SI1553DL-T1-GE3 vs BSD235CH6327XTSA1 Comparação
Comparação detalhada lado a lado de SI1553DL-T1-GE3 por Vishay Intertechnology e BSD235CH6327XTSA1 por Infineon. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Vishay Intertechnology
SI1553DL-T1-GE3 - Complementary 20V MOSFET Array | Vishay
SI1553DL-T1-GE3 ✓ AtivoInfineon
BSD235CH6327XTSA1 - 20V Complementary N+P MOSFET | Infineon OptiMOS™
BSD235CH6327XTSA1 ✓ AtivoComparação de especificações
| Parâmetro | SI1553DL-T1-GE3 | BSD235CH6327XTSA1 |
|---|---|---|
| Marca | Vishay Intertechnology | Infineon |
| Categoria | MOSFETs | MOSFETs |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $0,14 | $0,12 |
| Manufacturer | Vishay Siliconix | Infineon Technologies |
| Part Number | SI1553DL-T1-GE3 | — |
| Transistor Polarity | Complementary N and P Channel | — |
| Number of Channels | 2 (1 N-channel + 1 P-channel) | — |
| Drain-Source Voltage VDS (max) | 20 V | — |
| Continuous Drain Current ID - N-Channel | 700 mA | — |
| Continuous Drain Current ID - P-Channel | 500 mA | — |
| On-Resistance RDS(on) - N-Channel | 0.32 ohm (typ at VGS = 4.5 V) | — |
| On-Resistance RDS(on) - P-Channel | [DATA_NEEDED: P-channel RDS(on) value] | — |
| Gate-Source Threshold VGS(th) | 2.5 V (max) | — |
| Gate-Source Voltage VGS (max) | [DATA_NEEDED: +/- VGS absolute maximum] | — |
| Power Dissipation PD | 340 mW | — |
| Faixa de temperatura de operação | -55C to +150C (TJ) | -55 °C to +150 °C (junction) |
| Encapsulamento | SC-70-6 / SOT-363-6 | — |
| Tipo de montagem | Surface Mount | Surface Mount |
| Process Technology | TrenchFET | — |
| Termination Finish | Lead-free (Pb-free), Halogen-free | — |
| RoHS Compliance | Compliant per Directive 2002/95/EC | — |
| Livre de halogênio | Yes (per IEC 61249-2-21) | — |
| Nível MSL | [DATA_NEEDED: MSL rating] | 1 |
| Part Family | — | OptiMOS™ |
| Configuration | — | N+P complementary dual MOSFET |
| Drain-to-Source Voltage (VDS) | — | 20 V |
| N-Channel Continuous Drain Current (ID) | — | 950 mA |
| P-Channel Continuous Drain Current (ID) | — | 530 mA (negative polarity) |
| Total Power Dissipation (Ptot) | — | 500 mW |
| Package Type | — | PG-SOT363-6-1 (SOT-363, 6-pin) |
| Technology | — | OptiMOS™ low-voltage |
| Polarity | — | N-channel + P-channel |
| Channel Mode | — | Enhancement |
| Status RoHS | — | Compliant (lead-free) |
| Contagem de pinos | — | 6 |