ISC011N04NM7VATMA1 vs IAUC120N06S5N011ATMA1 비교
다음의 상세 나란히 비교: ISC011N04NM7VATMA1 제조: Infineon 및 IAUC120N06S5N011ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Infineon
IAUC120N06S5N011ATMA1 - 60V 1.1mΩ OptiMOS-5 N-Ch MOSFET | Infineon
IAUC120N06S5N011ATMA1 ✓ 활성사양 비교
| 파라미터 | ISC011N04NM7VATMA1 | IAUC120N06S5N011ATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.41 | $1.62 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 Power-Transistor | OptiMOS-5 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at TA=25°C | 38 A | — |
| Continuous Drain Current (ID) at TC | 256 A | — |
| On-Resistance RDS(on) max @ VGS=10V | 1.1 mΩ | — |
| Power Dissipation (TA) | 3 W | — |
| Power Dissipation (TC) | 136 W | — |
| Gate Threshold Voltage (Vth) | Up to 3.2 V | — |
| Technology | Trench MOSFET, silicon | — |
| 패키지 | PG-TDSON-8 (source-down) | PG-TDSON-8-53 (SSO8 5x6 mm) |
| 실장 유형 | Surface Mount | Surface Mount |
| Short-Circuit Withstand | Yes (current-limited) | — |
| 동작 온도 범위 | -55 °C to +175 °C (TJ) | -55°C to +175°C (Tj) |
| RoHS Compliance | Compliant (per Infineon product page) | Compliant |
| MSL 레벨 | MSL 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (Vdss) | — | 60 V |
| Continuous Drain Current (Id) | — | 120 A (Tc=25°C, Vgs=10V) |
| Pulsed Drain Current (Idm) | — | 310 A (Tj) |
| On-Resistance Rds(on) max | — | 1.1 mΩ at Vgs=10 V |
| Gate-Source Voltage (Vgs) max | — | ±20 V |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) value] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total value] |
| Power Dissipation (Pd) | — | 188 W (Tc=25°C) |
| Automotive Qualification | — | AEC-Q101 qualified |