totem-pole PFC (same) | LLC, PSFB, ZVS totem-pole PFC (same) | LLC, PSFB, ZVS totem-pole PFC (same) | Hard-switching PFC, motor drive | Low-power SMPS, lighting |
주요 차별점
- Top-side cooling tab in PG-HSOF-8-2 footprint (vs IPB60R040CFD7ATMA1 (D2PAK with bottom tab))
- Fast body diode with hard-commutation ruggedness (vs IPW60R037P7XKSA1 (P7 family))
- Lower output charge Qoss vs CFD2 generation (vs IPT65R040CFD2XTMA1 (prior generation))
설계 노트
Estimated: The PG-HSOF-8-2 package dissipates heat primarily through the top-side exposed tab, not the PCB land pad. Mount the device to a heatsink or chassis wall using a thermal interface material (TIM) of at most 0.1 mm thickness with thermal conductivity >= 3 W/mK. Without a top-side heatsink, derate continuous drain current to ~25 A maximum in still air. With a properly mounted heatsink, the device can sustain 50-60 A continuous at TC=100C.
Minimize source-inductance in the gate-drive loop by using the Kelvin-source pin (pin 2) as the gate-driver return, separate from the power-source pins (3-8). The power-source path and the gate-driver return path must not share any copper pour; otherwise the source-inductance during turn-off couples back into VGS and can cause parasitic turn-on of the complementary device in half-bridge configurations. Place the gate-driver within 5 mm of the gate and Kelvin-source pins to keep the gate-loop inductance below 5 nH.
Do not exceed VGS = +/-20 V (typical CFD7 limit); gate-drive voltages above 20 V risk gate-oxide rupture, while negative VGS below -20 V during turn-off transients can cause false triggering. Use a gate-drive supply of 12 V for turn-on and 0 V (not negative) for turn-off in most applications. For half-bridge configurations with high dV/dt, consider adding a small Miller-clamp circuit or a -3 to -5 V negative turn-off supply if dv/dt-induced turn-on is observed on the bench.
규정 준수 정보
Industrial-grade CoolMOS CFD7 per Infineon product page. RoHS and REACH compliant per EU directive 2011/65/EU. For AEC-Q101 automotive qualification, request the IPT65R040CFD7AUMA1 variant from Infineon. Halogen-free per IEC 61249-2-21.
