MPX5010GS vs MPX5010DP Comparación
Comparación detallada lado a lado de MPX5010GS por NXP Semiconductors y MPX5010DP por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | MPX5010GS | MPX5010DP |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | Pressure Sensors | Pressure Sensors |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $10,85 | $9,60 |
| Pressure Type | Vented Gauge | Differential |
| Operating Pressure Range | 0 kPa to 10 kPa (0 to 1.45 PSI) | 0 kPa to 10 kPa (0 to 1.45 PSI) |
| Maximum Overpressure | [DATA_NEEDED: maximum overpressure rating] | — |
| Tensión de alimentación de funcionamiento | 4.75 V to 5.25 V (5 V typical) | — |
| Corriente de alimentación | 5 mA typical | [DATA_NEEDED: supply current mA] |
| Rango de tensión de salida | 0.2 V to 4.7 V at 5 V supply | 0.2 V to 4.7 V |
| Accuracy | +/-2.5% of full-scale span | — |
| Response Time | 1.0 ms typical | — |
| Temperatura de funcionamiento | 0 C to +85 C (compensated) | 0 C to +85 C (compensated) |
| Storage Temperature | -40 C to +125 C | [DATA_NEEDED: storage temperature C] |
| Tipo de salida | Analog, ratiometric | Analog, ratiometric |
| Port Type | Male 0.19" (4.93 mm) tube, axial | — |
| Encapsulado | 6-SIP Module, Case 867E-03 | 6-SIP Module |
| Sensing Technology | Piezoresistive (silicon strain gauge) | — |
| Tipo de montaje | Through-hole, axial tube | Through-hole (SIP) |
| Estado RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Maximum Overload Pressure | — | [DATA_NEEDED: max overload kPa] |
| Sensitivity | — | 450 mV/kPa (typical) |
| Tensión de alimentación | — | 4.75 V to 5.25 V (5 V typical) |
| Linearity | — | ±1.5% VFSS (typical, 0-85 C) |
| Port Configuration | — | Dual axial ports, 4.93 mm (0.19 in) tube |
| Technology | — | Piezoresistive, monolithic silicon, on-chip signal conditioned |