IRFZ24NPBF vs IRFZ48NSTRLPBF 비교
다음의 상세 나란히 비교: IRFZ24NPBF 제조: Infineon 및 IRFZ48NSTRLPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRFZ24NPBF | IRFZ48NSTRLPBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.46 | $1.18 |
| FET Type | N-Channel | N-Channel Power MOSFET |
| Drain-to-Source Voltage (VDS) | 55 V | 55 V |
| Continuous Drain Current (ID) at TC=25C | 17 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) | ± 20 V | — |
| RDS(on) at VGS=10V | 70 mOhm (max) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Total Gate Charge (Qg) | 13.3 nC | 54 nC |
| Power Dissipation (PD) at TC=25C | 45 W | — |
| 동작 접합 온도 | -55C to +175C | -55C to +175C |
| 패키지 | TO-220AB (through hole) | D2PAK (TO-263) Surface Mount |
| 실장 유형 | Through Hole | Surface Mount |
| Technology | HEXFET planar cell | — |
| Switching Frequency Range | Optimized for < 100 kHz | — |
| RoHS 상태 | Compliant | Compliant |
| Lead-Free | Yes (PBF suffix) | — |
| Qualification | JEDEC standard | — |
| Channel Mode | Enhancement | — |
| Continuous Drain Current (ID) @ Tc=25C | — | 64 A |
| Static Drain-to-Source On-Resistance (Rds(on)) | — | 14 mΩ at VGS = 10 V |
| Gate-to-Source Threshold Voltage (VGS(th)) | — | 2.0 V to 4.0 V |
| Gate-to-Source Voltage (VGS) max | — | ±20 V |
| Power Dissipation (Pd) @ Tc=25C | — | 130 W |
| Power Dissipation (Pd) @ Ta=25C on FR-4 | — | 3.8 W |
| Packaging | — | Tape & Reel (13-inch reel, TRL) |
| Lead Finish | — | Lead-free (PBF) matte tin |
| Technology Family | — | HEXFET advanced process technology |