MPX5010GS vs MPX5010DP 비교

다음의 상세 나란히 비교: MPX5010GS 제조: NXP Semiconductors 및 MPX5010DP 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

NXP Semiconductors
MPX5010GS MPX5010GS - 10kPa Gauge Pressure Sensor, 5V, 6-SIP | NXP

MPX5010GS - 10kPa Gauge Pressure Sensor, 5V, 6-SIP | NXP

MPX5010GS ✓ 활성
NXP Semiconductors
MPX5010DP MPX5010DP - 10kPa Differential Pressure Sensor, 5V | NXP/ST

MPX5010DP - 10kPa Differential Pressure Sensor, 5V | NXP/ST

MPX5010DP ✓ 활성

사양 비교

파라미터 MPX5010GS MPX5010DP
브랜드 NXP Semiconductors NXP Semiconductors
카테고리 Pressure Sensors Pressure Sensors
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $10.85 $9.60
Pressure Type Vented Gauge Differential
Operating Pressure Range 0 kPa to 10 kPa (0 to 1.45 PSI) 0 kPa to 10 kPa (0 to 1.45 PSI)
Maximum Overpressure [DATA_NEEDED: maximum overpressure rating] —
동작 공급 전압 4.75 V to 5.25 V (5 V typical) —
공급 전류 5 mA typical [DATA_NEEDED: supply current mA]
출력 전압 범위 0.2 V to 4.7 V at 5 V supply 0.2 V to 4.7 V
Accuracy +/-2.5% of full-scale span —
Response Time 1.0 ms typical —
동작 온도 0 C to +85 C (compensated) 0 C to +85 C (compensated)
Storage Temperature -40 C to +125 C [DATA_NEEDED: storage temperature C]
출력 유형 Analog, ratiometric Analog, ratiometric
Port Type Male 0.19" (4.93 mm) tube, axial —
패키지 6-SIP Module, Case 867E-03 6-SIP Module
Sensing Technology Piezoresistive (silicon strain gauge) —
실장 유형 Through-hole, axial tube Through-hole (SIP)
RoHS 상태 [DATA_NEEDED: RoHS status] Compliant
Maximum Overload Pressure — [DATA_NEEDED: max overload kPa]
Sensitivity — 450 mV/kPa (typical)
공급 전압 — 4.75 V to 5.25 V (5 V typical)
Linearity — ±1.5% VFSS (typical, 0-85 C)
Port Configuration — Dual axial ports, 4.93 mm (0.19 in) tube
Technology — Piezoresistive, monolithic silicon, on-chip signal conditioned

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