BSZ060NE2LSATMA1 - 25V 44A OptiMOS N-Channel MOSFET | Infineon
부품 번호: BSZ060NE2LSATMA1 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $0.62 | $0.62 |
| 10 | $0.55 | $5.50 |
| 100 | $0.46 | $46.00 |
| 500 | $0.38 | $190.00 |
| 1,000 | $0.32 | $320.00 |
| 5,000 | $0.27 | $1,350.00 |
BSZ060NE2LSATMA1 개요
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is the active switching element in synchronous buck converters, half-bridges, and load-switch circuits. It belongs to the discrete semiconductor hierarchy: MOSFET -> transistor -> discrete semiconductor -> semiconductor device. Within the MOSFET family, N-channel enhancement-mode devices dominate low-voltage (<=40 V) synchronous rectification because their lower RDS(on) per unit silicon area enables higher current handling and lower conduction loss than equivalent P-channel parts.
Key features include Infineon's OptiMOS™ trench-gate process, which achieves industry-leading Figure of Merit (RDS(on) × Qg) for switching loss reduction, a logic-level compatible gate threshold typically supporting 4.5 V drive, and low thermal resistance through the exposed-die pad. The TSDSON-8-FL package provides an exposed lead frame that doubles as the drain connection and thermal dissipation path, allowing the device to dissipate up to 26 W when properly mounted on a PCB with adequate copper thermal vias.
The BSZ060NE2LSATMA1's combination of 25 V rating, sub-10 mΩ on-resistance, and small footprint makes it particularly suited for point-of-load converters in servers, notebook adapters, USB-PD power paths, and motor drive half-bridges. The OptiMOS™ technology family shares a common datasheet and pinout, allowing designers to scale to higher or lower RDS(on) variants without board rework.
When designing with this part, prioritize a 4-layer PCB with a thermal copper pour under the exposed pad; keep the gate-drive loop area minimal to limit ringing; and verify the SOA (Safe Operating Area) at the application's VDS, ID, and pulse-width combination. Compared with older TrenchFET or DMOS parts, this MOSFET reduces switching losses by approximately 30 percent at 25 V operation.
Typical applications for the BSZ060NE2LSATMA1 include synchronous buck converters in networking switches, battery management system (BMS) protection FETs, hot-swap controllers on server backplanes, USB Type-C PD load switches, and motor drive half-bridges in small fans and pumps. The combination of low RDS(on), small footprint, and 25 V rating makes it a strong fit wherever efficiency and board area both matter.
This page synthesizes distributor stock and pricing, pin-compatible drop-in alternatives from Infineon's OptiMOS™ family, and practical PCB layout notes not found in the manufacturer datasheet.
드롭인 대체품: BSZ060NE2LSATMA1 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: BSZ060NE2LSATMA1 (동일 폼 팩터 및 풋프린트) — 차이점: Package, Technology, Operating Junction Temperature, RoHS Status, MSL Level.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
BSZ0501NS
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
BSZ0902NS
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
BSZ0901NS
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
BSC0501NS
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
BSZ040NE2LS
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
BSZ060NE2LSATMA1 최대 정격 & 전기적 특성
| Manufacturer | Infineon Technologies |
| Part Number | BSZ060NE2LSATMA1 |
| Technology | OptiMOS™ (N-Channel Trench MOSFET) |
| Drain-Source Voltage (VDS) | 25 V |
| Continuous Drain Current (ID) @ Ta=25C | 12 A |
| Continuous Drain Current (ID) @ Tc=25C | 44 A |
| Pulsed Drain Current (IDM) | 44 A |
| On-Resistance RDS(on) max @ VGS=10V | 6 mOhm |
| Power Dissipation (Ta) | 2.1 W |
| Power Dissipation (Tc) | 26 W |
| 동작 온도 범위 | -55C to +150C |
| 패키지 | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) |
| 실장 유형 | Surface Mount |
| RoHS 상태 | Compliant |
| MSL 레벨 | 1 |
| Shipping Packaging | Tape & Reel |
BSZ060NE2LSATMA1 핀 구성
| 핀 1 | S — Source |
| 핀 2 | S — Source |
| 핀 3 | S — Source |
| 핀 4 | G — Gate |
| 핀 5 | S — Source |
| 핀 6 | S — Source |
| 핀 7 | S — Source |
| 핀 8 | S — Source |
| 핀 PAD | D — Drain (exposed thermal pad on bottom of package) |
안전 동작 영역 (DC)
일반적인 애플리케이션
BSZ060NE2LSATMA1 적합 용도: 6 애플리케이션s: Synchronous Buck DC-DC Converter, USB Type-C PD Load Switch, Battery Protection / Hot-Swap Controller, Server / Networking Point-of-Load, Small Motor Drive Half-Bridge, LED Driver High-Side Switch.
Synchronous Buck DC-DC Converter
The BSZ060NE2LSATMA1 serves as the low-side synchronous rectification MOSFET in 12 V input / 1.0-3.3 V output buck converters for server POL rails and networking ASICs. Its 25 V VDS rating provides ample margin on 12 V nominal buses, and the 6 mOhm RDS(on) limits conduction loss to ~0.86 W at 12 A. Compared to older TrenchFET parts the OptiMOS trench cell reduces switching loss by ~30%, allowing higher switching frequencies (500 kHz-1 MHz) without efficiency penalty. Use a 10 V gate drive and keep the high-side/low-side gate-drive loop area minimal for clean switching.
추천
USB Type-C PD Load Switch
The BSZ060NE2LSATMA1 fits USB-PD load-switch and VBUS path switching in Type-C connectors and downstream-facing ports. Its 25 V VDS comfortably covers 20 V PDO with derating margin; 6 mOhm RDS(on) keeps voltage drop under 30 mV at 5 A charging current, preserving tight cable-compensation budgets; and the PQFN 3.3 x 3.3 mm footprint fits inside Type-C connector housings. Drive the gate with a 10 V enhancement rail; the device's low gate charge (Qg typ ~30 nC from family datasheet) keeps driver losses minimal during fast PD role-swap transitions.
추천
Battery Protection / Hot-Swap Controller
The BSZ060NE2LSATMA1 functions as a low-side battery protection or hot-swap control MOSFET in 1S-4S lithium-ion packs and 12 V server backplanes. Its 44 A pulsed IDM rating handles inrush events during hot-plug of capacitive loads; the 6 mOhm on-resistance limits steady-state dissipation; and the logic-level threshold allows direct GPIO drive from a battery management IC. For redundant hot-swap designs, parallel two BSZ060NE2LSATMA1 devices to halve RDS(on) and distribute thermal load across the PCB.
추천
Server / Networking Point-of-Load
In server motherboard and networking switch point-of-load (POL) converters, the BSZ060NE2LSATMA1 provides the synchronous FET for 12 V input / 0.8-1.8 V core voltage rails powering CPUs, ASICs, and DDR memory. The 25 V rating and 44 A pulsed current capability handle load transients from <1 A to >20 A in microseconds, while the 6 mOhm RDS(on) keeps conduction loss under 1 W at 12 A continuous. The PQFN 3.3 x 3.3 mm exposed-pad package enables tight interleaved multi-phase layouts common in modern VRM designs.
추천
Small Motor Drive Half-Bridge
The BSZ060NE2LSATMA1 is suitable for low-voltage brushed DC and small BLDC/PMSM motor half-bridges in fans, pumps, and small appliances operating from 12-19 V supplies. The 44 A pulsed rating supports motor stall current for tens of milliseconds, and the 25 V VDS tolerates inductive flyback within the 19 V supply plus margin. Use paired N-channel high-side/low-side BSZ060NE2LSATMA1 FETs in a synchronous buck-style H-bridge topology, or as the low-side switch only with a P-channel or N-channel high-side companion.
추천
LED Driver High-Side Switch
The BSZ060NE2LSATMA1 can serve as a high-side P-channel replacement (used as a low-side switch to ground return) or as a high-side N-channel with charge-pump drive in 12-24 V LED driver architectures. The 6 mOhm on-resistance minimizes dissipation when driving high-current LED strings (e.g., architectural lighting, automotive headlights). The PQFN 3.3 x 3.3 mm package allows dense multi-channel LED driver PCBs. For PWM dimming at >1 kHz, ensure switching losses (driven by gate charge) fit within the thermal budget.
추천
추천 제품 요약
엔지니어링 참조 데이터: BSZ060NE2LSATMA1 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | BSZ0501NS | BSZ0902NS | BSZ0901NS | BSC0501NS | BSZ040NE2LS |
|---|---|---|---|---|---|---|
| Package | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) | PG-TSDSON-8-FL - same | PG-TSDSON-8-FL - same | PG-TSDSON-8-FL - same | PG-TSDSON-8-FL - same | PG-TSDSON-8-FL - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Drain-Source Voltage (VDS) | 25 V | 25 V | 25 V | 25 V | 25 V | 25 V |
| RDS(on) max @ VGS=10V | 6 mOhm | ~5 mOhm | ~9 mOhm | ~9 mOhm | ~5 mOhm | ~4 mOhm |
| Technology Family | OptiMOS 2 | OptiMOS 2 | OptiMOS 2 | OptiMOS 2 | OptiMOS 5 | OptiMOS 2 |
| Pin-to-Pin Compatible | Yes (reference) | Yes | Yes | Yes | Yes | Yes |
| Approx Unit Price (qty 1000) | USD 0.32 | Higher (~USD 0.45) | Lower (~USD 0.20) | Lower (~USD 0.20) | Higher (~USD 0.50) | Higher (~USD 0.55) |
주요 차별점
- OptiMOS 2 technology Figure of Merit (vs BSZ0901NS (higher RDS(on) variant))
- Infineon OptiMOS family pin-to-pin scaling (vs BSC0501NS (OptiMOS 5 generation))
- Wide portfolio of RDS(on) options (vs BSZ040NE2LS (4 mOhm lower-loss variant))
설계 노트
The PG-TSDSON-8-FL package relies on the exposed bottom pad for both drain electrical connection and primary thermal dissipation. Per Infineon's application note, a minimum of 4 thermal vias (0.3 mm drill, 1 oz copper plating) under the pad is recommended to achieve the datasheet's 60 C/W RθJA on a 1S1P JEDEC test board. In production designs with 4-layer 2 oz inner copper, RθJA can drop to ~25-30 C/W, enabling >40 W transient dissipation. Estimated: at 2.5 W steady dissipation, junction temperature rises ~62 C above 25 C ambient on the 1S1P reference board, rising to ~150 C at 4 W continuous.
Place the gate-drive return (Kelvin source connection) as close to pin 4 as possible. Although the TSDSON-8 has multiple source pins that all internally connect, inductance between the gate-drive return path and the power source path causes gate-drive ringing and possible shoot-through. Recommended layout: use the S pins directly adjacent to G as the gate-driver ground return, separate from the high-current power source plane that flows through the bottom drain pad. Keep the gate-loop area under 5 mm^2 to limit L*di/dt overshoot during switching transitions.
Drive the gate with a 10 V enhancement voltage for full RDS(on) specification. Although the family supports logic-level (4.5 V) drive, RDS(on) at 4.5 V VGS is typically 1.5-2x higher than at 10 V VGS - a significant loss penalty in high-current applications. Use a dedicated gate-driver IC (e.g., UCC27531, ISL89163) rather than a microcontroller GPIO for switching frequencies above 100 kHz. Estimated: at 12 A load, switching from 10 V to 4.5 V gate drive increases conduction loss from ~0.86 W to ~1.7 W.
Do not exceed the absolute maximum ratings of VGS = +/-20 V (per Infineon datasheet) - ESD events during handling can punch through the gate oxide. Use proper ESD precautions and consider a gate-source Zener clamp (5.1 V or 12 V) if the application has inductive gate paths. Also avoid operating in linear mode for extended periods: the SOA boundary drops sharply above 10 V VDS at DC, so hot-swap and inrush events must be <100 ms to stay within safe limits.
At switching frequencies above 500 kHz, parasitic source inductance (L_S) in the TSDSON-8 package (~1 nH internal) becomes significant. The voltage across L_S during turn-on subtracts from VGS, slowing the switching transition and increasing switching loss. Mitigation: (a) minimize PCB source inductance by placing the gate-driver return via directly under the gate pin, (b) use a small external gate-source capacitor (1-10 nF) to add local drive, or (c) select a higher-RDS(on) variant with lower Qg/Qgd ratio for easier drive.
규정 준수 정보
RoHS and REACH compliant per Infineon product page. MSL Level 1 per JEDEC J-STD-020. Not AEC-Q100 qualified - for automotive applications, see Infineon's automotive-grade OptiMOS portfolio.
