SI1553DL-T1-GE3 vs BSD235CH6327XTSA1 비교

다음의 상세 나란히 비교: SI1553DL-T1-GE3 제조: Vishay Intertechnology 및 BSD235CH6327XTSA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Vishay Intertechnology
SI1553DL-T1-GE3 SI1553DL-T1-GE3 - Complementary 20V MOSFET Array | Vishay

SI1553DL-T1-GE3 - Complementary 20V MOSFET Array | Vishay

SI1553DL-T1-GE3 ✓ 활성

사양 비교

파라미터 SI1553DL-T1-GE3 BSD235CH6327XTSA1
브랜드 Vishay Intertechnology Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.14 $0.12
Manufacturer Vishay Siliconix Infineon Technologies
Part Number SI1553DL-T1-GE3 —
Transistor Polarity Complementary N and P Channel —
Number of Channels 2 (1 N-channel + 1 P-channel) —
Drain-Source Voltage VDS (max) 20 V —
Continuous Drain Current ID - N-Channel 700 mA —
Continuous Drain Current ID - P-Channel 500 mA —
On-Resistance RDS(on) - N-Channel 0.32 ohm (typ at VGS = 4.5 V) —
On-Resistance RDS(on) - P-Channel [DATA_NEEDED: P-channel RDS(on) value] —
Gate-Source Threshold VGS(th) 2.5 V (max) —
Gate-Source Voltage VGS (max) [DATA_NEEDED: +/- VGS absolute maximum] —
Power Dissipation PD 340 mW —
동작 온도 범위 -55C to +150C (TJ) -55 °C to +150 °C (junction)
패키지 SC-70-6 / SOT-363-6 —
실장 유형 Surface Mount Surface Mount
Process Technology TrenchFET —
Termination Finish Lead-free (Pb-free), Halogen-free —
RoHS Compliance Compliant per Directive 2002/95/EC —
할로겐 프리 Yes (per IEC 61249-2-21) —
MSL 레벨 [DATA_NEEDED: MSL rating] 1
Part Family — OptiMOS™
Configuration — N+P complementary dual MOSFET
Drain-to-Source Voltage (VDS) — 20 V
N-Channel Continuous Drain Current (ID) — 950 mA
P-Channel Continuous Drain Current (ID) — 530 mA (negative polarity)
Total Power Dissipation (Ptot) — 500 mW
Package Type — PG-SOT363-6-1 (SOT-363, 6-pin)
Technology — OptiMOS™ low-voltage
Polarity — N-channel + P-channel
Channel Mode — Enhancement
RoHS 상태 — Compliant (lead-free)
핀 수 — 6

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