IRF5305STRRPBF vs IRF5305STRLPBF 비교
다음의 상세 나란히 비교: IRF5305STRRPBF 제조: Infineon 및 IRF5305STRLPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRF5305STRRPBF | IRF5305STRLPBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.62 | $0.92 |
| 트랜지스터 유형 | P-Channel MOSFET | — |
| Technology | HEXFET (Advanced Process) | HEXFET (fifth generation), IR MOSFET |
| Drain-to-Source Voltage (VDS) | -55 V | — |
| Continuous Drain Current (ID) at TC | -31 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-to-Source Voltage (VGS) max | ±20 V | — |
| RDS(on) max @ VGS=-10V | 60 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min] | — |
| Power Dissipation (TC) | 110 W | — |
| Power Dissipation (TA) | 3.8 W | — |
| 동작 접합 온도 | -55C to +175C | — |
| 패키지 | D2PAK (TO-263) Surface Mount | TO-263 / D2PAK (surface mount) |
| 실장 유형 | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Yes (Pb-free suffix) | Yes (Pb-free suffix PBF) |
| Packaging | Tape & Reel (TR) | Tape & Reel (TR), 800 pcs per reel |
| Polarity | P-Channel | — |
| Polarity / Channel Type | — | P-Channel |
| Drain-Source Voltage (VDS) | — | -55 V |
| Continuous Drain Current (ID) at TC=25C | — | -31 A |
| Continuous Drain Current (ID) at TA=25C | — | [DATA_NEEDED: ID at TA=25C] |
| RDS(on) max at VGS=-10V | — | 60 mOhm |
| RDS(on) max at VGS=-4.5V | — | [DATA_NEEDED: RDS(on) at VGS=-4.5V] |
| Gate Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: VGS(th) typ] |
| Total Gate Charge (Qg) | — | 42 nC (Mouser listing) / 63 nC (Future Electronics listing) |
| Maximum Power Dissition at Tc | — | 110 W |
| Maximum Power Dissipation at TA | — | 3.8 W |
| 동작 온도 범위 | — | [DATA_NEEDED: Tj max / operating range] |