IRFR2405TRPBF vs IRFR220NPBF 비교
다음의 상세 나란히 비교: IRFR2405TRPBF 제조: Infineon 및 IRFR220NPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRFR2405TRPBF | IRFR220NPBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.61 | $0.74 |
| Manufacturer | Infineon Technologies | — |
| Part Status | Active | — |
| FET Type | N-Channel | N-Channel MOSFET, Metal Oxide |
| Technology | HEXFET (IR MOSFET) | HEXFET (Planar) |
| Drain-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at Tc=25C | 56 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | [DATA_NEEDED: gate threshold voltage] |
| On-Resistance RDS(on) max at VGS=10V | 16 mOhm | — |
| On-Resistance RDS(on) max at VGS=5V | [DATA_NEEDED: RDS(on) at 5V] | — |
| Total Gate Charge (Qg) | 70 nC | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) at Tc=25C | 110 W | — |
| 동작 접합 온도 | -55C to +175C | — |
| 패키지 | TO-252AA (DPAK) | — |
| 실장 유형 | Surface Mount | Surface Mount |
| 핀 수 | 3 (Gate, Drain, Source) + Tab | 3 (Gate, Drain, Source) plus tab |
| MSL 레벨 | 1 | 1 (per JEDEC J-STD-020) |
| RoHS 상태 | Compliant (Lead-Free PBF suffix) | — |
| 할로겐 프리 | [DATA_NEEDED: halogen-free status] | — |
| Avalanche Rated | Yes (100% avalanche tested) | — |
| Drain-to-Source Voltage (VDS) | — | 200 V |
| Continuous Drain Current (ID) at TC=25C | — | 5 A |
| Power Dissipation (PD) at TC=25C | — | 43 W |
| Static Drain-Source On-Resistance (RDS(on)) max | — | 0.6 ohm at VGS = 10 V |
| 패키지 / 케이스 | — | TO-252AA (DPAK) |
| 동작 온도 범위 | — | -55C to +150C (junction) |
| Lead-Free / RoHS | — | Yes, lead-free (PBF suffix) |
| Avalanche Energy Rated | — | Yes (per datasheet characterization) |