CY14B101J2 - 1Mbit I2C nvSRAM, 3.4MHz, 20-Year Retention | Infineon
부품 번호: CY14B101J2 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $0.28 | $0.28 |
| 10 | $0.26 | $2.60 |
| 100 | $0.24 | $24.00 |
| 500 | $0.22 | $110.00 |
| 1,000 | $0.19 | $190.00 |
CY14B101J2 개요
An nvSRAM (non-volatile static RAM) is a memory IC that behaves like a standard SRAM for unlimited read and write cycles while automatically copying SRAM contents to a non-volatile element on power loss. In the memory hierarchy it sits between volatile SRAM (fast but loses data) and EEPROM/Flash (non-volatile but slow, block-limited writes), making it a power management-friendly replacement where frequent writes and instant non-volatility are both required.
Key features of the CY14B101J2 include the 1-Mbit (128K x 8) density, a 3.4 MHz I2C serial bus interface, 20-year data retention, and hardware-store capability triggered by external control - automatic store on power fail is handled internally without software intervention. Writes to SRAM occur at SRAM speed with no page or sector erase constraints, unlike EEPROM which requires byte-limited programming delays.
Architecturally, the device uses Cypress/Infineon quantum-trap non-volatile elements that store SRAM snapshots without the wear-out and long store times typical of floating-gate technology. The J2 suffix in the part number denotes the 3.4 MHz speed grade of the CY14B101J serial nvSRAM family. Address decoding is handled by up to three external address pins (A0-A2) allowing multiple devices on one I2C bus.
Typical applications include industrial data loggers requiring frequent writes without EEPROM wear concerns, metering systems storing usage profiles across power cycles, and networking equipment retaining configuration tables during brown-outs. The device also suits POS terminals and battery-backed-up-SRAM replacement designs, eliminating the lithium cell and its maintenance burden.
Design consideration: the non-volatile store operation requires a capacitor on the VCAP pin (per the family datasheet) to supply energy during store; observe recommended capacitor type and value for guaranteed retention. Budget the store time (typically milliseconds) in system power-fail sequencing.
This page adds value beyond the datasheet by synthesizing distributor availability, drop-in alternative analysis, comparison tables, and practical design notes in one AI-citable reference.
드롭인 대체품: CY14B101J2 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: CY14B101J2 (동일 폼 팩터 및 풋프린트) — 차이점: Interface, Organization, RoHS Status, Density, Memory Size.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
CY14B101J2-SXI
✅ 드롭인✓ 재고 있음
$3.4 / 개
데이터시트 보기 →CY14B101J2-SXIT
✅ 드롭인✓ 재고 있음
$1.65 / 개
데이터시트 보기 →CY14B101J1
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
CY14B101J2 최대 정격 & 전기적 특성
| 메모리 유형 | nvSRAM (Non-Volatile SRAM) |
| Density | 1 Mbit (1049 kbits) |
| 메모리 구성 | 128K x 8 |
| 인터페이스 | I2C (Serial) |
| Max Clock Frequency | 3.4 MHz |
| Data Retention | 20 years |
| SRAM Read/Write Cycles | Unlimited (per nvSRAM architecture) |
| Address Pins | A0, A1, A2 |
| Automatic Store | Yes (internal power-fail detection) |
| 패키지 | 16-SOIC (MO-119, 0.300 inch) |
| 실장 유형 | Surface Mount |
| RoHS 상태 | RoHS Compliant |
CY14B101J2 16-soic (mo-119, 0.300 inch) 핀 구성 가이드
CY14B101J2(16-soic (mo-119, 0.300 inch) 패키지)의 핀 구성입니다. 이 디지털 IC에는 GPIO, 통신 인터페이스(UART, SPI, I2C), 전원 핀이 포함되어 있습니다. 대체 핀 기능과 구성 옵션은 제조사 데이터시트를 참조하십시오. 임베디드 시스템 설계와 PCB 레이아웃에 필수적입니다.
다음에 대한 상세 핀아웃 데이터 없음: CY14B101J2.
다음을 참조하십시오: 데이터시트 전체 핀 구성은 다음을 참조하십시오.
일반적인 애플리케이션
CY14B101J2 적합 용도: 6 애플리케이션s: Industrial Data Logging, Utility Metering, Networking and Telecom Equipment, Point-of-Sale and Payment Terminals, Battery-Backed SRAM Replacement, Medical and Diagnostic Instrumentation.
Industrial Data Logging
The CY14B101J2 fits industrial data loggers because it combines SRAM-speed writes (unlimited endurance at the 3.4 MHz I2C bus rate) with automatic non-volatile store on power failure and 20-year retention. A logger sampling process variables every few milliseconds can write continuously into the 128K x 8 SRAM array without the write delays and endurance limits that a serial EEPROM would impose, since the nvSRAM performs only one non-volatile store event per power cycle. When mains power is interrupted, internal power-fail detection transfers the log snapshot to quantum-trap cells automatically, so logged records survive even unannounced shutdowns. Designers should budget the store energy via the VCAP capacitor specified in the family datasheet and allow store time during brown-out sequencing.
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Utility Metering
Smart electricity, gas, and water meters benefit directly from the CY14B101J2's 20-year retention and battery-free non-volatility. Usage profiles, tariff tables, and tamper-event counters are updated frequently - often multiple times per second in load-profile recording - which would exhaust a conventional EEPROM's endurance long before a 15-year meter service life ends. The nvSRAM absorbs those unlimited updates at SRAM speed, while the automatic store function captures the latest billing snapshot the instant supply power drops, meeting revenue-accuracy requirements without a lithium backup cell or its monitoring and field-replacement logistics. The 3.4 MHz I2C interface, with A0-A2 address pins for multi-device busses, connects cleanly to metering microcontrollers.
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Networking and Telecom Equipment
Routers, switches, and line cards use the CY14B101J2 to hold configuration tables, MAC/port maps, and boot parameters across brown-outs and hot restarts. Unlike EEPROM, whose byte-write delays would stall control-plane code paths, the nvSRAM lets firmware rewrite lookup tables at full speed during operation, then trusts the automatic store mechanism to preserve them if the -48V or intermediate rail collapses. The 20-year retention specification matches typical telecom equipment service lives, eliminating maintenance batteries in remote cabinets. The wide 16-SOIC (MO-119) package handles the higher ambient temperatures typical of sealed outdoor equipment, and the I2C bus with three address pins allows several memory devices to coexist on one management controller.
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Point-of-Sale and Payment Terminals
POS terminals require transaction journals that must survive sudden power removal mid-transaction - exactly the failure mode the CY14B101J2's automatic non-volatile store addresses. Journal entries, security parameters, and cumulative totals are written at SRAM speed with no endurance penalty, while the 20-year retention and 1-Mbit (128K x 8) capacity hold substantial audit trails on a single low-cost device. Replacing battery-backed SRAM also removes a lithium cell from a device subject to transportation regulations and field-service battery checks, simplifying certification and reducing total cost of ownership. The 3.4 MHz I2C interface keeps journal commits fast enough not to slow checkout transaction times.
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Battery-Backed SRAM Replacement
The CY14B101J2 is a purpose-built replacement for legacy lithium-battery SRAM modules in industrial controllers, PLCs, and medical equipment being redesigned for RoHS and battery-transport compliance. Because the nvSRAM presents a serial I2C interface and stores automatically on power fail, it delivers the same 'instant non-volatile RAM' behavior without battery sockets, monitoring circuitry, or periodic cell replacement. The 20-year retention exceeds most lithium cells' practical service life in the field, and quantum-trap technology avoids the write-endurance and long-store-time limitations of EEPROM and Flash alternatives. Designers migrating from parallel BBSRAM must account for the serial interface and the VCAP-based store energy budget per the family datasheet.
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Medical and Diagnostic Instrumentation
Benchtop medical analyzers and portable diagnostic instruments store calibration constants, patient-configurable settings, and run counters that must never be lost yet are updated regularly. The CY14B101J2's unlimited SRAM write endurance handles per-sample counter updates, while its 20-year non-volatile retention and automatic power-fail store keep calibration data valid across the instrument's lifetime - critical because recalibration is costly and downtime in clinical settings is unacceptable. The RoHS-compliant 16-SOIC (MO-119) package supports compact instrument PCBs, and the 3.4 MHz I2C interface allows the memory to share a slow-speed management bus with sensors and RTC peripherals without contention concerns at typical calibration-write frequencies.
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추천 제품 요약
엔지니어링 참조 데이터: CY14B101J2 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | CY14B101J2-SXI | CY14B101J2-SXIT | CY14B101J1 |
|---|---|---|---|---|
| Package | 16-SOIC (MO-119, 0.300 inch) | 16-SOIC (MO-119) - same | 16-SOIC (MO-119) - same | 16-SOIC (MO-119) - same |
| Brand | Infineon Technologies (Cypress) | Infineon Technologies / Rochester Electronics | Infineon Technologies | Infineon Technologies (Cypress) |
| Density | 1 Mbit (128K x 8) | 1 Mbit (128K x 8) | 1 Mbit (128K x 8) | 1 Mbit (128K x 8) |
| Interface | I2C Serial | I2C Serial | I2C Serial | I2C Serial |
| Data Retention | 20 years | 20 years | 20 years | 20 years |
| RoHS | Compliant | Compliant | Compliant | Compliant |
주요 차별점
- High-speed I2C grade within the serial nvSRAM family (vs CY14B101J1)
- 20-year battery-free retention (vs Conventional serial EEPROM (24-series type))
- Dual supply chain (vs Single-sourced legacy BBSRAM)
설계 노트
The CY14B101J2 performs its non-volatile store using energy from the VCAP capacitor, so this pin must carry the exact capacitor type and value specified in the family datasheet - typically a low-ESR ceramic part. Estimated: a store event drawing the datasheet store current for the specified store duration defines the required charge; undersizing VCAP risks incomplete SRAM capture and corrupted non-volatile data after power loss. Never substitute a generic capacitor without verifying the datasheet ESR and value requirements.
Budget the non-volatile store time in your power-fail detection window: the microcontroller must allow the automatic store to complete before VCC collapses below the store-voltage threshold. If the upstream regulator holds up long enough, the store completes unaided; if not, add bulk capacitance on the 3.3V rail (estimated: regulator hold-up plus VCAP store energy must exceed store duration). Treating the nvSRAM like an EEPROM - waiting for write completion in software - wastes the key advantage of SRAM-speed writes.
Place the VCAP capacitor as close to the VCAP pin as possible with a short, wide return path to VSS to minimize ESR effects during the high-current store pulse. Keep SDA and SCL traces short on the I2C bus, with the recommended pull-up resistors sized for the 3.4 MHz high-speed mode (lower resistance than standard 100 kHz mode requires); at 3.4 MHz bus speeds, trace capacitance above roughly 100-200 pF degrades rise times, so consider bus buffers for heavily loaded multi-device segments.
규정 준수 정보
Package data from digchips states 'SOIC, 0.300 INCH, ROHS COMPLIANT, MO-119, SOIC-16'. REACH, lead-free, halogen-free and conflict-minerals statuses were not found in provided data.
