NRVBS260NT3G - 60V 2A Schottky Rectifier, SMB | onsemi
부품 번호: NRVBS260NT3G ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $0.4 | $0.40 |
| 10 | $0.28 | $2.80 |
| 100 | $0.18 | $18.00 |
| 500 | $0.16 | $80.00 |
| 1,000 | $0.1348 | $134.80 |
NRVBS260NT3G 개요
A Schottky rectifier is a semiconductor diode that uses a metal-semiconductor junction instead of a PN junction, eliminating minority-carrier charge storage and enabling switching speeds orders of magnitude faster than conventional silicon rectifiers. In the system hierarchy, Schottky rectifiers belong to the discrete semiconductor family, sit within the diodes category, and are commonly used as secondary-side rectifiers, OR-ing diodes, and reverse-polarity protection devices in switch-mode power supplies (SMPS), DC-DC converters, and motor drive circuits.
Key features include a low forward voltage drop of 630 mV at 2 A, a peak surge forward current rating suited for inductive-load switching transients, oxide-passivated epitaxial construction for stable leakage characteristics, and a metal overlay contact that improves thermal dissipation. The SMB package provides a compact surface-mount footprint with a J-lead termination that increases board-level reliability versus flat-lead SMB competitors.
Technical depth: the NRVBS260NT3G uses epitaxial Schottky barrier construction with oxide passivation to minimize reverse leakage at elevated temperatures and to stabilize the barrier height across production lots. The 60 V rating provides substantial design margin for 12 V and 24 V automotive/industrial buses, while the 2 A continuous rating is well-matched to point-of-load rails, free-wheeling diode positions in buck/boost converters, and reverse-polarity protection in distributed power architectures.
Typical applications include low-voltage high-frequency switching power supplies, free-wheeling diodes across inductive loads such as solenoids and relays, polarity protection in automotive and industrial subsystems, and OR-ing diodes in redundant power systems. Designers favor this part where switching losses must be minimized and PCB area is constrained.
When designing with this device, ensure the heatsinking path is adequate - at 2 A forward current and 630 mV drop the device dissipates about 1.26 W. The SMB package's exposed metal pad must be soldered to sufficient copper area on the PCB to maintain junction temperature within ratings.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
드롭인 대체품: NRVBS260NT3G — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: NRVBS260NT3G (동일 폼 팩터 및 풋프린트) — 차이점: Package, MSL Level, RoHS Status, Diode Type, Polarity.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
NRVBS260T3G
✅ 드롭인✓ 재고 있음
$0.15 / 개
데이터시트 보기 →MBRS260T3G
✅ 드롭인✓ 재고 있음
$0.15 / 개
데이터시트 보기 →MBRS260NT3G
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
SS26-E3/52T
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
B260-13-F
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
NRVBS260NT3G 최대 정격 & 전기적 특성
| Manufacturer | onsemi |
| Product Type | Schottky Power Rectifier |
| Peak Repetitive Reverse Voltage (VRRM) | 60 V |
| Average Rectified Forward Current (IF(AV)) | 2 A |
| Forward Voltage Drop (VF) at 2 A | 630 mV |
| 동작 접합 온도 범위 | -55 C to +150 C (est. industry-standard for SMB Schottky) |
| 패키지 | SMB (DO-214AA) |
| 실장 유형 | Surface Mount |
| Construction | Epitaxial with oxide passivation and metal overlay contact |
| Configuration | Single diode |
| Polarity | Cathode band |
| MSL 레벨 | 1 (per third-party listing) |
| RoHS 상태 | Compliant (ROHS3) |
| REACH Status | Unaffected (per third-party listing) |
NRVBS260NT3G 핀 구성
| 핀 1 | Anode — Anode terminal (positive), unmarked side of SMB package |
| 핀 2 | Cathode — Cathode terminal (negative), identified by cathode band on package body |
안전 동작 영역 - Forward Current vs Forward Voltage
일반적인 애플리케이션
NRVBS260NT3G 적합 용도: 6 애플리케이션s: Low-Voltage High-Frequency Switching Power Supplies, Free-Wheeling Diode Across Inductive Loads, Reverse-Polarity Protection in 12V/24V Systems, OR-ing Diodes in Redundant Power Systems, Polarity Protection for USB and Low-Voltage DC Ports, DC Motor Commutation and Clamping.
Low-Voltage High-Frequency Switching Power Supplies
The NRVBS260NT3G's 60 V VRRM rating, 630 mV VF at 2 A, and Schottky barrier construction (no minority-carrier charge storage) make it a strong fit for secondary-side rectification in low-voltage high-frequency SMPS. Placed on the secondary side of an isolated flyback or forward converter operating at 100-500 kHz, it eliminates reverse-recovery losses that would otherwise degrade efficiency at high switching frequency. The SMB package's metal overlay contact aids thermal dissipation, allowing sustained 2 A operation with proper copper landing. Compared to a 1N5400 silicon rectifier, the NRVBS260NT3G cuts switching loss dramatically at frequencies above 50 kHz.
추천
Free-Wheeling Diode Across Inductive Loads
The NRVBS260NT3G is ideally suited as a free-wheeling (snubber) diode across relays, solenoids, motors, and other inductive loads where stored magnetic energy must be dissipated safely when the switch opens. Its 60 V reverse voltage rating provides ample headroom for the inductive kick of 12 V and 24 V coils, and its 630 mV forward drop keeps recirculation losses low. According to onsemi, the epitaxial Schottky construction handles the repetitive reverse-recovery stress seen in PWM-driven inductive loads without the soft-recovery tail of PN-junction diodes, reducing EMI and extending MOSFET switch life.
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Reverse-Polarity Protection in 12V/24V Systems
Reverse-polarity protection is a common automotive and industrial requirement, and the NRVBS260NT3G with 60 V VRRM and 2 A IF(AV) is well matched to 12 V and 24 V battery bus protection. Placed in series with the load (or in parallel with a fuse for low-loss protection), the diode blocks reverse-current flow when the input polarity is inverted, with only 630 mV conduction drop versus the hundreds of millivolts of a P-MOSFET solution. The AEC-Q 'N' suffix qualification supports use in automotive body and chassis ECUs where voltage transients and reverse-battery events are routine.
추천
OR-ing Diodes in Redundant Power Systems
In redundant power architectures (N+1 server supplies, telecom -48 V distribution, industrial UPS subsystems), the NRVBS260NT3G serves as an OR-ing diode that isolates two parallel power sources while preventing back-feeding. With 2 A IF(AV) and 630 mV VF, it can carry substantial load current with manageable conduction loss (about 1.26 W at full load), and the SMB package's compact footprint supports dense PCB layouts. Designers should verify that the upstream supply tolerances stay below the diode's 60 V reverse rating even during load-dump or hot-swap transients.
추천
Polarity Protection for USB and Low-Voltage DC Ports
The NRVBS260NT3G's 60 V VRRM, 2 A continuous current rating, and SMB surface-mount footprint suit USB-PD, 5 V/12 V/20 V accessory ports, and other low-voltage DC connector protection. Placed at the input of a downstream buck regulator, it blocks reverse-polarity hookup at the connector while its 630 mV drop only modestly reduces the budget available to the downstream converter. Compared to a P-MOSFET reverse-polarity solution, the diode approach is simpler, lower cost, and free of gate-drive complexity, at the expense of slightly higher conduction loss.
추천
DC Motor Commutation and Clamping
Brushed DC motor commutation creates repetitive inductive transients that demand a robust free-wheeling diode across each motor terminal. The NRVBS260NT3G's 60 V reverse rating handles the back-EMF of small 12 V and 24 V brushed motors, and its 2 A continuous rating suits fractional-horsepower motion control, robotic actuators, and small pump drives. According to onsemi, the Schottky barrier construction eliminates the reverse-recovery tail that would otherwise generate EMI and reduce the effective torque at high PWM rates.
추천
추천 제품 요약
엔지니어링 참조 데이터: NRVBS260NT3G — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | NRVBS260T3G | MBRS260T3G | MBRS260NT3G | SS26-E3/52T | B260-13-F |
|---|---|---|---|---|---|---|
| Brand | onsemi | onsemi | onsemi | onsemi | Vishay Intertechnology | Diodes Incorporated |
| Package | SMB (DO-214AA) | SMB (DO-214AA) - same | SMB (DO-214AA) - same | SMB (DO-214AA) - same | SMB (DO-214AA) - same | SMB (DO-214AA) - same |
| Peak Repetitive Reverse Voltage (VRRM) | 60 V | 60 V | 60 V | 60 V | 60 V | 60 V |
| Average Rectified Forward Current (IF(AV)) | 2 A | 2 A | 2 A | 2 A | 2 A | 2 A |
| Forward Voltage Drop (VF) at 2 A | 630 mV | 630 mV | 630 mV | 630 mV | ~700 mV (~11% higher) | ~700 mV (~11% higher) |
| Automotive Grade (AEC-Q) | Yes (N suffix) | No (commercial) | No (commercial) | Yes (N suffix) | No (commercial) | No (commercial) |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | Compliant | Compliant |
| Unit Price (1k reel, as of 2026-10-09) | ~$0.13 - $0.40 | ~$0.13 - $0.40 | ~$0.13 - $0.40 | ~$0.13 - $0.40 | ~$0.15 - $0.45 | ~$0.10 - $0.35 |
주요 차별점
- AEC-Q automotive screening (N-suffix) (vs NRVBS260T3G)
- Lower forward voltage drop than cross-brand equivalents (vs SS26-E3/52T (Vishay) and B260-13-F (Diodes Inc.))
- Original part-number family with broad second-source coverage (vs MBRS260T3G)
설계 노트
Estimated: At IF=2 A and VF=630 mV, the NRVBS260NT3G dissipates approximately 1.26 W. The SMB package has typical thermal resistance theta_JA ~50-60 C/W on a 1 oz copper 1 square inch pad (industry-standard estimate; verify against the onsemi MBRS260T3 datasheet thermal curve for your exact PCB). Without adequate copper landing or external heatsinking, junction temperature may exceed 150 C at elevated ambient - design the footprint for at least 0.5 square inch of copper to keep Tj below 125 C in 70 C ambient operation.
Per onsemi SMB package guidelines, the cathode band marks polarity - orient the diode so the cathode faces the load side for proper free-wheeling or reverse-polarity protection service. Use a generous copper landing pattern with thermal vias under the cathode terminal to pull heat away from the die. Avoid placing the diode near heat sources; route high-current traces directly to the SMB J-leads with minimum trace length to reduce parasitic inductance that can ring during reverse recovery.
Do not exceed the 60 V VRRM rating - inductive kick from relays, solenoids, or motor windings can easily exceed 60 V during switch-off events; add an RC snubber or TVS clamp if the worst-case inductive spike exceeds the rating. Avoid paralleling multiple NRVBS260NT3G diodes without individual source resistors or other balancing - Schottky forward-voltage spread is small but sufficient to cause current hogging. Do not use the part in circuits with reverse voltages exceeding 60 V even briefly; permanent damage will result.
규정 준수 정보
ROHS3 compliant and REACH unaffected per third-party PartGenie listing. AEC-Q automotive qualified per onsemi 'N' suffix designation in part number. MSL Level 1 per third-party listing.