IRFR9024NTRPBF vs IRF7342TRPBF 비교
다음의 상세 나란히 비교: IRFR9024NTRPBF 제조: Infineon 및 IRF7342TRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRFR9024NTRPBF | IRF7342TRPBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.17 | $0.48 |
| Polarity | P-Channel | — |
| VDS (Drain-Source Voltage) | -55 V | — |
| Continuous Drain Current (Tc=25C) | -11 A | — |
| 펄스 드레인 전류 | [DATA_NEEDED: pulsed drain current] | — |
| VGS (Gate-Source Voltage) | ±20 V | — |
| VGS(th) (Threshold Voltage) | [DATA_NEEDED: VGS(th) typical] | — |
| RDS(on) Max at VGS=-10V | 175 mOhm | — |
| Total Gate Charge (Qg) | 12.7 nC | — |
| Maximum Power Dissipation (Tc=25C) | 38 W | — |
| 동작 접합 온도 | -55C to +175C | — |
| 패키지 | TO-252AA (DPAK) | 8-SOIC (SO-8), surface mount |
| 실장 유형 | Surface Mount | Surface Mount |
| 핀 수 | 3 | — |
| Technology | HEXFET (Gen 5) | HEXFET Power MOSFET (Fifth Generation), P-Channel |
| RoHS 상태 | Compliant | — |
| Part Number | — | IRF7342TRPBF |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Configuration | — | Dual P-Channel MOSFET Array (two independent P-FETs in one package) |
| Drain-Source Voltage (Vds) | — | -55 V |
| Continuous Drain Current (Id) | — | -3.4 A at 25 C |
| Pulsed Drain Current (Idm) | — | [DATA_NEEDED: pulsed drain current] |
| Gate Threshold Voltage (Vgs(th)) | — | -1.0 V to -3.0 V (typ -1.7 V) |
| Drain-Source On-Resistance (RDS(on)) | — | 0.105 ohm max at VGS = -10 V |
| Maximum Power Dissumption (Pd) | — | 2 W |
| 동작 온도 범위 | — | -55 C to +150 C (Tj) |
| Packaging | — | Tape and Reel (TR) |
| Lead-Free / RoHS | — | Yes (PBF suffix indicates lead-free, RoHS compliant) |
| Channel Type | — | P-Channel (enhancement mode) |
| Number of Channels | — | 2 (dual array) |