LMG3422R030RQZT - 600V 30mΩ GaN FET with Integrated Driver | TI
부품 번호: LMG3422R030RQZT ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $12.5 | $12.50 |
| 10 | $11.25 | $112.50 |
| 100 | $10 | $1,000.00 |
| 500 | $9 | $4,500.00 |
| 1,000 | $8.1 | $8,100.00 |
LMG3422R030RQZT 개요
GaN FETs are a class of wide-bandgap power semiconductors that offer lower gate charge and faster switching than silicon MOSFETs, reducing switching losses and enabling higher power density. The LMG3422R030 integrates the driver and protection circuitry, simplifying design and improving reliability by minimizing parasitic inductance. This integration is part of a broader trend toward power management ICs that combine power stage and control for compact, efficient converters.
Key features include integrated overcurrent and overtemperature protection, a temperature reporting pin, and adjustable gate drive strength. The device supports a wide input voltage range and provides clean switching with minimal ringing, as highlighted in the datasheet. The low-inductance package and integrated driver enable higher switching SOA compared to discrete solutions.
The LMG3422R030 is ideal for applications such as server power supplies, telecom rectifiers, solar inverters, and electric vehicle onboard chargers, where high efficiency and power density are critical. Its 600-V rating and 30-mΩ RDS(on) make it suitable for totem-pole PFC, LLC converters, and other hard-switching topologies.
When designing with this device, ensure proper thermal management via the exposed pad and adequate PCB copper area. The integrated driver simplifies layout, but attention to gate drive loop and snubber design is recommended to minimize ringing. The device is available in tape and reel packaging, with pricing as of 2026-08-27.
드롭인 대체품: LMG3422R030RQZT — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: LMG3422R030RQZT (동일 폼 팩터 및 풋프린트) — 차이점: Drain-Source Voltage (VDS), Integrated Driver, Package.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
LMG3422R030RQZR
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
LMG3422R050RQZT
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
LMG3522R030RQSR
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$8.16 / 개
데이터시트 보기 →LMG3426R030
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
LMG3427R030
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
LMG3422R030RQZT 최대 정격 & 전기적 특성
| Drain-Source Voltage (VDS) | 600 V |
| On-Resistance (RDS(on)) | 30 mΩ |
| Continuous Drain Current | 40 A |
| 스위칭 주파수 | 2.2 MHz |
| Slew Rate | 20 V/ns to 150 V/ns |
| FET Hold-off | 200 V/ns |
| Integrated Driver | Yes |
| Protection | Overcurrent, Overtemperature |
| Temperature Reporting | Yes |
| 패키지 | 54-VQFN (12x12 mm) |
| 실장 유형 | Surface Mount |
| Qualification | JEDEC JEP180 |
| Gate Drive Strength | Adjustable |
| 동작 온도 | -40°C to +125°C |
| RoHS 상태 | Compliant |
LMG3422R030RQZT 핀 구성
| 핀 1 | VIN — Input supply for driver |
| 핀 2 | VDD — Gate driver supply |
| 핀 3 | PWM — PWM input |
| 핀 4 | EN — Enable pin |
| 핀 5 | FLT — Fault output |
| 핀 6 | TEMP — Temperature reporting |
| 핀 7 | GND — Ground |
| 핀 8 | SW — Switch node |
| 핀 9 | D — Drain of GaN FET |
| 핀 10 | S — Source of GaN FET |
안전 동작 영역
일반적인 애플리케이션
LMG3422R030RQZT 적합 용도: 6 애플리케이션s: Server Power Supplies, Telecom Rectifiers, Solar Inverters, Electric Vehicle Onboard Chargers, Industrial Power Supplies, Data Center Power.
Server Power Supplies
The LMG3422R030's 600-V rating and 30-mΩ RDS(on) enable high-efficiency, high-density power conversion in server PSUs. Its integrated driver simplifies layout and reduces parasitic inductance, while the 2.2-MHz switching frequency allows smaller magnetics. The device's overcurrent and overtemperature protection ensure reliable operation in demanding data center environments.
추천
Telecom Rectifiers
In telecom rectifiers, the LMG3422R030 provides high efficiency and power density, reducing cooling requirements. Its fast switching (up to 150 V/ns) minimizes switching losses, and the integrated driver reduces component count. The device's JEDEC JEP180 qualification ensures robustness in hard-switching topologies like totem-pole PFC.
추천
Solar Inverters
The LMG3422R030 is ideal for solar inverters, where high efficiency and reliability are paramount. Its 600-V rating handles typical DC bus voltages, and the low RDS(on) reduces conduction losses. The integrated temperature reporting allows real-time thermal monitoring, enabling adaptive control to maximize energy harvest.
추천
Electric Vehicle Onboard Chargers
In EV onboard chargers, the LMG3422R030's high switching frequency and low losses enable compact, efficient designs. The integrated driver reduces gate drive complexity, and the protection features enhance system safety. The device's wide operating temperature range (-40°C to +125°C) suits automotive environments.
추천
Industrial Power Supplies
The LMG3422R030 is suitable for industrial power supplies requiring high efficiency and reliability. Its 600-V rating and 30-mΩ RDS(on) allow operation from 3-phase mains. The integrated driver and protection simplify design, while the 2.2-MHz switching frequency reduces transformer size, saving board space.
추천
Data Center Power
For data center power distribution, the LMG3422R030 offers high efficiency and power density, reducing energy costs. Its fast switching and low losses enable compact designs, and the integrated temperature reporting aids in thermal management. The device's protection features ensure reliable operation in 24/7 environments.
추천
추천 제품 요약
엔지니어링 참조 데이터: LMG3422R030RQZT — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | LMG3422R030RQZR | LMG3422R050RQZT | LMG3522R030RQSR |
|---|---|---|---|---|
| Package | 54-VQFN (12x12 mm) | 54-VQFN (12x12 mm) | 54-VQFN (12x12 mm) | 54-VQFN (12x12 mm) |
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
| Drain-Source Voltage | 600 V | 600 V | 600 V | 600 V |
| On-Resistance | 30 mΩ | 30 mΩ | 50 mΩ | 30 mΩ |
| Continuous Drain Current | 40 A | 40 A | 40 A | 40 A |
| Switching Frequency | 2.2 MHz | 2.2 MHz | 2.2 MHz | 2.2 MHz |
| Integrated Driver | Yes | Yes | Yes | Yes |
| Protection | Overcurrent, Overtemperature | Overcurrent, Overtemperature | Overcurrent, Overtemperature | Overcurrent, Overtemperature |
주요 차별점
- Integrated driver reduces component count and parasitic inductance (vs Discrete GaN FET + driver solutions)
- JEDEC JEP180 qualification for hard-switching topologies (vs LMG3422R050)
- Lower RDS(on) than LMG3422R050 (vs LMG3422R050)
설계 노트
The LMG3422R030 can dissipate significant power at high currents. Ensure adequate PCB copper area and thermal vias under the exposed pad to keep junction temperature within limits. For 40 A continuous operation, a heatsink or forced airflow may be required.
Minimize the gate drive loop and power loop inductance by placing the device close to the controller and using low-inductance layout techniques. The integrated driver reduces external components, but proper decoupling of VDD and VIN is essential for stable operation.
Do not exceed the absolute maximum ratings for VDS and current. Ensure the PWM input is properly level-shifted and has adequate dead-time to prevent shoot-through. The temperature reporting pin should be monitored for overtemperature conditions.
규정 준수 정보
RoHS compliant per TI product page. Not AEC-Q100 qualified.
