K9LUGY8J7D-CCK0 - Samsung V-NAND TLC Flash | Samsung Electronics
부품 번호: K9LUGY8J7D-CCK0 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $0 | $0.00 |
| 10 | $0 | $0.00 |
| 100 | $0 | $0.00 |
| 500 | $0 | $0.00 |
| 1,000 | $0 | $0.00 |
K9LUGY8J7D-CCK0 개요
NAND flash is a type of non-volatile memory that retains data without power and sits within the broader hierarchy of storage semiconductors: NAND flash -> solid-state storage -> memory IC -> semiconductor. TLC V-NAND stores three bits per cell using vertically stacked charge-trap layers, which dramatically increases bit density per wafer compared to planar NAND. Devices in this class are the core storage media for SSDs, embedded storage, and enterprise storage systems.
Key characteristics typical of this Samsung V-NAND generation include a high-speed toggle-mode DDR interface, ONFI-compatible command protocols, page and block-organized memory arrays, and end-of-life data retention managed through ECC-heavy controller designs. The BGA footprint enables compact board layout and automated reflow assembly.
This device is typically designed into solid-state drives (SSDs), embedded USB storage modules, memory cards, and industrial storage systems where high capacity per package is critical. Enterprise and datacenter storage arrays also use parts of this class for cost-per-TB optimization.
A critical design consideration is that TLC V-NAND must always be paired with a controller implementing strong ECC (LDPC), wear-leveling, and bad-block management; direct raw access without such management will cause data corruption over the rated program/erase endurance.
This page synthesizes drop-in same-family alternatives from the Samsung V-NAND cross-reference family, practical design notes, and application guidance not found in a single distributor listing.
드롭인 대체품: K9LUGY8J7D-CCK0 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: K9LUGY8J7D-CCK0 (동일 폼 팩터 및 풋프린트) — 차이점: Memory Type, Cell Type, RoHS Status, Technology, Mounting Type.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
K9LUGY8J7D-BCK0
✅ 드롭인✓ 재고 있음
가격 문의
데이터시트 보기 →K9KUGY8J7C-CCK0
✅ 드롭인✓ 재고 있음
가격 문의
데이터시트 보기 →K9KUGY8J7C-BCK0
✅ 드롭인✓ 재고 있음
$9.55 / 개
데이터시트 보기 →K9JUGY8J5C-CCK0
✅ 드롭인✓ 재고 있음
$7.6 / 개
데이터시트 보기 →K9JUGY8J5C-BCK0
✅ 드롭인✓ 재고 있음
가격 문의
데이터시트 보기 →K9IUGY8J7B-CCK0
✅ 드롭인✓ 재고 있음
$1 / 개
데이터시트 보기 →K9HUGY8J5B-CCK0
✅ 드롭인✓ 재고 있음
$9.6 / 개
데이터시트 보기 →K9LUGY8J7D-CCK0 최대 정격 & 전기적 특성
| Manufacturer | Samsung Electronics |
| 메모리 유형 | NAND Flash (V-NAND) |
| Memory Cell Type | TLC (Triple-Level Cell) |
| Technology | V-NAND (vertical NAND) |
| 패키지 | BGA (surface mount) |
| 실장 유형 | Surface Mount |
| Speed Grade Code | CCK0 (per Samsung part-number convention) |
K9LUGY8J7D-CCK0 bga (surface mount) 핀 구성 가이드
K9LUGY8J7D-CCK0(bga (surface mount) 패키지)의 핀 구성입니다. 이 디지털 IC에는 GPIO, 통신 인터페이스(UART, SPI, I2C), 전원 핀이 포함되어 있습니다. 대체 핀 기능과 구성 옵션은 제조사 데이터시트를 참조하십시오. 임베디드 시스템 설계와 PCB 레이아웃에 필수적입니다.
다음에 대한 상세 핀아웃 데이터 없음: K9LUGY8J7D-CCK0.
다음을 참조하십시오: 데이터시트 전체 핀 구성은 다음을 참조하십시오.
일반적인 애플리케이션
K9LUGY8J7D-CCK0 적합 용도: 6 애플리케이션s: Solid-State Drives (SSD), Embedded Storage (eMMC/UFS-class subsystems), Datacenter and Enterprise Storage, USB Flash Drive and Memory Card Products, Industrial and Rugged Storage, AIoT and Smart Camera Storage.
Solid-State Drives (SSD)
The K9LUGY8J7D-CCK0 serves as core non-volatile storage media in client and enterprise SSD designs. Samsung GY8-generation V-NAND TLC offers high bits-per-package density, which reduces the number of packages required per drive and lowers PCB area and BOM cost per terabyte. In an SSD, multiple V-NAND packages connect to a controller over toggle DDR channels; the CCK0 speed grade defines the timing envelope the controller must support. Strong LDPC ECC and wear-leveling in the controller are mandatory to meet rated program/erase endurance and data retention over the drive lifetime.
추천
Embedded Storage (eMMC/UFS-class subsystems)
Designers of embedded storage modules use high-density TLC V-NAND such as the K9LUGY8J7D-CCK0 as the raw storage behind managed controllers in set-top boxes, smart displays, and industrial HMI equipment. The BGA package supports compact, reflow-assembled module layouts, and the high per-package density lets a small module reach large capacities with fewer NAND channels. Because raw NAND requires full firmware management (bad-block tables, ECC, garbage collection), pair this device with a controller firmware qualified for Samsung GY8-generation device IDs and timing (C-series speed code).
추천
Datacenter and Enterprise Storage
Enterprise storage arrays and all-flash appliances deploy TLC V-NAND parts of this class to achieve competitive cost-per-TB while maintaining acceptable write endurance under datacenter workloads. The K9LUGY8J7D-CCK0, as a Samsung GY8-generation V-NAND device, provides the stacked-cell density needed to pack tens of terabytes into a single drive form factor. Enterprise deployments typically provision over-provisioning headroom and power-loss protection capacitors around the NAND rails, and qualify the exact CCK0 speed grade on the controller's firmware qualified-vendor list before volume commits.
추천
USB Flash Drive and Memory Card Products
High-capacity USB flash drives and high-performance memory cards build on TLC V-NAND dies and packages of this Samsung family, where cost per gigabyte is the dominant design factor. The K9LUGY8J7D-CCK0's high density allows a single or few packages to deliver large capacities within the tight mechanical envelope of a card or stick. USB controller firmware must support the Samsung device ID and toggle-mode timings associated with the CCK0 code; sequential read/write performance is bounded by the number of NAND channels and the speed grade, so verify controller channel configuration against datasheet timing before committing.
추천
Industrial and Rugged Storage
Industrial computers, transportation recorders, and ruggedized logging equipment use TLC V-NAND such as the K9LUGY8J7D-CCK0 inside industrial SD/CFast modules and BGA-down storage solutions, valuing vibration immunity of surface-mount BGA assembly over rotating media. Confirm the temperature grade encoded in the device suffix matches the industrial environment; if extended temperature is required, validate with Samsung that this specific speed/packaging code meets the target range. Controller firmware should implement periodic data refresh and power-fail resilience to protect retention and integrity in harsh duty cycles.
추천
AIoT and Smart Camera Storage
AI camera nodes, smart doorbells, and edge video recorders require dense, power-efficient local storage for continuous video buffering and on-device analytics data. TLC V-NAND of the Samsung GY8 generation provides high capacity per package, letting compact edge boards store days of video or model artifacts locally. The K9LUGY8J7D-CCK0 interfaces through the host SoC or a dedicated NAND controller over toggle DDR; designers must budget for sequential write bandwidth of the CCK0 speed grade and implement cyclic overwrites plus health monitoring so sustained 24/7 recording stays within the rated endurance profile.
추천
추천 제품 요약
엔지니어링 참조 데이터: K9LUGY8J7D-CCK0 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | K9LUGY8J7D-BCK0 | K9KUGY8J7C-CCK0 | K9JUGY8J5C-CCK0 |
|---|---|---|---|---|
| Package | BGA (surface mount) | BGA - same | BGA - same family | BGA - same family |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Cell Type | TLC V-NAND | TLC V-NAND | TLC V-NAND | TLC V-NAND |
| Speed Grade Code | CCK0 | BCK0 | CCK0 | CCK0 |
| Lifecycle Status | Active (verify with Samsung) | Active | Active | Older generation - verify status |
주요 차별점
- Latest C-series speed grade within the same die generation (vs K9LUGY8J7D-BCK0)
- Samsung V-NAND vertical stacking (vs K9HUGY8J5B-CCK0)
- Footprint compatibility across family speed grades (vs K9JUGY8J5C-BCK0)
설계 노트
Treat the toggle DDR NAND channel of the K9LUGY8J7D-CCK0 as a controlled-impedance bus. Length-match data signals within the timing budget in the Samsung datasheet, maintain an unbroken ground reference plane under the bus, and series-terminate at the controller where recommended. Place the BGA close to the controller to minimize stub length; keep DQ/RE/CE routing away from switching regulator nodes to avoid coupling jitter into read timing margins.
Decouple every VCC and VCCQ ball of the BGA package with low-ESR ceramic capacitors placed adjacent to the ball via pairs. Use dedicated power planes for VCCQ (I/O) and VCC (core) with ferrite or PI filtering per Samsung's reference design guidance to reduce supply noise during simultaneous program operations, which draw high transient currents. Estimated: peak program current is highest when multiple dies program concurrently - size the regulator for worst-case multi-die concurrent program, not just average read current.
Never connect raw TLC V-NAND directly to a host without LDPC ECC, bad-block management, and wear-leveling firmware; TLC cells require strong error correction and the device ID/timing profile of the exact speed-grade code (CCK0) must be in the controller firmware's supported list. Also verify the reflow profile suits lead-free BGA balls, and confirm second-source substitutions (e.g., BCK0 vs CCK0) against controller qualified-vendor lists before mass production.
규정 준수 정보
Compliance data was not present in the retrieved web data. Request Samsung material declaration sheets (MDS) and certificate of conformance from Samsung distribution for this exact MPN.
