AUIRF7640S2TR - 60V 21A DirectFET MOSFET for Class D | Infineon
부품 번호: AUIRF7640S2TR ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.66 | $16.60 |
| 100 | $1.48 | $148.00 |
| 500 | $1.32 | $660.00 |
| 1,000 | $1.18 | $1,180.00 |
AUIRF7640S2TR 개요
A DirectFET MOSFET is a chip-scale surface-mount power package in which the silicon die is mounted on a metallic can that forms both the drain contact and a low-resistance thermal path to the PCB. Unlike a standard SO-8 or DPAK, DirectFET places the source and gate on the top side and the drain on the bottom, providing an extremely low package resistance and superior thermal performance for the same footprint. The DirectFET SB case variant is widely used in audio amplifier output stages where both low RDS(on) and clean thermal management are required.
Key features include a logic-level compatible gate drive, low total gate charge (Qg = 7.3 nC typical) that minimizes driver losses, and an automotive-grade qualification flow targeting AEC-Q101 reliability. The part is rated for avalanche operation and is intended for high-frequency PWM switching in the 250 kHz to 500 kHz range typical of Class D amplifiers. The DirectFET SB land pattern is electrically and thermally compatible with industry-standard layouts, simplifying PCB design and enabling vapor-phase, infrared, or conventional reflow soldering.
Typical applications include automotive Class D audio amplifiers (4 Ω and 8 Ω loads), high-current DC-DC synchronous rectifiers, motor drive half-bridges, and OR-ing FETs in redundant power systems. The combination of 60 V rating and 21 A continuous drain current makes it suitable for 12 V and 24 V automotive bus rails where load-dump transients must be tolerated.
When designing with this part, ensure that the PCB copper area under the DirectFET can is sized to keep junction temperature below 150 °C at worst-case load. The gate drive should swing at least 10 V for full RDS(on) optimization, although the part will turn on at 4.5 V. Always consult the manufacturer datasheet for SOA curves and thermal derating under pulsed audio loads.
드롭인 대체품: AUIRF7640S2TR — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: AUIRF7640S2TR (동일 폼 팩터 및 풋프린트) — 차이점: Package, Technology, Drain-Source Voltage (VDS), Automotive Qualification, Configuration.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
AUIRF7640S2TR1
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
AUIRF7640S2
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
AUIRF7769L2TR
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$4.78 / 개
데이터시트 보기 →IRF6645TRPBF
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
IRF7240TRPBF
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
AUIRF7640S2TR 최대 정격 & 전기적 특성
| FET Type | N-Channel |
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) @ TA=25C | 5.8 A |
| Continuous Drain Current (ID) @ TC=25C | 21 A |
| Power Dissipation (PD) @ TA=25C | 2.4 W |
| Power Dissipation (PD) @ TC=25C | 30 W |
| On-Resistance RDS(on) | 36 mΩ |
| Total Gate Charge (Qg) | 7.3 nC |
| 패키지 | DirectFET SB (Surface Mount) |
| 실장 유형 | Surface Mount |
| Technology | HEXFET Power MOSFET (Automotive Grade) |
| Automotive Qualification | AEC-Q101 (Automotive Grade per datasheet) |
| Primary Application | Automotive Class D audio amplifier output stage |
AUIRF7640S2TR directfet sb (surface mount) 핀 구성 가이드
AUIRF7640S2TR(directfet sb (surface mount) 패키지)의 핀 구성입니다. 이 전력 소자는 게이트, 드레인, 소스 단자를 갖추고 있습니다. 비편향 패키지의 경우 정확한 핀 1 방향과 풋프린트 세부 정보는 제조사 데이터시트를 참조하십시오. 일반적인 응용 분야로는 전원 공급 장치 설계, 모터 구동, 부하 스위칭이 있습니다.
다음에 대한 상세 핀아웃 데이터 없음: AUIRF7640S2TR.
다음을 참조하십시오: 데이터시트 전체 핀 구성은 다음을 참조하십시오.
안전 동작 영역 - DC
일반적인 애플리케이션
AUIRF7640S2TR 적합 용도: 6 애플리케이션s: Automotive Class D Audio Amplifier Output Stage, Automotive 12V/24V Synchronous Buck Converter, Automotive DC Motor Drive Half-Bridge, Automotive OR-ing / Power Muxing FET, Industrial High-Frequency Switching Power Supply, Automotive LED Driver Output Stage.
Automotive Class D Audio Amplifier Output Stage
The AUIRF7640S2TR is specifically designed for automotive Class D audio amplifier output stages switching at 250 kHz to 500 kHz PWM frequencies into 4 Ω and 8 Ω speaker loads. Per the Infineon datasheet, its 36 mΩ RDS(on) at VGS = 10 V minimizes conduction loss, while the 7.3 nC total gate charge keeps driver switching losses low. The DirectFET SB package's low package resistance and excellent thermal path to PCB copper enable continuous 21 A output current at 25 °C case temperature without external heatsinking. AEC-Q101 automotive qualification ensures the part survives underhood thermal cycling and load-dump transients typical of 12 V automotive electrical systems.
추천
Automotive 12V/24V Synchronous Buck Converter
The AUIRF7640S2TR functions as a low-side synchronous rectifier in 12 V and 24 V automotive DC-DC converters, where its 36 mΩ RDS(on) and 60 V VDS rating provide headroom for transient events. According to the Infineon datasheet, the part's DirectFET SB package occupies less board area than DPAK while offering superior thermal coupling. The 7.3 nC Qg simplifies gate-drive design in 200 kHz to 500 kHz buck topologies commonly used for automotive infotainment and ADAS power rails.
추천
Automotive DC Motor Drive Half-Bridge
The AUIRF7640S2TR is well-suited as a high-side or low-side switch in automotive brushed DC motor half-bridges for pumps, fans, and small actuators. The Infineon datasheet specifies 21 A continuous ID at TC and avalanche ruggedness, enabling direct drive of inductive loads without additional protection. The DirectFET SB package handles the high di/dt and dv/dt of PWM motor control at 20 kHz to 50 kHz without ringing issues common to wire-leaded packages.
추천
Automotive OR-ing / Power Muxing FET
The AUIRF7640S2TR serves as an OR-ing FET in redundant automotive power systems such as dual-battery setups and eCall backup supplies. According to the Infineon datasheet, the low 36 mΩ RDS(on) minimizes voltage drop and power dissipation in continuous-carry applications, while the 60 V VDS rating tolerates jump-start and load-dump transients. The DirectFET SB package's low thermal impedance keeps junction temperature low without external heatsinking.
추천
Industrial High-Frequency Switching Power Supply
The AUIRF7640S2TR is used in industrial switch-mode power supplies where 60 V VDS, 21 A continuous ID, and DirectFET SB thermal performance are required. Per the Infineon datasheet, the part supports hard-switched topologies up to 500 kHz and resonant topologies beyond 1 MHz, taking advantage of low Qrr and low Qg. Automotive-grade reliability provides extended MTBF in 24/7 industrial installations.
추천
Automotive LED Driver Output Stage
The AUIRF7640S2TR can be used as a constant-current regulator or PWM switch in high-brightness automotive LED headlight and daytime running light applications. The Infineon datasheet specifies that the part's 36 mΩ RDS(on) and DirectFET SB thermal performance handle the 2 A to 5 A continuous currents typical of automotive LED strings. AEC-Q101 qualification and the -40 °C to +150 °C operating range match underhood and headlamp module environments.
추천
추천 제품 요약
엔지니어링 참조 데이터: AUIRF7640S2TR — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | AUIRF7640S2TR1 | AUIRF7640S2 | AUIRF7769L2TR | IRF6645TRPBF | IRF7240TRPBF |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | DirectFET SB | DirectFET SB - same | DirectFET SB - same | DirectFET L2 - same family, different case | DirectFET SB - same | DirectFET MZ - same family, different case |
| Drain-Source Voltage (VDS) | 60 V | 60 V | 60 V | 100 V | 100 V | 40 V |
| Continuous Drain Current (ID @ TC) | 21 A | 21 A | 21 A | 10 A | 19 A | 20 A |
| On-Resistance RDS(on) | 36 mΩ | 36 mΩ | 36 mΩ | 12 mΩ | 40 mΩ | 50 mΩ |
| Total Gate Charge (Qg) | 7.3 nC | 7.3 nC | 7.3 nC | 20 nC | 8.0 nC | 15 nC |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | Industrial grade (non-auto) | Industrial grade (non-auto) |
| Primary Application | Class D audio amplifier | Class D audio amplifier | Class D audio amplifier | High-frequency DC-DC | DC-DC synchronous rectification | Low-voltage DC-DC sync rect |
주요 차별점
- Automotive-grade qualification on a DirectFET-class part (vs IRF6645TRPBF)
- Lower RDS(on) than IRF6645 in same package (vs IRF6645TRPBF)
- Right voltage rating for 12V/24V automotive bus (vs IRF7240TRPBF)
설계 노트
Estimated: at ID = 10 A continuous and RDS(on) = 36 mΩ, conduction loss is approximately 3.6 W. Using a typical DirectFET SB junction-to-ambient thermal resistance of 50 C/W on a 1 oz 2 square-inch copper pour, junction temperature rises 180 °C above ambient. For continuous Class D audio operation, increase PCB copper area to at least 3-4 square inches or use multiple thermal vias to an internal copper plane to keep Tj below 150 °C. Always consult the manufacturer datasheet SOA curves for your specific pulse profile.
DirectFET SB layout requires that the drain copper pad cover the entire footprint of the metal can, with multiple thermal vias stitching to the opposite copper plane. Gate and source pads are on the top side of the package. Place the gate driver within 5 mm of the gate pad to minimize parasitic inductance; for switching above 100 kHz, add a 10 Ω gate-source resistor to prevent ringing.
Do not exceed VGS = ±20 V absolute maximum, even though the part is rated to handle avalanche. For Class D audio half-bridges, ensure the gate-source voltage of the high-side FET does not exceed ratings during the bootstrap charge phase - use a bootstrap capacitor with at least 100 nF and verify the high-side supply voltage under worst-case audio load.
규정 준수 정보
AEC-Q101 qualified (MOSFET automotive standard, distinct from AEC-Q100 which is for ICs). RoHS and lead-free per Infineon product page.
