K4A8G045WB-BCRC - 8Gb DDR4 2Gx4 2400Mbps B-die | Samsung
부품 번호: K4A8G045WB-BCRC ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $4.2 | $4.20 |
| 10 | $3.9 | $39.00 |
| 100 | $3.55 | $355.00 |
| 500 | $3.25 | $1,625.00 |
| 1,000 | $2.95 | $2,950.00 |
K4A8G045WB-BCRC 개요
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a member of the DRAM family of volatile memory ICs that stores each bit in a transistor-capacitor cell and requires periodic refresh. DDR4 transfers data on both edges of a differential clock, and relative to DDR3 it lowers operating voltage from 1.5V to 1.2V, increases bank count, and improves bandwidth per watt, making it the dominant memory technology in servers, workstations, and desktop platforms.
Key features of this device include 8Gb density in a x4 organization, a 2400 Mbps speed grade, and support for core DDR4 features such as posted CAS, programmable CAS write latency (CWL), internal (self) calibration, on-die termination (ODT) via a dedicated ODT pin, and asynchronous reset, as described in the Samsung K4A8G045WB datasheet.
The B-die process technology provides high speed and high density with strong reliability characteristics. All control and address inputs are synchronized to a pair of externally supplied differential clocks, with inputs latched at the crosspoint of CK rising and CK falling edges. The stated timing specifications apply to DLL-enabled mode of operation.
Typical applications include DDR4 UDIMM, RDIMM, and SODIMM memory modules for servers, desktop PCs, and laptops, as well as networking equipment, data center platforms, and high-performance computing systems where 8Gb x4 density and 2400 Mbps bandwidth are required.
When designing with this component, place decoupling capacitors close to VDD and VDDQ balls, follow DDR4 fly-by routing with controlled impedance traces, and implement proper on-die and board-level termination per JEDEC DDR4 layout practice.
This page synthesizes distributor availability data, drop-in family alternatives, and practical DDR4 design notes not found in the manufacturer datasheet alone.
드롭인 대체품: K4A8G045WB-BCRC — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: K4A8G045WB-BCRC (동일 폼 팩터 및 풋프린트) — 차이점: Data Rate, Operating Temperature, Supply Voltage, Memory Type, Package.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
K4A8G045WB-BCPB
✅ 드롭인✓ 재고 있음
$9.0234 / 개
데이터시트 보기 →K4A8G085WB-BCRC
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$6.8 / 개
데이터시트 보기 →K4A8G165WB-BCRC
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$12.57 / 개
데이터시트 보기 →K4A8G085WB-BICR
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$4.25 / 개
데이터시트 보기 →K4A8G085WB-BCPB
✅ 드롭인 ⚠️ 사양 미검증✓ 재고 있음
$13.7813 / 개
데이터시트 보기 →K4A8G045WB-BCRC 최대 정격 & 전기적 특성
| 메모리 유형 | DDR4 SDRAM |
| Density | 8 Gb |
| 메모리 구성 | 2G x 4 |
| Speed | 2400 Mbps |
| Supply Voltage (VDD/VDDQ) | 1.2 V |
| Process Technology | Samsung B-die |
| 인터페이스 | CMOS, differential clock (CK/CK#) |
| Refresh Cycles | 8192 |
| Maximum Supply Current | 211.7 mA |
| 동작 온도 | 0 C to 85 C |
| 패키지 | 78-ball FBGA (PBGA78) |
| Terminals | 78 |
| 실장 유형 | Surface Mount |
| Key DDR4 Features | Posted CAS, Programmable CWL, Internal (Self) Calibration, ODT, Asynchronous Reset |
| DLL Mode | Timing specified for DLL-enabled operation |
| RoHS 상태 | Compliant |
K4A8G045WB-BCRC 78-ball fbga (pbga78) 핀 구성 가이드
K4A8G045WB-BCRC(78-ball fbga (pbga78) 패키지)의 핀 구성입니다. 이 디지털 IC에는 GPIO, 통신 인터페이스(UART, SPI, I2C), 전원 핀이 포함되어 있습니다. 대체 핀 기능과 구성 옵션은 제조사 데이터시트를 참조하십시오. 임베디드 시스템 설계와 PCB 레이아웃에 필수적입니다.
다음에 대한 상세 핀아웃 데이터 없음: K4A8G045WB-BCRC.
다음을 참조하십시오: 데이터시트 전체 핀 구성은 다음을 참조하십시오.
일반적인 애플리케이션
K4A8G045WB-BCRC 적합 용도: 6 애플리케이션s: Server Memory Modules (RDIMM/LRDIMM), Desktop PC UDIMM Memory, Networking and Communication Equipment, Data Center and Cloud Computing Platforms, Industrial PCs and Embedded Controllers, High-Performance Computing (HPC) Accelerator Boards.
Server Memory Modules (RDIMM/LRDIMM)
The K4A8G045WB-BCRC's x4 organization is the standard building block for ECC-protected server DIMMs, where 18 x4 devices form a 72-bit bus (64 data + 8 ECC) and enable single-device data correction on server platforms. Its 8Gb B-die density and 2400 Mbps speed deliver high capacity per module at DDR4-2400 operating points, while on-die termination and internal self-calibration maintain signal integrity across the heavily loaded fly-by topology of registered modules. The 1.2V VDD/VDDQ rails reduce module power versus DDR3 by roughly 20%, improving data center energy efficiency. Designers should follow the RDIMM register and PMIC sequencing requirements alongside the Samsung DDR4 timing tables, which are specified for DLL-enabled operation.
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Desktop PC UDIMM Memory
For desktop UDIMMs, the K4A8G045WB-BCRC provides 8Gb per device, allowing 8GB modules with eight x4 dies or 16GB dual-rank designs. The 2400 Mbps speed grade matches mainstream DDR4-2400 JEDEC operating points used by Intel and AMD desktop platforms, and the asynchronous reset and programmable CWL features simplify controller initialization. Its B-die process is known for strong overclocking headroom and tight timing tolerance, which benefits performance-oriented memory designs. Layout teams should decouple VDD and VDDQ with multiple 0402/0603 ceramics per device and length-match DQ/DQS within each nibble lane as required by x4 organization. The 0 C to 85 C commercial range fits typical desktop ambient conditions.
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Networking and Communication Equipment
Switch, router, and firewall control planes use x4 DDR4 for ECC-protected buffering and lookup tables. The K4A8G045WB-BCRC supplies 8Gb per device with 2400 Mbps bandwidth, sufficient for packet buffer and flow-table workloads on merchant silicon and network processors. On-die termination reduces external termination component count on point-to-point point-to-multipoint buses typical of networking boards, and posted CAS addressing improves command bus efficiency. The 78-ball FBGA footprint fits the dense memory arrays used on 6-8 layer PCBs. Verify the commercial 0 C to 85 C temperature rating against the equipment environmental spec, and follow controlled-impedance (approximately 40 ohm) trace routing per DDR4 layout guidelines.
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Data Center and Cloud Computing Platforms
Cloud server platforms demand maximum memory capacity per socket; the K4A8G045WB-BCRC's 8Gb x4 organization enables the highest device counts and total capacity per module, and x4 devices leverage SDDC error correction to improve RAS characteristics. At 2400 Mbps and 1.2V, the device balances bandwidth against the thermal budget of dense 1U/2U chassis, with maximum supply current of 211.7 mA per die simplifying power provisioning. Samsung's internal self-calibration supports reliable operation across process, voltage, and temperature variation common in always-on data center environments. Designers must provision VPP (2.5V) and VDD/VDDQ rails and implement the JEDEC DDR4 training sequence for link initialization.
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Industrial PCs and Embedded Controllers
Industrial PCs, test instruments, and automation controllers use DDR4 SODIMM or solder-down memory; the K4A8G045WB-BCRC suits solder-down and module designs requiring 8Gb density with ECC-grade x4 organization. The asynchronous reset input allows the host to reset the DRAM independently during brown-out recovery, a valuable feature in industrially noisy power environments, and ODT plus self-calibration maintain margins across wide ambient swings. Note that this BCRC grade is rated 0 C to 85 C; for extended temperature requirements select industrial-grade Samsung variants such as the K4A8G085WB-BICR. Follow DDR4 length-matching rules (DQ/DQS matched within the nibble, fly-by for address/command) on the carrier PCB.
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High-Performance Computing (HPC) Accelerator Boards
HPC and accelerator cards require dense, high-bandwidth local memory beside the compute engine. The K4A8G045WB-BCRC's 8Gb B-die at 2400 Mbps allows multi-rank arrays delivering tens of GB/s per channel, and the x4 organization provides fine-grained ECC suitable for scientific workloads where silent data corruption is unacceptable. B-die process parts are known for stable timing margins at DDR4-2400, supporting multi-rank signal integrity on high-layer-count accelerator PCBs. Power designers should provision separate VDD/VDDQ plane filtering with bulk plus high-frequency ceramic decoupling near each device, since aggregate current scales with device count. Confirm thermal design keeps junction temperatures within the 85 C commercial limit under sustained compute loads.
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추천 제품 요약
엔지니어링 참조 데이터: K4A8G045WB-BCRC — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | K4A8G045WB-BCPB | K4A8G085WB-BCRC | K4A8G165WB-BCRC | K4A8G085WB-BICR |
|---|---|---|---|---|---|
| Package | 78-ball FBGA | 78-ball FBGA - same | 78-ball FBGA - same | 78-ball FBGA - same | 78-ball FBGA - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Density | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Organization | 2G x 4 | 2G x 4 | 1G x 8 | 512M x 16 | 1G x 8 |
| Speed | 2400 Mbps | 2400 Mbps | 2400 Mbps | 2400 Mbps | 2666 Mbps class (BI grade) |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Temperature Range | 0 C to 85 C | 0 C to 85 C | 0 C to 85 C | 0 C to 85 C | Industrial grade (extended) |
| Process Technology | B-die | B-die | B-die | B-die | B-die (industrial) |
주요 차별점
- x4 organization enables full ECC and SDDC (vs K4A8G085WB-BCRC)
- Highest capacity per device on 78-FBGA footprint (vs K4A8G165WB-BCRC)
- B-die process timing headroom (vs K4A8G085WB-BICR)
설계 노트
Provide separate VDD (core) and VDDQ (I/O) 1.2V rails plus VPP (2.5V) per the DDR4 standard. The K4A8G045WB-BCRC draws up to 211.7 mA maximum supply current per die, so provision the rail for total device count with margin (estimate: 8 devices x 211.7 mA x 1.2V is roughly 2 W worst-case - this is an estimated budget, verify against your controller's utilization pattern). Decouple each device with at least four 100 nF ceramics plus local bulk capacitance; keep the VDDQ plane low-impedance to prevent simultaneous-switching noise from corrupting DQ eyes at 2400 Mbps.
Route DQ/DQS/DM as tightly matched nibble groups (x4 organization means 4 DQ per DQS pair) with length matching inside each group; route address/command in fly-by topology with on-die termination enabled through the ODT pin. Use approximately 40 ohm controlled-impedance traces for point-to-point segments and reference signals to continuous ground planes. At DDR4-2400, run the memory controller's write-leveling and read-training sequence after every reset, since the Samsung datasheet specifies all AC timing in DLL-enabled mode only.
Do not assume cross-organization interchange: the x4 ballout of K4A8G045WB-BCRC differs from x8 (K4A8G085WB) and x16 (K4A8G165WB) parts despite the identical 78-ball footprint, so a physical footprint match is not a functional match. Also confirm the refresh requirement (8192 cycles per refresh window) is met by the controller under elevated temperature - at 85 C ambient, temp-compensated self-refresh or accelerated refresh (2x) may be required. Finally, source only through authorized channels; B-die DDR4 is a common target for remarked and counterfeit devices.
규정 준수 정보
RoHS certification stated by distributor listing (Lisleapex: FBGA-78 DRAM with RoHS certification). Samsung DDR4 FBGA packages are Pb-free; REACH and conflict-minerals status not stated in provided data.
