2ED21084S06JXUMA1 - 650V 0.7A Half-Bridge Gate Driver | Infineon
부품 번호: 2ED21084S06JXUMA1 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $1.04 | $1.04 |
| 10 | $0.95 | $9.50 |
| 100 | $0.82 | $82.00 |
| 500 | $0.71 | $355.00 |
| 1,000 | $0.63 | $630.00 |
| 3,000 | $0.55 | $1,650.00 |
2ED21084S06JXUMA1 개요
A half-bridge gate driver is a power-management IC that translates low-power PWM logic signals from a microcontroller into the high-current drive required to switch the gate of a half-bridge MOSFET or IGBT stage. The gate driver sits in the signal chain between the digital controller and the power switches, providing level shifting, bootstrap high-side drive, and short dead-time control. In the broader hierarchy, a gate driver belongs to power management ICs -> MOSFET/IGBT drivers -> half-bridge drivers -> level-shift gate drivers.
Key features of the 2ED21084S06JXUMA1 include 650 V high-side offset voltage, integrated bootstrap diode that eliminates an external discrete component, undervoltage lockout (UVLO) for both VCC and VBS rails, and matched propagation delays between the high-side and low-side channels for predictable dead-time behavior. The PG-DSO-14-49 wide-body SOIC package provides 3.5 mm creepage distance and supports high-side voltages up to 650 V, simplifying PCB layout in offline and motor-drive applications.
The driver uses a ground-referenced low-side channel and a floating high-side channel with internal level shifters and a bootstrap supply structure. Source current of 0.29 A and sink current of 0.7 A allow direct drive of small-to-medium IGBTs and 600 V MOSFETs without an external buffer stage, while 100 ns/35 ns rise/fall propagation delays enable switching frequencies above 20 kHz.
Typical applications include variable-frequency motor drives, solar micro-inverters, switch-mode power supplies, induction-cooking hobs, and D-class audio amplifiers where a half-bridge topology is required. The integrated bootstrap diode reduces BOM count and PCB area in space-constrained designs.
When designing with this part, place a 1 uF ceramic bypass capacitor directly on the VCC pin and a 1 uF to 4.7 uF bootstrap capacitor between VB and VS to ensure clean high-side supply under all PWM duty cycles. Verify dead-time in the MCU firmware to avoid cross-conduction; this driver does not include built-in dead-time generation.
This page synthesizes distributor pricing, parametric alternatives, and practical design notes not found in the manufacturer datasheet alone.
드롭인 대체품: 2ED21084S06JXUMA1 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: 2ED21084S06JXUMA1 (동일 폼 팩터 및 풋프린트) — 차이점: Package, RoHS Status, MSL Level, Operating Temperature, Function.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
2ED21064S06JXUMA1
✅ 드롭인✓ 재고 있음
$0.85 / 개
데이터시트 보기 →2ED2182S06FXUMA1
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
IRS2110SPBF
✅ 드롭인✓ 재고 있음
$0.72 / 개
데이터시트 보기 →IRS2110STRPBF
✅ 드롭인✓ 재고 있음
$1.42 / 개
데이터시트 보기 →2ED21084S06JXUMA1 최대 정격 & 전기적 특성
| 기능 | Half-bridge gate driver |
| 토폴로지 | Half-bridge (high-side + low-side) |
| High-side Offset Voltage (max) | 650 V |
| VCC Supply Voltage | 10 V to 20 V |
| Source Current (typical) | 0.29 A |
| Sink Current (typical) | 0.7 A |
| Propagation Delay Rise (typical) | 100 ns |
| Propagation Delay Fall (typical) | 35 ns |
| Input Logic | Non-inverting (HIN/LIN) |
| Bootstrap Diode | Integrated |
| 동작 온도 | -40C to +125C |
| 패키지 | PG-DSO-14-49 (14-pin wide-body SOIC) |
| 실장 유형 | Surface Mount |
| MSL 레벨 | 3 |
| RoHS 상태 | Compliant |
2ED21084S06JXUMA1 핀 구성
| 핀 1 | VCC — Low-side and logic supply voltage (10 V to 20 V) |
| 핀 2 | HIN — High-side logic input (non-inverting) |
| 핀 3 | LIN — Low-side logic input (non-inverting) |
| 핀 4 | GND — Ground reference |
| 핀 5 | LO — Low-side gate drive output |
| 핀 6 | VS — High-side floating supply return |
| 핀 7 | HO — High-side gate drive output |
| 핀 8 | VB — High-side floating supply (bootstrap) |
| 핀 9 | NC — Not connected (per datasheet) |
| 핀 10 | NC — Not connected (per datasheet) |
| 핀 11 | NC — Not connected (per datasheet) |
| 핀 12 | NC — Not connected (per datasheet) |
| 핀 13 | NC — Not connected (per datasheet) |
| 핀 14 | NC — Not connected (per datasheet) |
일반적인 애플리케이션
2ED21084S06JXUMA1 적합 용도: 7 애플리케이션s: Variable-Frequency Motor Drives, Solar Micro-Inverters, Switch-Mode Power Supplies (SMPS), Induction Cooking Hobs, D-Class Audio Amplifiers, Industrial Welding Inverters, Uninterruptible Power Supplies (UPS).
Variable-Frequency Motor Drives
The 2ED21084S06JXUMA1 fits variable-frequency motor drives because its 650 V high-side offset rating comfortably covers 400 V to 480 V AC-fed bus rails after rectification, and its 0.7 A sink current drives 600 V IGBT modules directly. Placed between the MCU PWM outputs and the half-bridge IGBT stage, the integrated bootstrap diode eliminates the discrete high-side diode, reducing BOM and PCB area. Compared to optocoupler-based drives, this driver offers 100 ns propagation delay rise enabling switching frequencies above 20 kHz for quiet motor operation, with matched channel delays for predictable dead-time control in the MCU firmware.
추천
Solar Micro-Inverters
The 2ED21084S06JXUMA1 is well suited for solar micro-inverter half-bridge stages where compact PCB footprint and high efficiency are mandatory. Its 650 V rating provides adequate margin over 400 V maximum PV bus voltage, and the integrated bootstrap diode simplifies the high-side supply network in space-constrained micro-inverter enclosures. Used between the controller and 600 V MOSFET switches, the 0.29 A source current charges MOSFET gates efficiently while 0.7 A sink current achieves fast turn-off. The wide-body PG-DSO-14-49 package supports high-voltage PCB creepage required by IEC 62109 solar inverter safety standards.
추천
Switch-Mode Power Supplies (SMPS)
The 2ED21084S06JXUMA1 is ideal for half-bridge and full-bridge SMPS topologies in industrial power supplies. With 650 V high-side capability and 0.7 A sink current, it directly drives 600 V MOSFETs in 380 V to 400 V rectified bus applications. Its 100 ns rise / 35 ns fall propagation delays support hard-switched half-bridge converters at 50 kHz to 200 kHz switching frequencies. The integrated bootstrap diode and matched channel delays simplify LLC and phase-shifted full-bridge designs where dead-time accuracy is critical for efficiency. Non-inverting logic inputs interface directly with digital PFC controllers and DSP-based controllers.
추천
Induction Cooking Hobs
The 2ED21084S06JXUMA1 suits induction cooking hob half-bridge resonant converters where high switching frequency (50 kHz to 100 kHz) and 600 V blocking are mandatory. Its matched channel delays and integrated bootstrap diode reduce component count on the cooktop PCB, while the 0.7 A sink current drives IGBTs capable of multi-kilowatt pan heating. According to the Infineon datasheet, the wide-body 14-pin SOIC package provides 3.5 mm creepage distance supporting high-side voltages up to 650 V with low EMI leakage. Non-inverting inputs interface directly with digital controllers implementing soft-start and pan-detection algorithms.
추천
D-Class Audio Amplifiers
The 2ED21084S06JXUMA1 fits D-class (Class-D) audio amplifier output stages where half-bridge topology drives the LC low-pass filter directly into the speaker. Its 100 ns rise / 35 ns fall propagation delays enable PWM switching frequencies above 250 kHz, well above the audio band, while the integrated bootstrap diode shrinks the BOM in compact consumer amplifiers. The 650 V rating supports universal-line powered designs. Matched channel delays reduce dead-time distortion, improving THD+N performance critical for high-fidelity audio reproduction. Non-inverting HIN/LIN inputs accept standard PWM from Class-D modulator DSPs.
추천
Industrial Welding Inverters
The 2ED21084S06JXUMA1 is suitable for compact industrial welding inverter half-bridge stages where high peak current capability and 650 V blocking are required. Its 0.7 A sink current drives welding-grade IGBTs efficiently, while the integrated bootstrap diode simplifies high-side supply in the harsh EMI environment of welding equipment. The matched channel delays support precise dead-time control for welding waveform shaping. According to the Infineon datasheet, the device's -40C to +125C operating range covers the wide thermal excursions typical of portable welding machines. Surface-mount packaging supports automated SMT assembly in volume production.
추천
Uninterruptible Power Supplies (UPS)
The 2ED21084S06JXUMA1 fits UPS inverter stages where reliable 650 V half-bridge switching is required for battery-to-AC conversion. Its matched channel delays support zero-voltage-switching (ZVS) phase-shifted full-bridge topologies common in high-efficiency UPS designs, while the integrated bootstrap diode reduces component count on the inverter PCB. The 0.7 A sink current drives 600 V MOSFETs at the multi-kilowatt power levels required for rack-mounted UPS. The wide-body SOIC package provides the creepage distance required by IEC 62040 UPS safety standards.
추천
추천 제품 요약
엔지니어링 참조 데이터: 2ED21084S06JXUMA1 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | 2ED21064S06JXUMA1 | 2ED2182S06FXUMA1 | IRS2110SPBF | IRS2110STRPBF |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-DSO-14-49 (SOIC-14 wide-body) | PG-DSO-14-49 (SOIC-14 wide-body) | DSO-14 | SOIC-14 | SOIC-14 |
| High-side Offset Voltage (max) | 650 V | 650 V | 650 V | 600 V | 600 V |
| Source Current (typical) | 0.29 A | 0.29 A | 0.36 A | 0.12 A | 0.12 A |
| Sink Current (typical) | 0.7 A | 0.7 A | 0.7 A | 0.42 A | 0.42 A |
| Propagation Delay Rise | 100 ns | 100 ns | 120 ns | 110 ns | 110 ns |
| Propagation Delay Fall | 35 ns | 35 ns | 40 ns | 60 ns | 60 ns |
| Integrated Bootstrap Diode | Yes | Yes | Yes | No (external required) | No (external required) |
| Input Logic | Non-inverting | Non-inverting | Non-inverting | Non-inverting | Non-inverting |
| VCC Supply Range | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V |
주요 차별점
- Integrated bootstrap diode eliminates external discrete (vs IRS2110SPBF)
- 650 V rating exceeds IRS2110 family 600 V (vs IRS2110SPBF / IRS2110STRPBF)
- Higher sink current for faster MOSFET turn-off (vs IRS2110SPBF)
- Matched propagation delays for predictable dead-time (vs 2ED2182S06FXUMA1)
설계 노트
Place a 1 uF low-ESR ceramic bypass capacitor directly between VCC (pin 1) and GND (pin 4) within 5 mm of the IC pins to suppress supply ringing caused by high-side level-shift transients. Add a 100 nF ceramic in parallel for high-frequency decoupling. For the bootstrap supply, use a 1 uF to 4.7 uF ceramic capacitor between VB (pin 8) and VS (pin 6); the integrated bootstrap diode charges this capacitor on every low-side turn-on. Insufficient bootstrap capacitance causes high-side UVLO trips and PWM distortion at high duty cycles above 90%.
Estimated: at 100 kHz switching with 30 nC gate charge MOSFETs, gate-driver power dissipation is approximately P = VCC x Qg x fsw = 15 V x 30 nC x 100 kHz = 0.045 W per channel, well within the PG-DSO-14-49's 100+ C/W theta_JA capability. However, in high-side switching the level-shift quiescent draw adds 1 mW to 5 mW. The wide-body SOIC provides adequate copper-pour heat dissipation without an external heatsink for typical half-bridge designs. Verify junction temperature using the standard Pdiss x theta_JA + Tambient calculation against your switching frequency and MOSFET Qg.
Route the HIN/LIN PWM traces as short, direct microstrip lines over a continuous ground plane; keep them away from the HO/LO switching nodes to avoid capacitive coupling that injects noise into the logic inputs. The PG-DSO-14-49 wide-body package provides 3.5 mm creepage between high-side pins (HO, VB, VS) and low-side pins (VCC, GND, LO); preserve this clearance on the PCB by routing high-side traces on the top side of a cut-out area or by adding slot in the PCB between the high-side and low-side copper pours. Star-ground the GND pin back to the controller ground rather than daisy-chaining through the power-stage ground.
Do not exceed the VS transient rating of -5 V; high dv/dt switching nodes can pull VS below ground during turn-off transients. Add a 5.1 V TVS or Schottky diode between VS and GND if the PCB layout has long VS-to-switch-node traces. Also verify that VCC never drops below the UVLO threshold during startup; a soft-start RC ramp on VCC avoids false UVLO trips. Per the Infineon datasheet, this driver does NOT include built-in dead-time generation - the MCU firmware must enforce minimum dead-time (typically 200 ns to 500 ns) to prevent half-bridge cross-conduction.
Place the gate-drive resistors (typically 10 ohm to 33 ohm) within 5 mm of the HO and LO pins to dampen parasitic trace inductance that causes gate ringing and dv/dt-induced MOSFET turn-on. Use separate gate-drive resistor return paths back to the driver GND and VS pins respectively, rather than sharing the power-stage source-inductor return path. For high-frequency designs above 100 kHz, consider using a 4-layer PCB with dedicated ground and VCC planes under the driver to minimize supply inductance and reduce EMI emissions.
규정 준수 정보
RoHS compliant per Infineon product page. Not AEC-Q100 qualified - this part targets industrial and consumer power applications rather than automotive. MSL-3 moisture sensitivity per JEDEC J-STD-020.
