L6566BTR vs ICE3A2065Z 비교

다음의 상세 나란히 비교: L6566BTR 제조: STMicroelectronics 및 ICE3A2065Z 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 L6566BTR ICE3A2065Z
브랜드 STMicroelectronics Infineon
카테고리 DC-DC Converters DC-DC Converters
수명 주기 상태 활성 NRND
재고 상태 In Stock In Stock
단가 (USD) $0.68 $0.58
토폴로지 Flyback (Offline), multi-mode (fixed-frequency / quasi-resonant) Flyback (off-line SMPS current-mode controller)
Switching Frequency Range 10 kHz to 300 kHz (programmable) —
Supply Voltage (Vcc) 8 V to 23 V —
Peak Gate Drive Source/Sink Current 800 mA —
대기 전류 3 mA (typical) —
High-Voltage Start-up On-board 700 V MOSFET —
Control Mode Current-mode PWM —
UVLO Adaptive (with line feedforward) —
Light-Load Management Burst-mode / frequency foldback —
Protection Features OCP, OVP, transformer saturation detection, auto-restart —
패키지 SO-16 (narrow body, 150 mil) PG-DIP-7-1 (7-pin PDIP through-hole)
실장 유형 Surface Mount Through-Hole (THT)
동작 온도 -40C to +150C (junction) —
MSL 레벨 1 —
RoHS 상태 Compliant —
Lead-Free Finish Yes (Matte Tin) —
스위칭 주파수 — 100 kHz fixed
Integrated Power Switch — 650V Depletion CoolMOS
Drain-Source Breakdown Voltage (VDS max) — 650 V
On-Resistance (RDS(on) max) — 1.05 ohm
Maximum Drain Current (ID max) — 2.0 A pulsed
Maximum Output Power — 28 W (typical adapter application)
VCC Supply Voltage Range — 8.5 V to 21 V
Quiescent Current (ICC) — 7.1 mA
동작 접합 온도 — -25 °C to +130 °C
Thermal Resistance Junction-to-Ambient (RthJA) — 96 K/W
ESD Protection (HBM) — 3.0 kV
Burst Mode — Active Burst Mode (standby < 100 mW at no load)
Lead-Free / RoHS — Compliant (per device spec excerpt)
Recommended Replacement — ICE3A2065ELJ (new design only; different package)

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