MRF8P23080HSR5 - 80W RF MOSFET 2.3GHz W-CDMA/LTE | NXP
부품 번호: MRF8P23080HSR5 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $78.5 | $78.50 |
| 10 | $71.2 | $712.00 |
| 50 | $65.1 | $3,255.00 |
| 100 | $60.4 | $6,040.00 |
| 250 | $55.8 | $13,950.00 |
MRF8P23080HSR5 개요
An RF power MOSFET is a specialised discrete semiconductor that converts DC supply energy into a high-frequency RF output signal with gain and acceptable linearity. The MRF8P23080HSR5 belongs to the lateral N-Channel MOSFET family, optimised so that the carrier transit path sits parallel to the silicon surface, which minimises parasitic capacitances and improves high-frequency gain and efficiency compared with vertical-diffusion MOSFETs. It sits within the broader HV8 generation of NXP Airfast RF power devices.
Key features include 14.6 dB typical power gain, 50 V drain-to-source breakdown support with the recommended 28 V nominal operating drain supply, and operation from 2300 to 2400 MHz. The device is biased at low quiescent current for Class AB operation and is rated for W-CDMA and LTE downlink waveforms where high peak-to-average ratios must be handled without excessive gain compression.
The device uses NXP's seventh-generation Laterally Diffused Metal Oxide Semiconductor (LDMOS) process technology, which delivers high gain, high drain efficiency, and excellent thermal performance. The Airfast NI-780S-4L package provides a low-inductance copper-flanged ceramic body that simplifies PCB-to-flange mounting and improves thermal transfer to the system heatsink, while the internally matched input simplifies driver-stage design.
Typical applications include 4G LTE and W-CDMA base-station power amplifiers, small-cell and femtocell transmitters, and repeater/boosted-coverage infrastructure. It is also used in military and industrial RF amplifier modules that require broadband efficiency above 2 GHz.
When integrating this MOSFET, ensure that the drain supply rail incorporates proper RF decoupling and that the PCB thermal path provides a low thermal-resistance mounting interface to a heatsink or cold-plate. Designers should also bias the gate with a regulated negative or positive bias network that prevents thermal runaway and preserves the device's safe operating area.
This page synthesises distributor pricing, drop-in alternative guidance and practical thermal and layout notes that complement the manufacturer datasheet and accelerate part selection for 2.3-2.4 GHz RF power designs.
드롭인 대체품: MRF8P23080HSR5 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: MRF8P23080HSR5 (동일 폼 팩터 및 풋프린트) — 차이점: Mounting Type, Frequency Range, Lead-Free / RoHS, Manufacturer, Package / Case.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
MRF8P23080HSR3
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$65.1 / 개
데이터시트 보기 →MRF8P26080HSR5
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MRF8P20140WHSR3
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MRF8P23080HR5
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
MRF8VP23080HSR5
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
MRF8P23080HSR5 최대 정격 & 전기적 특성
| Manufacturer | NXP Semiconductors |
| Product Type | RF Power MOSFET (Lateral N-Channel) |
| Series | Airfast HV8 |
| Frequency Band | 2300 to 2400 MHz |
| Test Frequency | 2.3 GHz |
| Target Waveforms | W-CDMA, LTE |
| Average Output Power | 16 W |
| Peak Output Power | 80 W |
| Power Gain (typical) | 14.6 dB at 2.3 GHz |
| Drain-Source Voltage (Vds) Test Condition | 28 V |
| Drain Current (Id) Test Condition | 280 mA |
| 패키지 / 케이스 | NI-780S-4L |
| 실장 유형 | Chassis / Flange Mount |
| Operating Mode | Class AB |
| Technology | Laterally Diffused MOS (LDMOS) |
| Channel Polarity | N-Channel |
| Compliance | RoHS compliant per NXP product page |
MRF8P23080HSR5 핀 구성
| 핀 1 | GATE — Gate input, biased Class AB per datasheet |
| 핀 2 | DRAIN — Drain, 28 V nominal supply, RF output |
| 핀 3 | FLANGE / SOURCE — Source and thermal-mount flange (ground) |
안전 동작 영역 (DC Bias)
일반적인 애플리케이션
MRF8P23080HSR5 적합 용도: 6 애플리케이션s: 4G LTE Base-Station Power Amplifier (2.3-2.4 GHz), Small-Cell and Femtocell Transmitter, W-CDMA Node-B Power Amplifier, RF Repeater and Coverage-Extension Link, Industrial / Military RF Power Amplifier Module, Test-and-Measurement RF Amplifier Bench.
4G LTE Base-Station Power Amplifier (2.3-2.4 GHz)
The MRF8P23080HSR5 is well matched to the final stage of 4G LTE base-station power amplifiers operating in the 2300-2400 MHz band, where its 16 W average and 80 W peak output envelope align with macro-cell PA line-up budgets. Its 14.6 dB typical power gain at 2.3 GHz allows a clean two-stage driver chain using lower-power gain blocks. The Airfast HV8 LDMOS process delivers high drain efficiency at the high PAR of LTE downlink, reducing cooling requirements at the BTS rack. Operating from a 28 V drain rail, the device integrates with standard BTS bias and DPD linearisation loops, while the NI-780S-4L flange package provides a low-thermal-resistance mounting interface suitable for forced-air or cold-plate cooled PA drawers.
추천
Small-Cell and Femtocell Transmitter
Small-cell and femtocell transmitters in the 2300-2400 MHz TDD-LTE bands benefit from the MRF8P23080HSR5's compact form factor and integrated input matching. The 16 W average output comfortably drives distributed antenna systems and pico-cell coverage without a dedicated multi-stage driver chain, simplifying the bill of materials. Airfast HV8 LDMOS technology supports good linearity at the high peak-to-average ratios of LTE, allowing digital pre-distortion to push efficiency higher while staying inside the spectral-emission mask. The NI-780S-4L copper-flange package drops onto a small machined heatsink that fits inside sealed outdoor enclosures, an important advantage for street-level small-cell deployments that are thermally constrained.
추천
W-CDMA Node-B Power Amplifier
Within UMTS Node-B transmitter line-ups, the MRF8P23080HSR5 supplies 16 W average output across the 2300-2400 MHz 3GPP bands with W-CDMA waveforms, providing the linearity margin needed to meet adjacent-channel-leakage-ratio (ACLR) targets. Its 14.6 dB gain stage can drive directly from the front-end gain block while maintaining gain flatness within the band. The 28 V drain bias allows designers to reuse the standard BTS power-conversion rail instead of stepping down further. NXP's HV8 LDMOS process supports high ruggedness into VSWR mismatches, which is critical at the antenna interface where tower-top PIMs and isolator imperfections can subject the PA to reflected power in real-world deployments.
추천
RF Repeater and Coverage-Extension Link
Repeater and booster coverage links for the 2300-2400 MHz band can use the MRF8P23080HSR5 in the uplink or downlink amplification chain, where the 16 W average output provides the headroom needed to push through building penetration losses. Its high gain per stage reduces the depth of the cascaded amplifier chain, keeping group-delay variation and noise figure manageable. The NI-780S-4L package allows direct mounting to a remote-radio-head housing machined out of aluminium, eliminating thermal-management complexity. Designers can pair it with circulator protection and PIN-diode limiting to create a rugged outdoor unit that meets LTE emissions requirements.
추천
Industrial / Military RF Power Amplifier Module
Defence and industrial RF power amplifier modules targeting electronic-countermeasure, telemetry or jamming sub-bands near 2.3-2.4 GHz often repurpose the MRF8P23080HSR5 because its Airfast HV8 LDMOS die delivers high P1dB and ruggedness into VSWR. The 80 W peak capability covers pulsed-RF duty cycles typical in ECM and telemetry transmitters. Operating from a 28 V supply, the device integrates with MIL-grade power-conversion rails that already exist on most ruggedised platforms. The NI-780S-4L flange package is straightforward to integrate into the chassis-based RF modules used by system integrators, and the copper flange delivers low thermal resistance that supports the rugged environmental conditions of military platforms.
추천
Test-and-Measurement RF Amplifier Bench
Bench-top RF amplifier instruments used for compliance and production test of 2.3-2.4 GHz LTE devices can use the MRF8P23080HSR5 to provide the high drive levels needed for radiated-susceptibility and coverage-replication tests. Its stable gain and 16 W average output let test houses drive long cable runs, chamber antennas, and over-the-air reference devices without saturating. The 28 V bias is compatible with standard laboratory power supplies, simplifying bench-top integration. With proper heatsinking the device can be run at continuous CW in test mode, while the ruggedness margin handles the occasional load mismatch introduced by prototype antenna fixtures.
추천
추천 제품 요약
엔지니어링 참조 데이터: MRF8P23080HSR5 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | MRF8P23080HSR3 | MRF8P26080HSR5 | MRF8P20140WHSR3 | MRF8P23080HR5 | MRF8VP23080HSR5 |
|---|---|---|---|---|---|---|
| Package | NI-780S-4L (flange) | NI-780S-4L (flange) - same | NI-780S-4L (flange) - same | NI-780S-4L (flange) - same | NI-780S-4L (flange) - same | NI-780S-4L (flange) - same |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Frequency Band | 2300-2400 MHz | 2300-2400 MHz (same) | 2570-2620 MHz | 1930-1990 MHz | 2300-2400 MHz (same) | 2300-2400 MHz (same) |
| Average Output Power | 16 W | 16 W | 16 W | 28 W | 16 W | 16 W |
| Peak Output Power | 80 W | 80 W | 80 W | 140 W | 80 W | 80 W |
| Drain Supply (Vds) | 28 V | 28 V | 28 V | 28 V | 28 V | 28 V |
| Waveform Targets | W-CDMA / LTE | W-CDMA / LTE | W-CDMA / LTE | W-CDMA / LTE | W-CDMA / LTE | W-CDMA / LTE |
주요 차별점
- Matched at the native 2300-2400 MHz band (vs MRF8P26080HSR5)
- Lower Pout envelope for cost-efficient line-ups (vs MRF8P20140WHSR3)
- Compact 80 W HV8 device in the NI-780 family (vs MRF7S38040HSR3)
설계 노트
Mount the NI-780S-4L flange directly to a heatsink or chassis using a low-thermal-resistance interface material. Estimated: at 16 W average output, P1dB efficiency in the 45-50% range and quiescent losses suggest roughly 18-20 W total dissipation; keeping the junction below +150 C requires a heatsink temperature near +80 C, achievable with forced-air cooling or a copper spreader.
Keep RF-launch traces from the gate and drain pins as short as possible and provide a continuous ground reference on the top copper. The NI-780S-4L flange acts as the primary RF ground, so the screw-down pattern must maintain metal-to-metal contact across the flange perimeter to avoid slotline or parallel-plate modes that can detune the matching network.
Use a regulated 28 V drain supply capable of delivering peak surge current well beyond the DC bias. Decouple the drain rail locally with a high-Q broadband capacitor and a bulk tantalum or aluminium-poly capacitor; this prevents supply droop during the high-PAR peaks of LTE and protects the device from transient over-voltage events during antenna VSWR surges.
Avoid running the MRF8P23080HSR5 below its rated quiescent current on a 28 V rail - Class AB bias must remain within the datasheet window to preserve ruggedness and linearity. Also, do not 'borrow' the matching network from a different MRF8P variant without re-verifying load-pull data; the 2300-2400 MHz matching is unique to this part number and substituting MRF8P26080HSR5 or MRF8P20140WHSR3 matching designs will shift the optimum load-pull point.
규정 준수 정보
RoHS compliant per NXP product page as of 2026-10-16. Halogen-free status not explicitly listed in verified data - flagged as 'unknown'. AEC-Q100 is not applicable (this is an RF power MOSFET, not an automotive-qualified IC).
