STB30N60DM2AG - 600V 30A N-Channel MDmesh DM2 Power MOSFET | STMicroelectronics
부품 번호: STB30N60DM2AG ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $3.42 | $3.42 |
| 10 | $3.08 | $30.80 |
| 100 | $2.74 | $274.00 |
| 500 | $2.46 | $1,230.00 |
| 1,000 | $2.19 | $2,190.00 |
STB30N60DM2AG 개요
A Power MOSFET is a type of field-effect transistor optimized for switching and amplification in power electronics. It operates by controlling the conductivity between the drain and source terminals through an insulated gate voltage. Power MOSFETs are essential components in switch-mode power supplies, DC-DC converters, and motor drives, where they handle high voltages and currents with minimal power loss. They are part of the broader family of power semiconductor devices, which also includes IGBTs and thyristors, but MOSFETs are preferred for high-frequency switching due to their fast switching speeds and low drive power requirements.
Key features of the STB30N60DM2AG include a low typical on-resistance of 0.099 ohm, a wide operating junction temperature range from -55°C to +150°C, and a gate charge of 60 nC. The device is RoHS compliant and halogen-free, meeting modern environmental standards. Its MDmesh DM2 technology reduces conduction and switching losses, improving overall system efficiency. The D2PAK package offers excellent thermal performance with a junction-to-case thermal resistance of 0.5°C/W, enabling effective heat dissipation in high-power applications.
The STB30N60DM2AG is built on a planar stripe layout with a proprietary process that minimizes the on-resistance per unit area. The device features an intrinsic body diode with a fast reverse recovery time, which is beneficial in bridge topologies. The gate charge characteristics are optimized for low gate drive losses, and the device is designed to withstand high dv/dt rates, ensuring robust operation in harsh environments. The MDmesh DM2 series is known for its ruggedness and reliability, making it a preferred choice for industrial applications.
Typical applications include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, DC-DC converters, and motor control in industrial and automotive systems. The device's high voltage rating and low on-resistance make it ideal for 400V bus systems and 3-phase inverter stages. In motor control, the fast switching capability reduces electromagnetic interference (EMI) and improves efficiency.
When designing with this MOSFET, ensure proper gate drive voltage (typically 10V to 15V) to fully enhance the channel and minimize conduction losses. A gate resistor may be needed to control switching speed and reduce ringing. Adequate heat sinking is essential to keep the junction temperature within limits, especially at high currents. The device is not AEC-Q100 qualified, so for automotive applications, consider the AEC-Q101 qualified version STB30N60DM2AG-1.
드롭인 대체품: STB30N60DM2AG — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
STB30N60DM2AG-1
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
STB30N60M2-EP
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
STB30N60DM2
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
IPB30N60S5
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
FCH30N60
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
STB30N60DM2AG 최대 정격 & 전기적 특성
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID) at 25°C | 30 A |
| Continuous Drain Current (ID) at 100°C | 19 A |
| Pulsed Drain Current (IDM) | 120 A |
| Gate-Source Voltage (VGS) | ±25 V |
| Power Dissipation (PD) | 250 W |
| On-Resistance (RDS(on)) typical | 0.099 ohm |
| On-Resistance (RDS(on)) max | 0.119 ohm |
| Gate Charge (Qg) | 60 nC |
| Input Capacitance (Ciss) | 2100 pF |
| Output Capacitance (Coss) | 120 pF |
| Reverse Transfer Capacitance (Crss) | 5 pF |
| 동작 접합 온도 | -55°C to +150°C |
| 패키지 | D2PAK (TO-263) |
| 실장 유형 | Surface Mount |
| RoHS 상태 | Compliant |
| 할로겐 프리 | Yes |
STB30N60DM2AG 핀 구성
| 핀 1 | Gate — Gate drive input |
| 핀 2 | Drain — Drain connection (tab) |
| 핀 3 | Source — Source connection |
안전 동작 영역
일반적인 애플리케이션
STB30N60DM2AG 적합 용도: 6 애플리케이션s: Switch-Mode Power Supplies (SMPS), Power Factor Correction (PFC), DC-DC Converters, Motor Control, Solar Inverters, Welding Equipment.
Switch-Mode Power Supplies (SMPS)
The STB30N60DM2AG is ideal for SMPS due to its 600V rating and low on-resistance, enabling high efficiency in AC-DC converters. Its fast switching speed reduces switching losses, and the low RDS(on) minimizes conduction losses. In a typical flyback or forward converter, the MOSFET switches at frequencies up to 100 kHz, and the low gate charge (60 nC) simplifies gate drive design. The D2PAK package allows efficient heat dissipation, ensuring reliable operation at high power levels. Compared to IGBTs, the MOSFET offers faster switching, which is beneficial for reducing transformer size and improving transient response.
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Power Factor Correction (PFC)
In PFC circuits, the STB30N60DM2AG operates in boost converter topology to shape the input current waveform. Its 600V breakdown voltage provides ample margin for the boosted output voltage (typically 400V). The low on-resistance (0.099 ohm) minimizes conduction losses, improving overall efficiency. The fast body diode reduces reverse recovery losses during continuous conduction mode. The device's high dv/dt capability ensures stable operation under transient conditions. With a gate charge of 60 nC, the gate driver can switch the MOSFET at high frequencies (up to 200 kHz) with minimal losses, enabling compact PFC designs.
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DC-DC Converters
The STB30N60DM2AG is well-suited for DC-DC converters, particularly in isolated topologies like full-bridge and half-bridge. Its 600V rating allows operation from high-voltage input rails (up to 400V). The low on-resistance reduces conduction losses, while the fast switching speed minimizes switching losses, enabling high-frequency operation and smaller magnetic components. The device's thermal resistance of 0.5°C/W allows efficient heat sinking, ensuring reliable operation at high power densities. In a typical full-bridge converter, the MOSFETs are driven at 100 kHz, and the low gate charge simplifies the gate drive circuit.
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Motor Control
In motor control applications, the STB30N60DM2AG is used in three-phase inverter stages for driving AC motors. Its 600V rating is suitable for 400V bus systems, and the low on-resistance minimizes conduction losses in the inverter. The fast switching speed reduces EMI and improves efficiency. The device's ruggedness ensures reliable operation under inductive load switching. In a typical VFD (variable frequency drive), the MOSFETs are switched at 20 kHz, and the low gate charge allows simple gate drive design. The D2PAK package provides good thermal performance, enabling continuous operation at high currents.
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Solar Inverters
The STB30N60DM2AG is used in solar inverter systems for DC-AC conversion. Its 600V rating is ideal for the high-voltage DC bus (typically 400V) from solar panels. The low on-resistance reduces conduction losses, improving the overall efficiency of the inverter. The fast switching speed enables high-frequency PWM, reducing the size of output filters. The device's thermal performance allows operation in outdoor environments with proper heatsinking. In a typical string inverter, the MOSFETs are used in a full-bridge topology, and the low gate charge simplifies the gate drive design.
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Welding Equipment
In welding equipment, the STB30N60DM2AG is used in the inverter stage to convert DC to high-frequency AC for the welding arc. Its 600V rating handles the high input voltage, and the low on-resistance minimizes losses. The fast switching speed allows high-frequency operation, reducing transformer size and weight. The device's ruggedness ensures reliable operation under harsh conditions. In a typical inverter welder, the MOSFETs are switched at 50 kHz, and the low gate charge enables efficient gate drive. The D2PAK package provides good thermal management, essential for continuous high-current operation.
추천
추천 제품 요약
엔지니어링 참조 데이터: STB30N60DM2AG — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | STB30N60DM2AG-1 | STB30N60M2-EP | IPB30N60S5 |
|---|---|---|---|---|
| Package | D2PAK (TO-263) | D2PAK (TO-263) - same | D2PAK (TO-263) - same | D2PAK (TO-263) - same |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics | Infineon |
| Drain-Source Voltage (VDS) | 600 V | 600 V | 600 V | 600 V |
| Continuous Drain Current (ID) at 25°C | 30 A | 30 A | 30 A | 30 A |
| On-Resistance (RDS(on)) typical | 0.099 ohm | 0.099 ohm | 0.099 ohm | 0.1 ohm |
| Gate Charge (Qg) | 60 nC | 60 nC | 60 nC | 65 nC |
| Power Dissipation (PD) | 250 W | 250 W | 250 W | 255 W |
| Automotive Grade | No | Yes (AEC-Q101) | No | No |
주요 차별점
- Automotive grade option available (vs STB30N60DM2AG-1)
- MDmesh DM2 technology (vs STB30N60M2-EP)
- Lower on-resistance than cross-brand alternatives (vs IPB30N60S5)
설계 노트
The STB30N60DM2AG has a maximum power dissipation of 250W at 25°C case temperature. With a junction-to-case thermal resistance of 0.5°C/W, a heatsink is required for high-power operation. For example, at 100W dissipation, the junction temperature rise is 50°C above case temperature. Ensure adequate heatsinking and airflow to keep the junction temperature below 150°C.
For the D2PAK package, ensure the exposed pad (drain) is soldered to a large copper area for heat dissipation. Use multiple vias to connect the pad to inner layers. Place the gate drive circuit close to the gate pin to minimize parasitic inductance. Use a gate resistor (typically 10 ohm) to control switching speed and reduce ringing.
Do not exceed the maximum gate-source voltage of ±25V. Use a gate driver with appropriate voltage levels (typically 10-15V) to fully enhance the channel. Ensure the drain-source voltage does not exceed 600V, especially during transients. Consider the body diode reverse recovery characteristics in bridge topologies to avoid excessive losses.
규정 준수 정보
RoHS compliant and halogen-free per ST datasheet. Not AEC-Q100 qualified; use STB30N60DM2AG-1 for automotive.