K9JUGY8J5C-CCK0 vs K9KUGY8J7C-BCK0 对比

详细并排对比 K9JUGY8J5C-CCK0 出自 Samsung Electronics 和 K9KUGY8J7C-BCK0 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Samsung Electronics
K9JUGY8J5C-CCK0 K9JUGY8J5C-CCK0 - 1Tb TLC V-NAND Flash | Samsung

K9JUGY8J5C-CCK0 - 1Tb TLC V-NAND Flash | Samsung

K9JUGY8J5C-CCK0 ✓ 量产中
Samsung Electronics
K9KUGY8J7C-BCK0 K9KUGY8J7C-BCK0 - 1Tb TLC NAND Flash Memory | Samsung Electronics

K9KUGY8J7C-BCK0 - 1Tb TLC NAND Flash Memory | Samsung Electronics

K9KUGY8J7C-BCK0 ✓ 量产中

规格对比

参数 K9JUGY8J5C-CCK0 K9KUGY8J7C-BCK0
品牌 Samsung Electronics Samsung Electronics
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $7.60 $9.55
Manufacturer Samsung Electronics Samsung Electronics
存储器类型 NAND Flash - V-NAND (TLC) NAND Flash (TLC V-NAND)
Density 1 Tb (128 GB) 1 Tb
Cell Type TLC (Triple-Level Cell) TLC (3 bits/cell)
Technology Generation V6 (6th-gen V-NAND, 128-layer) —
存储组织 [DATA_NEEDED: page/block organization] [DATA_NEEDED: page/block organization]
接口 [DATA_NEEDED: toggle/ONFI mode] —
封装 [DATA_NEEDED: BGA package code and dimensions] —
安装类型 Surface Mount Surface Mount
Supply Voltage (VCC) [DATA_NEEDED: VCC range] [DATA_NEEDED: VCC range in V]
Supply Voltage (VCCQ) [DATA_NEEDED: VCCQ range] [DATA_NEEDED: VCCQ range in V]
Read Latency [DATA_NEEDED: tR] —
Program Time [DATA_NEEDED: tPROG] —
Endurance (P/E cycles) [DATA_NEEDED: rated P/E cycles] —
工作温度 [DATA_NEEDED: temperature range] [DATA_NEEDED: temperature range in C]
RoHS 状态 [DATA_NEEDED: RoHS status] Compliant
MSL 等级 [DATA_NEEDED: moisture sensitivity level] —
接口类型 — [DATA_NEEDED: toggle DDR / ONFI mode]
Page Size — [DATA_NEEDED: page size in KB]
Block Size — [DATA_NEEDED: block size]
Program/Erase Cycles — [DATA_NEEDED: P/E endurance]
Package Type — BGA
Package Code — [DATA_NEEDED: package code / ball count]
Grade Suffix — BCK0

数据手册与资源

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