IR2181SPBF vs IR2181STRPBF 비교

다음의 상세 나란히 비교: IR2181SPBF 제조: Infineon 및 IR2181STRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IR2181SPBF IR2181STRPBF
브랜드 Infineon Infineon
카테고리 Power MOSFET Drivers Power MOSFET Drivers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.72 $0.74
Driver Configuration Half-Bridge (High Side + Low Side) —
출력 수 2 (independent high-side and low-side) —
High-Side Offset Voltage Up to +600 V —
Gate Drive Supply (VCC, VB-VS) 10 V to 20 V —
Logic Supply (VDD/VSS) 3.3 V to 20 V (logic-level compatible) —
Source/Sink Drive Current 1.9 A source / 2.3 A sink (typical) —
Logic Input Compatibility 3.3 V, 5 V, and 15 V logic 3.3 V and 5 V
Propagation Delay (typ.) 140 ns (typical) —
UVLO Yes (both channels) —
dV/dt Immunity Yes (latch-immune CMOS) Yes
Negative Transient on VS Tolerant —
동작 온도 -40C to +125C —
패키지 8-pin SOIC (SO-8) 8-SOIC (0.154", 3.90 mm width)
실장 유형 Surface Mount Surface Mount
MSL 레벨 1 (unlimited) [DATA_NEEDED: MSL level]
RoHS 상태 Compliant Compliant (PBF suffix)
Configuration — High and Low Side, Independent
Input Type — Non-Inverting
Supply Voltage (VCC) — 10 V to 20 V
Output Current (Source) — 1.9 A peak
Output Current (Sink) — 2.3 A peak
High-Side Floating Supply Voltage (VBS) — Up to 600 V offset
Propagation Delay (typ) — 180 ns
Rise Time (typ) — [DATA_NEEDED: rise time]
Fall Time (typ) — [DATA_NEEDED: fall time]
Negative Transient Voltage Tolerance — Yes
Undervoltage Lockout — Independent for high-side and low-side
동작 온도 범위 — -40 C to +125 C
Lead-Free — Yes

데이터시트 & 자료

모든 제품 보기 BOM 생성 견적 요청