MRF8S21200HSR6 vs MRF8S21200HR6 비교
다음의 상세 나란히 비교: MRF8S21200HSR6 제조: NXP Semiconductors 및 MRF8S21200HR6 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
NXP Semiconductors
MRF8S21200HR6 - 48W RF Power LDMOS MOSFET | NXP | LTE Base Station
MRF8S21200HR6 ✓ 활성사양 비교
| 파라미터 | MRF8S21200HSR6 | MRF8S21200HR6 |
|---|---|---|
| 브랜드 | NXP Semiconductors | NXP Semiconductors |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $96.75 | $62.00 |
| 트랜지스터 유형 | LDMOS, Dual N-Channel, Enhancement-Mode Lateral MOSFET | LDMOS (Dual), N-Channel Enhancement-Mode Lateral MOSFET |
| Frequency Band | 2110 MHz to 2170 MHz | — |
| Output Power (Avg, W-CDMA/LTE) | 48 W at 28 V | — |
| Power Gain | 18.1 dB | 18.1 dB |
| Test Voltage | 28 V | 28 V |
| Test Current (Quiescent) | 1.4 A | — |
| Minimum Breakdown Voltage (Drain-Source) | 65 V | — |
| Maximum Junction Temperature | 225 C | — |
| Mounting Configuration | Surface Mount (NI-1230HS ceramic package) | — |
| Application Class | Class AB, Class C (cellular base station modulation) | — |
| Peak Reflow Temperature | 260 C | — |
| Number of Elements / Configuration | Dual, Common Source, 2 Elements | — |
| Lead Free Status | Lead Free | — |
| Technology | Silicon LDMOS (lateral double-diffused MOSFET) | — |
| Target Modulation | W-CDMA, LTE, TD-LTE | — |
| Frequency | — | 2.11 GHz to 2.17 GHz (2110-2170 MHz) |
| Test Current | — | 1.4 A |
| Output Power (Average) | — | 48 W |
| Drain-Source Voltage (Max) | — | 65 V |
| Configuration | — | Common Source, 2 elements |
| Case Connection | — | Source |
| 실장 유형 | — | Surface Mount (NI-1230 ceramic flange) |
| 패키지 | — | NI-1230 |
| Application | — | W-CDMA, LTE base station power amplifiers |
| Class of Operation | — | Class AB, Class C |
| Surface Mount | — | Yes |
| RoHS 상태 | — | Compliant |