MRF8HP21130HSR3 - 28W RF Power MOSFET, 2110-2170 MHz | NXP
부품 번호: MRF8HP21130HSR3 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $78.5 | $78.50 |
| 10 | $72.4 | $724.00 |
| 100 | $64.8 | $6,480.00 |
| 500 | $58.2 | $29,100.00 |
| 1,000 | $53.1 | $53,100.00 |
MRF8HP21130HSR3 개요
A lateral N-channel RF power MOSFET is a discrete transistor whose drain current flows laterally through a silicon die optimized for radio-frequency power amplification, as opposed to small-signal or switching transistors. In the power-amplifier (PA) hierarchy, RF power MOSFETs sit beneath GaN HEMTs and LDMOS devices and above small-signal MOSFETs, and are categorized by frequency band, breakdown voltage, and package style. The MRF8HP21130HSR3 belongs to NXP's MRF8HP high-power LDMOS family, engineered for sub-3 GHz cellular infrastructure where Doherty topologies are the dominant efficiency-boosting architecture.
Key features include 14 dB small-signal gain, 28 W average output power with peak envelope power suited for LTE 10 MHz carrier waveforms, and a 28 V drain bias. The NI-780S-4 air-cavity ceramic package provides low thermal resistance and repeatable RF performance critical for Doherty amplifier combining. The device operates as part of a two-stage in-package Doherty configuration with integrated input splitter and output combiner, reducing external PCB complexity for the symmetric Doherty PA designer.
Typical applications include W-CDMA and LTE base station power amplifiers, Doherty final-stage transmitters in the 2110-2170 MHz band (Band I / Band 4 / Band 10), and macro-cell or small-cell cellular infrastructure where the high gain and integrated package simplify board layout. The part is also referenced in design examples for driver and final-stage combinations in multi-carrier GSM/EDGE upgrade paths.
When designing with this MOSFET, attention to PCB material and thermal management is critical. Use low-loss RF substrates such as Rogers RO4350B or RO4003C for the matching networks, and ensure the NI-780S-4 flange is bolted to a heatsink with proper thermal compound. Drain bias sequencing, gate bias adjustment for quiescent current, and proper input/output harmonic filtering are required for stable Doherty operation.
This page synthesizes distributor pricing, drop-in alternatives, and design guidance drawn from the manufacturer datasheet and cross-reference sources, offering engineering context not duplicated on distributor product listings.
드롭인 대체품: MRF8HP21130HSR3 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
MRF8HP21130HR3
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MRF8P20140WHSR3
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MRF8S21200HR6
✅ 드롭인✓ 재고 있음
$62 / 개
데이터시트 보기 →MRF8HP21130HSR3 최대 정격 & 전기적 특성
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) |
| Part Number | MRF8HP21130HSR3 |
| Device Type | Lateral N-Channel RF Power MOSFET |
| Application Band | 2110 - 2170 MHz (W-CDMA / LTE) |
| Drain Voltage (VDD) | 28 V |
| Output Power (Average, W-CDMA / LTE) | 28 W |
| Power Gain (typ.) | 14 dB |
| Drain Current (test condition) | 360 mA |
| Operating Frequency (f) | 2.17 GHz (max in band) |
| Architecture | In-package Doherty (two-stage) |
| 패키지 / 케이스 | NI-780S-4 (air-cavity ceramic) |
| 장착 스타일 | Flange mount, screw-down |
| Bias Class | Class AB / Class C capable |
| Modulation Support | W-CDMA, LTE |
| RoHS | Compliant |
| Lead-Free | Yes |
| 동작 온도 | -40C to +150C (junction) |
| Datasheet Document | MRF8HP21130H datasheet (NXP) |
MRF8HP21130HSR3 핀 구성
| 핀 1 | RF Input / Gate — RF signal input to gate, internally matched to 50 ohm at the in-package Doherty input |
| 핀 2 | Gate Bias — Vgs bias connection for quiescent current adjustment |
| 핀 3 | Drain Bias — 28 V Vdd supply connection for the peaking amplifier leg |
| 핀 4 | Drain Bias (Main) — 28 V Vdd supply connection for the main / carrier amplifier leg |
| 핀 5 | RF Output / Drain — Combined Doherty RF output, internally matched to 50 ohm |
| 핀 FLANGE | Flange / Thermal — Mounting flange for bolt-down heatsink attachment; also serves as package ground |
DC 안전 동작 영역 (MRF8HP21130HSR3)
일반적인 애플리케이션
MRF8HP21130HSR3 적합 용도: 6 애플리케이션s: LTE Band 1 / Band 4 Macro-Cell Doherty Power Amplifier, W-CDMA 3G Base Station Final Stage, Small-Cell and Picocell LTE Infrastructure, Multi-Carrier GSM / EDGE Driver Stage, Distributed Antenna System (DAS) Hub Amplifier, Private LTE / CBRS Network Transmitter.
LTE Band 1 / Band 4 Macro-Cell Doherty Power Amplifier
The MRF8HP21130HSR3 fits LTE Band 1 (1920-1980 MHz uplink, 2110-2170 MHz downlink) and LTE Band 4 macro-cell final-stage Doherty PAs because its 2110-2170 MHz band, 28 W average, and 28 V bias are exactly aligned with the standard 3GPP downlink path. The integrated in-package two-stage Doherty combiner eliminates an external 90-degree hybrid, reducing PCB footprint by roughly 30% versus a discrete two-device Doherty. With 14 dB gain, designers can drive the device directly from a 50 mW-class pre-driver without an additional gain stage, simplifying the RF chain.
추천
W-CDMA 3G Base Station Final Stage
For legacy W-CDMA 3G base stations still in operation worldwide, the MRF8HP21130HSR3 provides 28 W average output power with high linearity for the 3GPP Rel-99 modulation format. The 28 V drain bias matches the standard -48 V telecom bus architecture, and the device's high gain (14 dB) relaxes driver-stage gain requirements. The NI-780S-4 air-cavity ceramic package delivers the thermal performance needed for continuous W-CDMA operation at high duty cycle. Designers migrating to LTE can reuse the same PCB footprint because the HSR3 pin-out is preserved.
추천
Small-Cell and Picocell LTE Infrastructure
In small-cell LTE picocells deployed at 2110-2170 MHz, the MRF8HP21130HSR3's compact in-package Doherty integration reduces the PA module area by approximately 30% versus a discrete design, enabling smaller outdoor enclosures. The 28 W average rating supports multi-sector pico sites covering up to several hundred meters radius. Operating efficiency of a properly biased Doherty implementation typically exceeds 40% at 8 dB back-off, reducing cooling needs in sealed outdoor enclosures where convective cooling is limited.
추천
Multi-Carrier GSM / EDGE Driver Stage
For multi-carrier GSM and EDGE base-station transmitters, the MRF8HP21130HSR3 operates reliably at 28 V with sufficient linearity for 8-PSK EDGE modulation when the bias is optimized for Class AB. The integrated Doherty configuration enables higher average efficiency under multi-carrier back-off conditions, an important parameter for cellular operators targeting OPEX reduction. The 14 dB gain reduces the chain length, lowering overall BOM cost for the transmitter subsystem.
추천
Distributed Antenna System (DAS) Hub Amplifier
Enterprise DAS hubs operating in the 2110-2170 MHz band can deploy the MRF8HP21130HSR3 as the master hub PA, where the in-package Doherty integration reduces heat dissipation in confined ceiling-mounted enclosures. The 28 W average rating supports multiple remote antenna branches through passive splitters, while the high gain (14 dB) allows the hub to feed long coaxial runs without intervening line drivers. The NI-780S-4 air-cavity package is mechanically compatible with the standard NXP RF power transistor heatsink ecosystem.
추천
Private LTE / CBRS Network Transmitter
For private LTE networks operating in shared or lightly licensed spectrum (such as CBRS in the US, where Band 48 is below this part's range but enterprise LTE Band 40 / Band 41 deployments can cross 2110-2170 MHz adjacent allocations), the MRF8HP21130HSR3 provides a production-ready 28 W Doherty amplifier in the same footprint as commercial telecom designs. The same device accelerates design-in timelines for industrial IoT, mining, and warehouse automation networks. The NXP reference designs enable reuse of evaluation boards for fast prototyping.
추천
추천 제품 요약
엔지니어링 참조 데이터: MRF8HP21130HSR3 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | MRF8HP21130HR3 | MRF8P20140WHSR3 | MRF8S21200HR6 |
|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | NI-780S-4 | NI-780S-4 - same | NI-780S-4 - same | NI-780S-4 - same |
| Frequency Band | 2110 - 2170 MHz | 2110 - 2170 MHz (same) | 1930 - 2025 MHz (different) | 2110 - 2170 MHz (same) |
| Drain Voltage | 28 V | 28 V (same) | 28 V (same) | 28 V (same) |
| Average Output Power | 28 W | 28 W (same) | 140 W (different) | 200 W (different) |
| In-Package Doherty | Yes (two-stage) | No (single-ended) | Yes (two-stage) | No (single-ended) |
| Modulation Support | W-CDMA, LTE | W-CDMA, LTE (same) | W-CDMA, LTE (same) | W-CDMA, LTE (same) |
주요 차별점
- Integrated in-package two-stage Doherty configuration (vs MRF8HP21130HR3)
- Targeted at the 2110-2170 MHz cellular downlink band (vs MRF8P20140WHSR3)
- 28 W average output suits medium-power final stages (vs MRF8S21200HR6)
설계 노트
The NI-780S-4 air-cavity ceramic package is designed for bolt-down flange mounting. Estimated: at 28 W average output, 6 W average dissipation, and a typical thermal compound interface (theta_JC ~ 0.4 C/W plus heatsink), the junction-to-heatsink temperature rise is roughly 30-40 C. Use a copper or aluminum heatsink with thermal compound, and torque the mounting screws to the manufacturer-specified value (typically 0.5-0.7 N-m for the NI-780 family) to avoid package cracking. Airflow of at least 1 m/s across the heatsink fins is recommended for continuous W-CDMA / LTE operation at full average power.
Use Rogers RO4350B or RO4003C low-loss substrate for the RF input and output matching networks, with a substrate thickness of 0.508 mm (20 mil) matching the NI-780S-4 lead pitch. FR-4 is acceptable for DC bias routing but is not recommended for the 2.1 GHz RF path because its loss tangent (0.020) is approximately 6-7x worse than RO4350B. Keep the input and output traces on the top metal layer with continuous ground stitching vias spaced at most lambda/20 to suppress parallel-plate modes. Decouple the 28 V drain bias with 100 nF, 10 nF, and 1 nF ceramic capacitors in parallel plus a 10 uF tantalum or aluminum-polymer bulk capacitor.
Maintain at least 5 mm keep-out of copper under the NI-780S-4 flange to preserve the package ground reference. Place the gate bias network close to the gate lead to prevent parasitic inductance from oscillating the device; a 10 ohm gate resistor in series with the bias network is recommended for UHF/VHF stability. For the integrated Doherty variant, follow the reference evaluation board layout exactly because the in-package combiner is tuned to specific input/output impedances - any deviation in matching network component values can degrade efficiency by 3-5 percentage points.
Do not exceed 32 V on the drain bias; the MRF8HP21130H datasheet specifies 28 V typical and 32 V absolute maximum. Exceeding this can cause drain-source breakdown. Gate bias should never be applied before drain bias, otherwise the device may draw excessive current; implement a sequencer that enables drain first, then ramps gate voltage to set quiescent current. Finally, do not solder directly to the NI-780S-4 leads with a standard iron - the leads are designed for clamp or screw terminal attachment, not PCB soldering.
규정 준수 정보
RoHS and lead-free status confirmed per the NXP MRF8HP21130H product page. AEC-Q100 not applicable because this is a telecom infrastructure RF power MOSFET, not an automotive-qualified part. Halogen-free status not stated in the public datasheet.
