K9JUGY8J5C-CCK0 vs K9KUGY8J7C-BCK0 비교

다음의 상세 나란히 비교: K9JUGY8J5C-CCK0 제조: Samsung Electronics 및 K9KUGY8J7C-BCK0 제조: Samsung Electronics. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Samsung Electronics
K9JUGY8J5C-CCK0 K9JUGY8J5C-CCK0 - 1Tb TLC V-NAND Flash | Samsung

K9JUGY8J5C-CCK0 - 1Tb TLC V-NAND Flash | Samsung

K9JUGY8J5C-CCK0 ✓ 활성
Samsung Electronics
K9KUGY8J7C-BCK0 K9KUGY8J7C-BCK0 - 1Tb TLC NAND Flash Memory | Samsung Electronics

K9KUGY8J7C-BCK0 - 1Tb TLC NAND Flash Memory | Samsung Electronics

K9KUGY8J7C-BCK0 ✓ 활성

사양 비교

파라미터 K9JUGY8J5C-CCK0 K9KUGY8J7C-BCK0
브랜드 Samsung Electronics Samsung Electronics
카테고리 Memory ICs Memory ICs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $7.60 $9.55
Manufacturer Samsung Electronics Samsung Electronics
메모리 유형 NAND Flash - V-NAND (TLC) NAND Flash (TLC V-NAND)
Density 1 Tb (128 GB) 1 Tb
Cell Type TLC (Triple-Level Cell) TLC (3 bits/cell)
Technology Generation V6 (6th-gen V-NAND, 128-layer) —
메모리 구성 [DATA_NEEDED: page/block organization] [DATA_NEEDED: page/block organization]
인터페이스 [DATA_NEEDED: toggle/ONFI mode] —
패키지 [DATA_NEEDED: BGA package code and dimensions] —
실장 유형 Surface Mount Surface Mount
Supply Voltage (VCC) [DATA_NEEDED: VCC range] [DATA_NEEDED: VCC range in V]
Supply Voltage (VCCQ) [DATA_NEEDED: VCCQ range] [DATA_NEEDED: VCCQ range in V]
Read Latency [DATA_NEEDED: tR] —
Program Time [DATA_NEEDED: tPROG] —
Endurance (P/E cycles) [DATA_NEEDED: rated P/E cycles] —
동작 온도 [DATA_NEEDED: temperature range] [DATA_NEEDED: temperature range in C]
RoHS 상태 [DATA_NEEDED: RoHS status] Compliant
MSL 레벨 [DATA_NEEDED: moisture sensitivity level] —
인터페이스 유형 — [DATA_NEEDED: toggle DDR / ONFI mode]
Page Size — [DATA_NEEDED: page size in KB]
Block Size — [DATA_NEEDED: block size]
Program/Erase Cycles — [DATA_NEEDED: P/E endurance]
Package Type — BGA
Package Code — [DATA_NEEDED: package code / ball count]
Grade Suffix — BCK0

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