K3LK8K80CM-MFCP - 48Gbit LPDDR5 6400Mbps DRAM | Samsung
부품 번호: K3LK8K80CM-MFCP ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $0 | $0.00 |
| 10 | $0 | $0.00 |
| 100 | $0 | $0.00 |
| 500 | $0 | $0.00 |
| 1,000 | $0 | $0.00 |
K3LK8K80CM-MFCP 개요
LPDDR5 is the fifth generation of low-power synchronous DRAM defined for mobile, automotive, and edge-computing systems. In the memory hierarchy it sits as the main working memory (DRAM) downstream of the SoC, complementing NAND storage (eMMC, UFS) that holds persistent data. LPDDR5 introduces clocking and data-replication features that let the DRAM operate at a lower core frequency while maintaining the same effective data rate, cutting dynamic power.
Key features of the K3LK8K80CM-MFCP include 6400 Mbps pin speed for high-bandwidth SoC interfaces, the compact 315-ball LPDDR5 FBGA footprint used by flagship application processors, and low-voltage signaling that reduces interface power versus previous generations.
This variant is specified as an automotive-grade storage chip with an operating temperature range of -40 C to +105 C, making it suitable for vehicle domains where consumer LPDDR5 would not survive. Samsung fabricates LPDDR5 on advanced DRAM process nodes, and this MPN originates from Johor, Malaysia per distributor listings.
Typical applications include automotive ADAS and infotainment main memory, 5G smartphone and modem memory buffers, AI edge accelerators, and high-performance portable compute. A memory controller with LPDDR5 support and proper signal-integrity-aware PCB routing is required.
Design consideration: LPDDR5 Fly-By/DQ signaling demands length-matched traces, on-die termination settings in the controller, and compliance with VDDQ voltage rails; consult the Samsung LPDDR5 design guide for power sequencing.
This page synthesizes distributor pricing leads, family cross-references, and practical design notes not found in a single manufacturer datasheet.
드롭인 대체품: K3LK8K80CM-MFCP — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: K3LK8K80CM-MFCP (동일 폼 팩터 및 풋프린트) — 차이점: Interface, Package, Memory Type, Density, Organization.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
K3LKJKJ0CM-MFCP
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$21.9 / 개
데이터시트 보기 →K3LK8L80CM-MGCT
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
가격 문의
데이터시트 보기 →K3LKCKC0BM-MGCP
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$65.625 / 개
데이터시트 보기 →K3LKBKB0BM-MGCP
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$46.62 / 개
데이터시트 보기 →K3LK4L40DM-BGCT
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$40.5 / 개
데이터시트 보기 →K3LK8K80CM-MFCP 최대 정격 & 전기적 특성
| 메모리 유형 | LPDDR5 SDRAM |
| Density | 48 Gbit (6 GB) |
| Pin Speed | 6400 Mbps |
| Data Rate (package) | 51.2 GB/s (family max) |
| 인터페이스 | LPDDR5 (JESD209-5 class low-power DRAM interface) |
| 패키지 | 315-ball FBGA (MFCP) |
| Ball Count | 315 |
| 실장 유형 | Surface Mount |
| 동작 온도 | -40 C to +105 C (automotive-grade) |
| Power Saving vs LPDDR4X | Approximately 20% |
| Generation | LPDDR5 (5th generation low-power DRAM) |
| Application Grade | Automotive-grade storage chip |
| Place of Origin | Johor, Malaysia |
| RoHS 상태 | unknown |
K3LK8K80CM-MFCP 315-ball fbga (mfcp) 핀 구성 가이드
K3LK8K80CM-MFCP(315-ball fbga (mfcp) 패키지)의 핀 구성입니다. 이 디지털 IC에는 GPIO, 통신 인터페이스(UART, SPI, I2C), 전원 핀이 포함되어 있습니다. 대체 핀 기능과 구성 옵션은 제조사 데이터시트를 참조하십시오. 임베디드 시스템 설계와 PCB 레이아웃에 필수적입니다.
다음에 대한 상세 핀아웃 데이터 없음: K3LK8K80CM-MFCP.
다음을 참조하십시오: 데이터시트 전체 핀 구성은 다음을 참조하십시오.
일반적인 애플리케이션
K3LK8K80CM-MFCP 적합 용도: 6 애플리케이션s: Automotive ADAS Main Memory, Automotive Infotainment and Cockpit, 5G Smartphone and Modem Memory, Edge AI Accelerators, Industrial Vision and Machine Cameras, Networking and Edge Compute Appliances.
Automotive ADAS Main Memory
The K3LK8K80CM-MFCP fits ADAS domain controllers because it combines 48 Gbit (6 GB) of LPDDR5 capacity with 6400 Mbps pin speed and an automotive -40 C to +105 C operating range, which consumer DRAM cannot guarantee. Sensor-fusion stacks processing camera, radar, and lidar streams need tens of GB/s of working-memory bandwidth; at the LPDDR5 family's 51.2 GB/s class throughput this part keeps multi-frame buffers and neural-network activations on-chip-adjacent without stalling the SoC. In the circuit it connects directly to the ADAS SoC's LPDDR5 memory controller via length-matched DQ/CA traces with on-die termination and proper power sequencing of the VDD/VDDQ rails. The -40 C to +105 C rating allows placement in passenger-compartment electronics with margin. The trade-off versus LPDDR4X is higher interface cost, offset by roughly 20% lower memory power per bit transferred.
추천
Automotive Infotainment and Cockpit
Digital cockpit SoCs driving multiple high-resolution displays require large frame buffers and fast memory; the K3LK8K80CM-MFCP provides 6 GB of LPDDR5 working memory at 6400 Mbps, enough for multi-display 2K/4K rendering plus navigation and voice stacks. The automotive -40 C to +105 C temperature range and automotive-grade listing from distributor data make it appropriate for head-unit environments with wide thermal excursions. In the design it attaches to the infotainment SoC's LPDDR5 PHY with Fly-By routing, 10-layer-plus PCB stackup for signal integrity, and bulk plus decoupling capacitance at each VDDQ ball cluster. The 20% power saving versus LPDDR4X reduces heat inside sealed head units, easing fanless thermal design. Verify the SoC memory-controller training support and confirm the MFCP package mechanical drawing before finalizing the land pattern.
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5G Smartphone and Modem Memory
Flagship smartphones pair 5G modems with LPDDR5 main memory because concurrent modem throughput and application processing saturate LPDDR4X bandwidth. The K3LK8K80CM-MFCP's 6400 Mbps pin speed delivers the family's 51.2 GB/s class bandwidth, sustaining camera bursts, AI inference, and background 5G traffic simultaneously. Samsung's LPDDR5 architecture provides roughly 20% power savings per bit versus LPDDR4X, directly extending battery life in always-connected devices. The 315-ball FBGA footprint is the standard mobile layout supported by major application-processor PHYs. Layout practice requires 0.4 mm-pitch-class fanout, length matching within the controller spec, and careful return-current management under DQ buses. Note that this MFCP-suffix part is listed as automotive-grade; consumer phone designs should confirm commercial-grade suffix availability and cost positioning with Samsung before adoption.
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Edge AI Accelerators
Edge AI modules for robotics, smart cameras, and industrial inference need high-bandwidth weight and activation memory close to the NPU. The K3LK8K80CM-MFCP supplies 48 Gbit of LPDDR5 at 6400 Mbps, allowing INT8/FP16 model activations to stream at the LPDDR5 family's 51.2 GB/s class rate without bottlenecking TOPS-hungry accelerators. Its -40 C to +105 C industrial-relevant range and automotive-grade listing also fit factory-floor edge boxes with wide ambient swings. The design connects the DRAM to the AI SoC over LPDDR5 with termination controlled by the PHY, and benefits from the ~20% power saving versus LPDDR4X in fanless enclosures. Key consideration: budget DRAM bandwidth across video ingest, inference, and output pipelines, since contention - not capacity - is usually the first limit at 6 GB.
추천
Industrial Vision and Machine Cameras
Machine-vision cameras capture multi-megapixel frames at high frame rates and run on-device inspection algorithms; both tasks stress memory bandwidth and capacity. The K3LK8K80CM-MFCP's 6 GB LPDDR5 buffers several full-resolution frames while the ISP and inference engine stream through it at 6400 Mbps per pin, and the -40 C to +105 C rating suits factory and outdoor enclosures that see temperature extremes. Compared with LPDDR4X designs, the LPDDR5 interface's ~20% power saving reduces heat in sealed camera housings, improving long-term sensor stability. Implementation uses the camera SoC's LPDDR5 controller with Fly-By topology, impedance-controlled routing, and startup memory training. A practical pitfall is underestimating peak burst demand during multi-stream capture; verify bandwidth margin with the controller vendor's traffic analyzer before committing the layout.
추천
Networking and Edge Compute Appliances
Enterprise Wi-Fi access points, 5G small cells, and SD-WAN appliances need working memory for packet buffers, flow tables, and control-plane software. The K3LK8K80CM-MFCP provides 6 GB of LPDDR5 at 6400 Mbps, delivering the bandwidth for line-rate forwarding on multi-gigabit ports while its LPDDR5 deep-sleep modes cut idle power versus previous-generation DRAM. The -40 C to +105 C operating range supports outdoor-mounted radios and unventilated cabinets. On the board, the memory attaches to the networking SoC with LPDDR5 signal-integrity practices: length-matched CA/DQ groups, solid reference planes, and per-rail bulk capacitance at the 315-ball cluster. The main trade-off against DDR4-based designs is cost per gigabyte, accepted here for power savings and bandwidth headroom. Confirm the SoC's LPDDR5 boot-training firmware support before layout release.
추천
추천 제품 요약
엔지니어링 참조 데이터: K3LK8K80CM-MFCP — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | K3LKJKJ0CM-MFCP | K3LK8L80CM-MGCT | K3LKCKC0BM-MGCP | K3LK4L40DM-BGCT |
|---|---|---|---|---|---|
| Package | 315-ball FBGA (MFCP) | 315-ball FBGA (MFCP) - same family | 315-ball FBGA (MGCT) | 315-ball FBGA (MGCP) | FBGA (BGCT) |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Memory Type | LPDDR5 SDRAM | LPDDR5 SDRAM | LPDDR5 SDRAM | LPDDR5 SDRAM | LPDDR5 SDRAM |
주요 차별점
- Automotive temperature range (vs K3LK8L80CM-MGCT)
- Highest-speed LPDDR5 generation (vs K3LK4L40DM-BGCT)
- Identical MFCP package family layout reuse (vs K3LKJKJ0CM-MFCP)
설계 노트
LPDDR5 at 6400 Mbps demands disciplined routing: length-match DQ to DQS within controller-specified skew, keep CA group matched to clock, and route over unbroken reference planes. The 315-ball FBGA fanout typically requires HDI or at least 8-10 layer stackup with micro-vias near the ball field. Simulate eye diagrams at the die bump if your controller vendor provides IBIS-AMI models; re-run training margins at -40 C and +105 C corners since skew drifts with temperature.
Power the LPDDR5 rails (VDD, VDDQ per the NDA datasheet - exact values not published here) from dedicated DC-DC converters with sequencing per the Samsung LPDDR5 power-up specification. Estimated: at the family's roughly 20% power saving versus LPDDR4X, memory active power drops proportionally per bit, but peak burst current at 6400 Mbps still requires low-ESR bulk capacitance (e.g., 100 uF-class plus 0.1 uF decoupling per ball cluster) placed within 2 mm of VDDQ balls.
Do not assume cross-brand LPDDR5 drop-in compatibility. Although the LPDDR5 interface is standardized in philosophy, ball maps, boot-time training sequences, and temperature-sensor behavior differ between vendors and even between Samsung suffixes (MFCP vs MGCT vs BGCT). Validate the exact suffix's mechanical drawing and AC timing tables from the official Samsung datasheet, and re-run controller training firmware whenever the DRAM MPN changes. Sourcing via brokers (24+/25+ date codes) requires authenticity verification for automotive builds.
규정 준수 정보
Distributor listings describe the part as automotive-grade storage with -40 C to +105 C range, but no explicit RoHS/REACH/AEC-Q100 certification statements appear in the verified data. Obtain formal compliance certificates from Samsung or the distributor.
