MPX5010GS vs MPX5010DP Vergleich
Detaillierter Direktvergleich von MPX5010GS von NXP Semiconductors und MPX5010DP von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | MPX5010GS | MPX5010DP |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | Pressure Sensors | Pressure Sensors |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $10,85 | $9,60 |
| Pressure Type | Vented Gauge | Differential |
| Operating Pressure Range | 0 kPa to 10 kPa (0 to 1.45 PSI) | 0 kPa to 10 kPa (0 to 1.45 PSI) |
| Maximum Overpressure | [DATA_NEEDED: maximum overpressure rating] | — |
| Betriebsversorgungsspannung | 4.75 V to 5.25 V (5 V typical) | — |
| Versorgungsstrom | 5 mA typical | [DATA_NEEDED: supply current mA] |
| Ausgangsspannungsbereich | 0.2 V to 4.7 V at 5 V supply | 0.2 V to 4.7 V |
| Accuracy | +/-2.5% of full-scale span | — |
| Response Time | 1.0 ms typical | — |
| Betriebstemperatur | 0 C to +85 C (compensated) | 0 C to +85 C (compensated) |
| Storage Temperature | -40 C to +125 C | [DATA_NEEDED: storage temperature C] |
| Ausgangstyp | Analog, ratiometric | Analog, ratiometric |
| Port Type | Male 0.19" (4.93 mm) tube, axial | — |
| Gehäuse | 6-SIP Module, Case 867E-03 | 6-SIP Module |
| Sensing Technology | Piezoresistive (silicon strain gauge) | — |
| Montageart | Through-hole, axial tube | Through-hole (SIP) |
| RoHS-Status | [DATA_NEEDED: RoHS status] | Compliant |
| Maximum Overload Pressure | — | [DATA_NEEDED: max overload kPa] |
| Sensitivity | — | 450 mV/kPa (typical) |
| Versorgungsspannung | — | 4.75 V to 5.25 V (5 V typical) |
| Linearity | — | ±1.5% VFSS (typical, 0-85 C) |
| Port Configuration | — | Dual axial ports, 4.93 mm (0.19 in) tube |
| Technology | — | Piezoresistive, monolithic silicon, on-chip signal conditioned |