IRS2110STRPBF - 500V High/Low-Side Gate Driver | Infineon
MPN: IRS2110STRPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $3.25 | $3.25 |
| 10 | $2.86 | $28.60 |
| 100 | $2.1 | $210.00 |
| 500 | $1.68 | $840.00 |
| 1,000 | $1.42 | $1,420.00 |
IRS2110STRPBF Overview
A half-bridge gate driver is a power-management IC that translates low-power PWM signals from a controller into the high-current, high-voltage drive required to switch the gate of a high-side or low-side power MOSFET or IGBT in a half-bridge or full-bridge power stage. Within the system hierarchy, this function sits between the digital control IC and the power switches, forming part of the broader gate-driver class, which itself belongs to the power-management integrated circuit family used in switch-mode power supplies, motor drives, and lighting ballasts.
Key features of the IRS2110STRPBF include a 500 V maximum offset voltage, 2.5 A typical source and sink gate-drive current, a 30 ns typical propagation delay for ton/toff, an integrated bootstrap diode that eliminates an external discrete part, and an active-low shutdown input that forces both outputs low. The SOIC-16 Wide-Body package offers a large die-attach paddle, supporting reliable thermal performance at switching frequencies above 100 kHz.
Proprietary HVIC and latch-immune CMOS technologies enable ruggedized monolithic construction that is tolerant to negative transient voltages and dV/dt noise on the switching node. The high-side channel is implemented as a floating bootstrap structure, so it can operate up to 500 V above the low-side return, making the part suitable for offline and motor-drive applications where the switching node swings between the rectified mains and ground.
Typical applications include three-phase motor drives for industrial pumps and fans, half-bridge and full-bridge converters for switch-mode power supplies, electronic ballasts for fluorescent and HID lighting, and solenoid or actuator drivers in 12 V to 400 V automotive and industrial systems. The wide VCC range also supports battery-powered 48 V to 400 V bus architectures.
When designing with this part, place the bootstrap capacitor (typically 0.1 Β΅F to 1 Β΅F low-ESR ceramic) close to the VB and VS pins, and ensure the high-side return (VS) is connected to the source of the high-side switch. A VCC bypass of at least 0.1 Β΅F plus a 1 Β΅F bulk is recommended to suppress switching noise.
This page synthesizes distributor pricing, drop-in half-bridge driver alternatives, and practical HVIC layout notes not found in the manufacturer datasheet alone.
Drop-in alternatives for IRS2110STRPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IRS2110STRPBF (same form factor and footprint) β differing in Package, MSL Level, Input Logic Compatibility, Lead-Free / RoHS, Logic Input Compatibility.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IR2110STRPBF
β Drop-Inπ Reference alternative (not in catalog)
IR2110SPBF
β Drop-Inβ In Stock
$1.98 / Unit
View Datasheet βIRS2113STRPBF
β Drop-Inπ Reference alternative (not in catalog)
IRS2112STRPBF
β Drop-Inπ Reference alternative (not in catalog)
IRS2118SPBF
β Drop-Inπ Reference alternative (not in catalog)
IRS21867STRPBF
β Drop-Inβ In Stock
$1.55 / Unit
View Datasheet βIRS2110STRPBF Maximum Ratings & Electrical Characteristics
| Driver Configuration | Half-Bridge |
| Number of Drivers | 2 (High-Side and Low-Side) |
| Number of Outputs | 2 |
| Output Type | Non-Inverting |
| Maximum Offset Voltage | 500 V |
| Gate Drive Supply (VCC) | 10 V to 20 V |
| Source/Sink Output Current (typ.) | 2.5 A / 2.5 A |
| Propagation Delay ton/toff (typ.) | 30 ns / 30 ns |
| Rise/Fall Time (typ.) | 17 ns / 25 ns |
| Logic Input Compatibility | CMOS/TTL compatible (3.3 V logic compatible) |
| Bootstrap Diode | Integrated |
| Shutdown Input | Active-low, forces both outputs low |
| Undervoltage Lockout | Yes (VCC and VBS) |
| Operating Temperature | -40 C to +150 C |
| Package | 16-pin SOIC Wide-Body (SOIC-WB), Tape and Reel |
| Mounting Type | Surface Mount |
| MSL Level | 3 (168 hours) |
| Lead-Free / RoHS | Lead-Free, RoHS Compliant |
IRS2110STRPBF Pin Configuration
| Pin 1 | VDD β Logic supply voltage |
| Pin 2 | HIN β Logic input for high-side gate driver (active high) |
| Pin 3 | LIN β Logic input for low-side gate driver (active high) |
| Pin 4 | SD β Shutdown input (active low, disables both outputs) |
| Pin 5 | VSS β Logic ground |
| Pin 6 | COM β Low-side gate driver return |
| Pin 7 | LO β Low-side gate drive output |
| Pin 8 | VCC β Low-side gate drive supply |
| Pin 9 | VS β High-side floating supply return |
| Pin 10 | HO β High-side gate drive output |
| Pin 11 | VB β High-side floating supply |
| Pin 12 | NC β Not connected (per datasheet) |
| Pin 13 | NC β Not connected (per datasheet) |
| Pin 14 | NC β Not connected (per datasheet) |
| Pin 15 | NC β Not connected (per datasheet) |
| Pin 16 | NC β Not connected (per datasheet) |
Typical Applications
IRS2110STRPBF is suitable for 6 applications: Three-Phase Motor Drive Inverter, Half-Bridge Switch-Mode Power Supply, Electronic Lighting Ballast, Solar Inverter Power Stage, Automotive 48 V Mild-Hybrid Solenoid Driver, Industrial Welding and Plasma Cutters.
Three-Phase Motor Drive Inverter
The IRS2110STRPBF drives the high-side and low-side IGBTs or MOSFETs of a three-phase bridge in industrial motor drives. Each half-bridge channel provides 2.5 A source and 2.5 A sink peak current, sufficient to switch 600 V / 50 A-class IGBT modules within 30 ns of the input transition. The 500 V offset rating covers 230 V and 400 V rectified mains, while the integrated bootstrap diode removes the external high-voltage charge pump. In a typical 3-phase drive, three IRS2110STRPBF ICs (one per phase) accept 3.3 V PWM logic from the microcontroller and level-shift it to the high-side gate. The shutdown pin allows the controller to disable all outputs in one cycle on overcurrent detection. Compared to optocoupler-based drives, the IRS2110STRPBF eliminates delay mismatch and provides negative-VS transient immunity.
Recommended
Half-Bridge Switch-Mode Power Supply
In half-bridge and full-bridge SMPS topologies, the IRS2110STRPBF provides the level-shifted gate drive for the primary-side MOSFETs. The 500 V offset covers rectified 230 V mains and PFC-boost front ends, while the 30 ns propagation delay enables duty cycles down to a few percent in current-mode control. The integrated bootstrap diode charges the high-side supply capacitor on every low-side turn-on, supporting continuous duty at switching frequencies from 50 kHz to 500 kHz. With 2.5 A source and 2.5 A sink current, the driver can charge the Miller plateau of 600 V MOSFETs in under 50 ns, reducing switching losses. The shutdown pin is wired to the PWM controller fault output to latch the supply off on overcurrent or short circuit.
Recommended
Electronic Lighting Ballast
The IRS2110STRPBF drives the half-bridge resonant stage of electronic ballasts for fluorescent and HID lamps. The 500 V offset rating covers the high-Q tank circuit voltage swings of 600 V or more on the switching node, and the 17 ns rise / 25 ns fall times support resonant frequencies above 100 kHz for high-frequency lamp operation. The integrated bootstrap diode simplifies the ballast PCB, while the active-low shutdown pin interfaces directly to the lamp-end-of-life detection circuit to disable drive on fault. Compared to discrete gate-drive transformers used in legacy ballasts, the IRS2110STRPBF delivers tighter timing and lower EMI, and supports soft-start through PWM modulation of the HIN/LIN inputs.
Recommended
Solar Inverter Power Stage
The IRS2110STRPBF is well suited to photovoltaic string inverters in the 600 V DC bus class. The 500 V offset rating tolerates open-circuit string voltages up to 450 V with margin, and the high dV/dt immunity prevents false triggering on the long lead inductances typical of PV wiring. Each IRS2110STRPBF drives one half-bridge of the H4 or HERIC topology, accepting 3.3 V PWM from the digital control board and providing 2.5 A peak gate current to switch 600 V / 30 A MOSFETs. The integrated shutdown function enables fast inverter disconnect on arc-fault events, meeting UL 1699B requirements. The wide -40 C to +150 C operating range supports outdoor inverter enclosures without derating.
Recommended
Automotive 48 V Mild-Hybrid Solenoid Driver
In 48 V mild-hybrid vehicle systems, the IRS2110STRPBF drives high-side and low-side MOSFETs that switch starter-generator solenoids, active engine mounts, and DC-DC converter stages. The 500 V offset rating provides far more headroom than required for 48 V buses, supporting flyback voltage spikes from inductive loads. The 3.3 V logic compatibility connects directly to automotive MCUs without level-shifting circuitry, and the integrated bootstrap diode reduces PCB area under the hood. The shutdown input enables rapid disconnect of the load on crash sensor trigger. Although not AEC-Q100 qualified, the IRS2110STRPBF is widely used in non-safety automotive subsystems where high reliability in harsh electrical environments is required.
Recommended
Industrial Welding and Plasma Cutters
The IRS2110STRPBF drives the high-frequency switching stage of inverter-based welders and plasma cutters. The 500 V offset rating covers the rectified 3-phase mains of up to 560 V rms, and the 2.5 A peak gate current is sufficient for the 600 V / 100 A IGBT modules commonly used in these systems. The 30 ns matched propagation delay on the high-side and low-side channels prevents cross-conduction in the half-bridge, while the integrated shutdown function provides one-cycle fault response to overcurrent events detected on the current-sense shunt. The SOIC-WB-16 package provides adequate thermal dissipation when mounted on the heavy copper of welder power boards.
Recommended
Recommended Products Summary
Engineering reference data for IRS2110STRPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IR2110STRPBF | IR2110SPBF | IRS2113STRPBF | IRS2112STRPBF | IRS2118SPBF | IRS21867STRPBF |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | 16-pin SOIC Wide-Body | 16-pin SOIC Wide-Body (same) | 16-pin SOIC Wide-Body (same) | 16-pin SOIC Wide-Body (same) | 16-pin SOIC Wide-Body (same) | 16-pin SOIC Wide-Body (same) | 16-pin SOIC Wide-Body (same) |
| Maximum Offset Voltage | 500 V | 500 V | 500 V | 500 V | 600 V | 600 V | 600 V |
| Source / Sink Output Current (typ.) | 2.5 A / 2.5 A | 2.5 A / 2.5 A | 2.5 A / 2.5 A | 2.5 A / 2.5 A | 2.5 A / 2.5 A | 2.5 A / 2.5 A | 4.0 A / 4.0 A |
| Propagation Delay ton/toff | 30 ns / 30 ns | 30 ns / 30 ns | 30 ns / 30 ns | 30 ns / 30 ns | 30 ns / 30 ns | 30 ns / 30 ns | 30 ns / 30 ns |
| Bootstrap Diode | Integrated | Integrated | Integrated | Integrated | Integrated | Integrated | Integrated |
| Shutdown Pin | Yes (active-low) | Yes (active-low) | Yes (active-low) | No (VCC UVLO instead) | Yes (active-low) | Yes (active-low) | Yes (active-low) |
| Packaging Form | Tape & Reel | Tape & Reel | Tube | Tape & Reel | Tape & Reel | Tube | Tape & Reel |
Key Differentiators
- 500 V offset with integrated bootstrap diode (vs IRS2112STRPBF)
- Active-low shutdown input on every channel (vs IRS2113STRPBF)
- Tape-and-Reel packaging for high-volume SMT lines (vs IR2110SPBF)
Design Notes
Place the bootstrap capacitor (CB) of 0.1 Β΅F to 1 Β΅F low-ESR ceramic directly between the VB and VS pins of the IRS2110STRPBF with traces shorter than 5 mm. The VCC bypass should combine a 0.1 Β΅F ceramic placed within 3 mm of the VCC pin and a 1 Β΅F bulk capacitor on the same net. The high-side return (VS) must connect to the source of the high-side switch with a low-inductance Kelvin trace; long VS traces couple switching noise into the level-shift circuit and can cause spurious high-side turn-on.
Estimated: at VCC = 15 V, switching frequency = 100 kHz, and gate charge Qg = 50 nC (typical 600 V MOSFET), the IRS2110STRPBF dissipates roughly 0.15 W from gate-drive losses alone. With 2.5 A peak source/sink current, additional dissipation from on-resistance of the internal driver MOSFETs (typically 1.5 ohm) adds another 0.1 W to 0.3 W depending on duty cycle. The SOIC-WB-16 package has theta_JA of approximately 75 C/W on a 1 oz 1 square inch copper pour, so junction rise is well below 30 C in most designs. For switching frequencies above 200 kHz or larger IGBT modules, increase the copper pour to 2 square inches.
Do not operate the IRS2110STRPBF without the bootstrap capacitor in place; the high-side channel will not turn on until the bootstrap supply (VB-VS) exceeds the VBS UVLO threshold of approximately 8.6 V. Also avoid pulling VS below COM by more than the negative transient rating during the switching cycle; if the half-bridge sees a hard-switched inductive load, add a small RC snubber on VS to limit dV/dt. Finally, do not leave the SD pin floating - tie it to VDD through a 10 kohm pull-up so the driver enables on power-up.
Compliance Information
RoHS compliant per Infineon product page. Not AEC-Q100 qualified - this part targets industrial and consumer applications; automotive safety-critical applications should use the AEC-Q100 grade variants listed in the Infineon automotive gate-driver family.
