IRFZ48NSTRLPBF vs IRFZ34NPBF 비교

다음의 상세 나란히 비교: IRFZ48NSTRLPBF 제조: Infineon 및 IRFZ34NPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IRFZ48NSTRLPBF IRFZ34NPBF
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $1.18 $0.61
FET Type N-Channel Power MOSFET N-Channel, Enhancement Mode
Drain-to-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) @ Tc=25C 64 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Static Drain-to-Source On-Resistance (Rds(on)) 14 mΩ at VGS = 10 V —
Gate-to-Source Threshold Voltage (VGS(th)) 2.0 V to 4.0 V —
Total Gate Charge (Qg) 54 nC —
Gate-to-Source Voltage (VGS) max ±20 V —
Power Dissipation (Pd) @ Tc=25C 130 W —
Power Dissipation (Pd) @ Ta=25C on FR-4 3.8 W —
동작 접합 온도 -55C to +175C —
패키지 D2PAK (TO-263) Surface Mount TO-220AB (3-pin + tab, through-hole)
실장 유형 Surface Mount Through Hole
Packaging Tape & Reel (13-inch reel, TRL) —
Lead Finish Lead-free (PBF) matte tin —
RoHS 상태 Compliant Compliant
Technology Family HEXFET advanced process technology —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Status — Active
Technology — HEXFET (Planar DMOS, 5th generation)
Drain-Source Voltage (V_DSS) — 55 V
Continuous Drain Current (I_D) at Tc=25C — 29 A
Pulsed Drain Current (I_DM) — [DATA_NEEDED: pulsed drain current]
Power Dissipation (P_D) at Tc=25C — 68 W
On-Resistance R_DS(on) max at V_GS=10V — 40 mOhm
Gate Charge (Q_g) typ — 22.7 nC
Gate Threshold Voltage V_GS(th) typ — [DATA_NEEDED: gate threshold voltage]
Input Capacitance (C_iss) typ — [DATA_NEEDED: input capacitance]
동작 온도 범위 — -55 C to +175 C
Maximum Junction Temperature — 175 C
Lead-Free Status — Yes (Pb-free, RoHS compliant)
Qualification — JEDEC standard
Configuration — Single N-Channel, 3-pin (3+tab)

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