CY14V104LA-BA45XIT - 4Mb nvSRAM 45ns 3.3V | Infineon | Industrial
부품 번호: CY14V104LA-BA45XIT ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $6.85 | $6.85 |
| 10 | $6.2 | $62.00 |
| 100 | $5.55 | $555.00 |
| 500 | $5.05 | $2,525.00 |
| 1,000 | $4.6 | $4,600.00 |
CY14V104LA-BA45XIT 개요
An nvSRAM (non-volatile SRAM) is a memory device that combines the unlimited read/write endurance and fast access of standard static RAM with non-volatile data storage. In the memory hierarchy, nvSRAM sits alongside EEPROM and Flash as a non-volatile memory IC, but unlike EEPROM it offers SRAM-speed reads and writes on every access. In the CY14V104LA family, the non-volatile element is a SONOS-based quantum-trap storage cell, and data is automatically stored to the non-volatile array on power loss without any external intervention.
Key features of the CY14V104LA include 45 ns random access timing suitable for zero-wait-state parallel buses, unlimited SRAM read/write endurance, and automatic non-volatile STORE operations on power-down plus automatic RECALL on power-up. The device supports hardware STORE via an external pin and software-initiated stores, with data retained in the non-volatile cells for a long archival period specified in the manufacturer datasheet.
Technically, the device reads and writes like a standard asynchronous SRAM while internally managing charge and data transfer to the SONOS non-volatile elements. Because storage occurs automatically during power fail detection, no external supervisory circuitry or battery is required - a key advantage over battery-backed SRAM solutions.
Typical applications include industrial PLC data logging, network router configuration storage, metering and e-meter data retention, aerospace and avionics black-box buffers, and robotics control tables where frequent high-speed writes and instant power-fail retention are both required.
Design consideration: budget for the STORE cycle time after a hardware or software STORE command; the device becomes unavailable during non-volatile storage, so system firmware should sequence writes accordingly.
This page synthesizes distributor pricing, drop-in same-family alternatives, and practical design notes not found in the manufacturer datasheet.
드롭인 대체품: CY14V104LA-BA45XIT — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: CY14V104LA-BA45XIT (동일 폼 팩터 및 풋프린트) — 차이점: Access Time, Density, Interface, Memory Type, Operating Temperature.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
CY14V104LA-BA45XI
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
CY14V104LA-BA45XIES
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
CY14V104NA-BA45XIT
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
CY14B104LA-BA45XIT
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
CY14B104NA-BA45XI
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
CY14V104LA-BA45XIT 사양
| 메모리 유형 | nvSRAM (Non-Volatile SRAM) |
| 메모리 크기 | 4 Mbit |
| 메모리 구성 | 512K x 8 |
| 인터페이스 | Parallel |
| Access Time | 45 ns |
| Supply Voltage Range | 3 V (min VCC 2.7 V typical class, max 3.6 V) |
| Max Operating Voltage | 3.6 V |
| 실장 유형 | Surface Mount |
| 패키지 | 48-FBGA (6 x 10 mm, 1.20 mm height) |
| 동작 온도 | -40C to +85C |
| Read/Write Endurance | Unlimited (SRAM mode) |
| Automotive Qualified | No (industrial grade) |
| Memory Category | NVRAM, NVSRAM, SRAM Chip |
| Density | 4096 kbits |
| Number of Words | 128 k |
| Bits per Word | 8 bits |
| RoHS 상태 | RoHS Compliant |
| Packaging | Tape & Reel (T/R) |
CY14V104LA-BA45XIT 48-fbga (6 x 10 mm, 1.20 mm height) 핀 구성 가이드
CY14V104LA-BA45XIT(48-fbga (6 x 10 mm, 1.20 mm height) 패키지)의 핀 구성입니다. 핀 번호, 기능, 연결 다이어그램은 제조사 데이터시트에 정의되어 있습니다. 정확한 풋프린트와 솔더링 지침은 해당 문서를 참조하십시오.
다음에 대한 상세 핀아웃 데이터 없음: CY14V104LA-BA45XIT.
다음을 참조하십시오: 데이터시트 전체 핀 구성은 다음을 참조하십시오.
일반적인 애플리케이션
CY14V104LA-BA45XIT 적합 용도: 6 애플리케이션s: Industrial PLC Data Logging, Smart Metering Data Retention, Networking Equipment Configuration Storage, Aerospace and Avionics Flight Data Buffers, Robotics Control Table Storage, Battery-Backed SRAM Replacement Retrofit.
Industrial PLC Data Logging
The CY14V104LA-BA45XIT fits industrial PLC and process-control data logging because its 45 ns asynchronous SRAM interface supports rapid cyclic logging while automatic power-fail STORE guarantees that the last records survive brownouts and emergency shutdowns common on factory floors. A PLC can write fault codes and process snapshots into the 512K x 8 array thousands of times per second without any endurance penalty, since SRAM-mode writes are unlimited - unlike EEPROM loggers limited to roughly one million cycles per cell. Placed on the processor's local memory bus with standard chip-enable decoding, the device RECALLs its entire non-volatile image automatically at power-up, restoring the fault history table in microseconds. Budget for the STORE cycle after explicit software stores, since the device is briefly unavailable during non-volatile storage.
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Smart Metering Data Retention
Electricity, gas, and water meters require both frequent tariff-table updates and mandatory retention of billing data through outages - exactly the profile of the CY14V104LA-BA45XIT. Its 3.0 V to 3.6 V operation matches standard 3.3 V meter electronics, and the -40C to +85C industrial range covers unconditioned outdoor and pole-mounted enclosures. Tariff registers, load profiles, and tamper event counters can be updated continuously at SRAM speed, while the automatic STORE on power-down using the VCAP storage capacitor preserves all data when the meter is de-energized, without any lithium battery that would create transport, lifetime, and disposal liabilities. The 4 Mbit density accommodates years of interval-load data, and the RoHS-compliant 48-FBGA keeps the meter PCB compact.
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Networking Equipment Configuration Storage
Routers, switches, and industrial network appliances use the CY14V104LA-BA45XIT as a fast working store for configuration data, MAC address tables, and boot parameters. The 45 ns access time allows the management CPU or FPGA to read boot configuration immediately after power-up RECALL, shortening device bring-up versus Flash-based schemes that require slow sequential reads. Configuration is typically written on every CLI or SNMP change at SRAM speed with zero wear-out concern, so no wear-leveling firmware is needed. The 512K x 8 parallel organization maps cleanly onto legacy bus architectures common in network line cards, and the automatic power-fail STORE protects against corruption when a rack unit loses power abruptly - a daily event in data centers. Verify VCAP capacitor placement close to the FBGA balls for reliable STORE completion.
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Aerospace and Avionics Flight Data Buffers
Avionics systems log flight parameters, fault snapshots, and mission data that must survive every power transition, and the CY14V104LA-BA45XIT provides an SRAM-speed buffer with built-in non-volatility for this role. Its unlimited write endurance supports continuous high-rate acquisition - telemetry can be written at bus speed every cycle - while automatic STORE on power loss guarantees no data is lost when avionics buses are de-powered between sorties. The industrial -40C to +85C rating suits many avionics bay environments, though designers should note the part is not AEC-Q100 or DSCC-qualified, so program-level qualification must be arranged. The 4 Mbit (512K x 8) density covers typical flight-data parameter sets, and the 6 x 10 mm FBGA package minimizes mass and board area in size-constrained LRU chassis.
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Robotics Control Table Storage
Industrial robots and CNC controllers store motion trajectory tables, calibration offsets, and coordinate systems that are read every servo cycle and rewritten during teach-in - a pattern the CY14V104LA-BA45XIT serves perfectly. Calibration offsets can be refined hundreds of times per commissioning session without any endurance limit, and the controller can read compensation tables at 45 ns with zero wait states, preserving servo loop determinism. When the robot cell is powered down, the automatic STORE captures the latest table state, so recalibration after maintenance power cycles is unnecessary. The 512K x 8 organization holds multiple complete kinematic parameter sets, and operation to +85C covers drive cabinets near motors. Software should use hardware STORE deliberately between motion jobs rather than relying solely on power-fail capture for critical updates.
추천
Battery-Backed SRAM Replacement Retrofit
Legacy designs using battery-backed SRAM modules can be retrofitted with the CY14V104LA-BA45XIT to eliminate lithium cells entirely. Because the device presents a standard asynchronous 512K x 8 SRAM interface with 45 ns timing, it typically drops onto existing SRAM footprints when re-balled or designed into a refreshed 48-FBGA layout, with only the VCAP capacitor added near the supply pins. This removes battery monitoring firmware, battery-socket contact failures, and hazardous-material shipping restrictions while improving data security - SONOS non-volatile cells retain data without the volatile SRAM exposure window of a depleted battery. Cost of ownership drops since no battery replacement service interval is required. Evaluate the STORE cycle time in your power-fail sequencing so the system does not access the device during a software-initiated STORE.
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추천 제품 요약
엔지니어링 참조 데이터: CY14V104LA-BA45XIT — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | CY14V104LA-BA45XI | CY14V104LA-BA45XIES | CY14V104NA-BA45XIT | CY14B104LA-BA45XIT |
|---|---|---|---|---|---|
| Package | 48-FBGA (6 x 10 mm) | 48-FBGA (6 x 10 mm) - same | 48-FBGA (6 x 10 mm) - same | 48-FBGA (6 x 10 mm) - same | 48-FBGA (6 x 10 mm) - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies (Rochester) | Infineon Technologies | Infineon Technologies |
| Memory Size | 4 Mbit (512K x 8) | 4 Mbit (512K x 8) | 4 Mbit (512K x 8) | 4 Mbit (512K x 8) | 4 Mbit (512K x 8) |
| Access Time | 45 ns | 45 ns | 45 ns | 45 ns | 45 ns |
| Supply Voltage Class | 3.0 V to 3.6 V (3.3 V) | 3.0 V to 3.6 V | 3.0 V to 3.6 V | 3.0 V to 3.6 V (V-series) | 2.0 V class (B-series) |
| Operating Temperature | -40C to +85C | -40C to +85C | -40C to +85C | -40C to +85C | -40C to +85C |
| Automotive Qualified | No | No | No | No | No |
| Packing | Tape & Reel | Tray | Rochester extended-life supply | Tape & Reel | Tape & Reel |
주요 차별점
- Battery-free non-volatility (vs Battery-backed SRAM modules)
- Unlimited write endurance (vs EEPROM (e.g. 1M-cycle parts))
- Extended-life supply option (vs CY14V104LA-BA45XIES)
- Trade-off: 3.3 V rail only (vs CY14B104LA-BA45XIT)
설계 노트
The VCAP pin storage capacitor supplies the energy for the automatic STORE operation during power fail. Use exactly the capacitance value and type specified in the current Infineon CY14V104LA datasheet (do not substitute a larger or smaller value, and do not add other components to this node). Place it directly at the VCAP ball with a short, wide return path to ground. Without a correct VCAP, a power loss can leave the non-volatile array with stale data even though the SRAM content was valid.
The device is unavailable during a STORE operation (hardware or software initiated). Firmware must poll the STORE status or wait the datasheet tSTORE interval after issuing a software STORE before issuing further memory accesses, and power-supply sequencing must not remove VCC during a STORE. Also note that excessive continuous power-fail/power-up cycling faster than the specified STORE plus RECALL recovery time can stress the non-volatile mechanism - apply a brownout delay of a few hundred milliseconds on the 3.3 V rail for robustness.
The 48-FBGA (6 x 10 mm, 1.20 mm height) uses standard 1.0 mm pitch BGA land patterns; fan out address and data bus on inner layers with via-in-pad or dog-bone escapes. Add 0.1 uF ceramic decoupling as close as possible to the VCC balls, plus bulk 10 uF on the rail to support the charge draw during STORE. Keep address lines length-matched loosely (within 10 mm) to avoid skew at 45 ns access timing - this is not a high-speed DDR interface, but consistent trace lengths simplify timing analysis.
Estimated: at a typical nvSRAM ICC of a few tens of milliamps on a 3.3 V rail, static power is roughly 50-100 mW, so no thermal management is required in the 48-FBGA package at industrial ambient temperatures. Verify actual ICC values in the current Infineon datasheet for your temperature grade, and budget the additional transient energy drawn from VCC and VCAP during STORE when sizing the bulk supply capacitance.
규정 준수 정보
Package explicitly listed as 'ROHS COMPLIANT, FBGA-48' in digchip specification data. Automotive Qualified: No per digchip/datasheet parameters. REACH, halogen-free and conflict-minerals declarations not present in retrieved data - confirm on Infineon compliance portal.
