EDB1332BDBH-1DAUT-F-R - 1Gbit LPDDR2 SDRAM 533MHz | Micron
부품 번호: EDB1332BDBH-1DAUT-F-R ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $4.95 | $4.95 |
| 10 | $4.55 | $45.50 |
| 100 | $4.1 | $410.00 |
| 500 | $3.75 | $1,875.00 |
| 1,000 | $3.4 | $3,400.00 |
EDB1332BDBH-1DAUT-F-R 개요
LPDDR2 (Low Power Double Data Rate 2) is a JEDEC-defined SDRAM family optimized for mobile and embedded systems where power efficiency and bandwidth per watt matter more than absolute peak throughput. Within the memory hierarchy, LPDDR2 sits below DDR4 in peak bandwidth but offers significantly lower standby and operating power, a wide clock range (3 MHz to 533 MHz), and CA (command/address) pin multiplexing that reduces pin count versus classic LPDDR1. As a component category, this device belongs to the DRAM -> SDRAM -> mobile LPDDR2 -> memory IC taxonomy.
Key features of this part include the 1.14 V minimum (1.2 V typical) core supply per LPDDR2-S4 standards, a 32-bit wide data bus that simplifies memory subsystem design for microcontrollers and application processors, and the compact 134-VFBGA footprint suited to space-constrained boards. The -R suffix denotes tape-and-reel delivery (factory pack quantity 1000) for automated SMD/SMT assembly.
Technically, the device uses a CMOS core with internally refreshed banks, self-refresh and power-down modes that are essential for battery-powered designs, and an extended industrial temperature range of -40C to +125C, making it suitable beyond consumer mobile into industrial embedded platforms.
Typical applications include battery-powered industrial HMI panels, embedded Linux single-board computers, telematics and data loggers, and portable instrumentation that pair an LPDDR2-capable SoC (such as NXP i.MX 6Solo/6DualLite families) with 32-bit-wide DRAM.
When designing with this device, follow the datasheet power-ramp and ZQ calibration requirements and place VREFCA/VRREF ball decoupling exactly as specified; LPDDR2 is sensitive to supply ramp order and reference voltage drift.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
드롭인 대체품: EDB1332BDBH-1DAUT-F-R — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: EDB1332BDBH-1DAUT-F-R (동일 폼 팩터 및 풋프린트) — 차이점: Memory Type, Package.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
EDB1332BDBH-1DAAT-F-R
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
EDB1332BDBH-1DAUT-F-D
✅ 드롭인✓ 재고 있음
$2.16 / 개
데이터시트 보기 →EDB1332BDBH-1DAAT-F-D
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
EDB1332BDBH-1DAUT-F-D
✅ 드롭인✓ 재고 있음
$2.16 / 개
데이터시트 보기 →EDB1332BDBH-1DAUT-F-R 최대 정격 & 전기적 특성
| 메모리 유형 | SDRAM Mobile - LPDDR2 |
| 메모리 크기 | 1 Gbit |
| 메모리 구성 | 32M x 32 |
| 데이터 버스 폭 | 32 bit |
| Clock Frequency | 533 MHz |
| 인터페이스 | Parallel |
| Supply Voltage - Min | 1.14 V |
| Supply Voltage - Typ | 1.2 V |
| Operating Temperature - Min | -40 C |
| Operating Temperature - Max | +125 C |
| 패키지 | 134-VFBGA (10 mm x 11.5 mm) |
| JEDEC Package Code | R-PBGA-B134 |
| 장착 스타일 | SMD/SMT |
| Factory Pack Quantity | 1000 |
| Packaging | Tape & Reel (-R suffix) |
| Technology | CMOS |
| RoHS 상태 | Compliant |
EDB1332BDBH-1DAUT-F-R r-pbga-b134 핀 구성 가이드
EDB1332BDBH-1DAUT-F-R(r-pbga-b134 패키지)의 핀 구성입니다. 이 디지털 IC에는 GPIO, 통신 인터페이스(UART, SPI, I2C), 전원 핀이 포함되어 있습니다. 대체 핀 기능과 구성 옵션은 제조사 데이터시트를 참조하십시오. 임베디드 시스템 설계와 PCB 레이아웃에 필수적입니다.
다음에 대한 상세 핀아웃 데이터 없음: EDB1332BDBH-1DAUT-F-R.
다음을 참조하십시오: 데이터시트 전체 핀 구성은 다음을 참조하십시오.
일반적인 애플리케이션
EDB1332BDBH-1DAUT-F-R 적합 용도: 6 애플리케이션s: Embedded Linux Single-Board Computers, Industrial HMI Panels and Operator Terminals, Telematics and Fleet Data Loggers, Portable Battery-Powered Instruments, IoT Gateways and Edge Aggregation Nodes, Medical Diagnostic Handhelds and Monitors.
Embedded Linux Single-Board Computers
The EDB1332BDBH-1DAUT-F-R provides 1 Gbit of LPDDR2 (32M x 32) that matches SoCs such as the NXP i.MX 6Solo/6DualLite, which boot embedded Linux from a 32-bit-wide LPDDR2 bus at up to 533 MHz. In this role the DRAM carries the kernel, root filesystem cache, and application working set, so the 533 MHz clock on a 32-bit bus delivers the bandwidth those processors need for HMI rendering and networking stacks. The 134-VFBGA footprint keeps routing short for DQS/DQ fly-by timing. Use 10k-ohm pull references and follow the datasheet ZQ calibration and reset-sequencing requirements in the bootloader's DCD table to guarantee first-boot reliability.
추천
Industrial HMI Panels and Operator Terminals
Industrial touch panels require memory that survives -40C cold starts and 85C cabinet temperatures; the EDB1332BDBH-1DAUT-F-R's -40C to +125C range gives substantial margin. Its 1 Gbit density supports graphics frame buffers for 800x480 or 1024x600 LCDs driven by LPDDR2-capable SoCs, while the LPDDR2 self-refresh mode lets the panel suspend between touch events to meet low idle-power targets. The 32M x 32 organization simplifies layout because a single package completes the 32-bit bus, avoiding the timing skew of two 16-bit parts in parallel. Place the DRAM within 40 mm of the SoC and route DQ/DQS as length-matched groups per Micron's LPDDR2 layout guidelines.
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Telematics and Fleet Data Loggers
Vehicle telematics units buffer GPS, CAN, and cellular data before upload; the EDB1332BDBH-1DAUT-F-R supplies the RAM working set for an LPDDR2 SoC while its extended temperature range accommodates engine-bay-adjacent mounting points. The 533 MHz clock rate and parallel 32-bit interface sustain continuous logging with AES encryption in software. Because these devices spend long periods in low-power state, LPDDR2 self-refresh preserves buffered data at microamp-scale DRAM current while the application processor sleeps. Designers should verify power-ramp order on the always-on 1.2 V rail and add bulk capacitance to handle automotive load-dump transients upstream of the regulator.
추천
Portable Battery-Powered Instruments
Handheld measurement instruments benefit from the EDB1332BDBH-1DAUT-F-R's combination of density and low standby power: 1 Gbit holds calibration data, waveform buffers, and UI assets, while LPDDR2 power-down modes minimize drain between measurements. The single-package 32-bit bus at up to 533 MHz gives responsive sampling displays without the complexity of dual-chip 16-bit memory. Its 10 mm x 11.5 mm 134-VFBGA fits compact handheld PCBs. Battery-life optimization should use the datasheet self-refresh current figure and budget controller-side CKE management; deep power-down firmware policies typically dominate instrument idle current more than the DRAM itself.
추천
IoT Gateways and Edge Aggregation Nodes
Smart-home and industrial IoT gateways aggregate wireless nodes and run protocol stacks (MQTT, Thread border-router duties) that exceed microcontroller SRAM; pairing an LPDDR2-capable SoC with the EDB1332BDBH-1DAUT-F-R provides the 1 Gbit working memory needed for TLS sessions and message queues. The 533 MHz parallel interface keeps latency low for bursty network traffic, and the -40C to +125C grade suits unconditioned enclosures. The 32M x 32 single-package organization reduces BOM count versus stacked memory. Follow Micron's VREFCA reference-resistor (240-ohm ±1%) layout guidance, since gateway boards often mix fast and slow signal nets near the DRAM.
추천
Medical Diagnostic Handhelds and Monitors
Portable medical devices such as vital-sign monitors and point-of-care analyzers need dependable memory across cold-chain transport and warm operating rooms; the EDB1332BDBH-1DAUT-F-R's -40C to +125C window covers both extremes. Its 1 Gbit LPDDR2 stores acquisition buffers and GUI assets for touchscreen interfaces, while self-refresh keeps patient-trend data in RAM during processor sleep states between measurements. The single 32M x 32 package shortens the memory bus, aiding EMC compliance in designs near RF sensing front-ends. Verify creepage and EMI segregation around the 134-VFBGA per applicable medical system standards, and confirm long-term supply via last-time-buy planning given this LPDDR2 generation's legacy status.
추천
추천 제품 요약
엔지니어링 참조 데이터: EDB1332BDBH-1DAUT-F-R — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | EDB1332BDBH-1DAAT-F-R | EDB1332BDBH-1DAUT-F-D | EDB1332BDBH-1DAAT-F-D | EDB1332BDBH-1DAUT-F |
|---|---|---|---|---|---|
| Package | 134-VFBGA (10x11.5) | 134-VFBGA - same | 134-VFBGA - same | 134-VFBGA - same | 134-VFBGA - same |
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology |
| Memory Size | 1 Gbit | 1 Gbit | 1 Gbit | 1 Gbit | 1 Gbit |
| Organization | 32M x 32 | 32M x 32 | 32M x 32 | 32M x 32 | 32M x 32 |
| Max Clock Frequency | 533 MHz | 533 MHz | 533 MHz | 533 MHz | 533 MHz |
| Packaging Delivery | Tape & Reel (-R) | Tape & Reel (-R) | Tray (-D) | Tray (-D) | Base order code |
| Supply Voltage | 1.14 V min / 1.2 V typ | 1.14 V min / 1.2 V typ | 1.14 V min / 1.2 V typ | 1.14 V min / 1.2 V typ | 1.14 V min / 1.2 V typ |
| RoHS | Compliant | Compliant | Compliant | Compliant | Compliant |
주요 차별점
- Extended industrial temperature range (vs EDB1332BDBH-1DAAT-F-R)
- Single-package 32-bit bus (vs Dual 16-bit LPDDR2 build-up)
- Tape-and-reel automation readiness (vs EDB1332BDBH-1DAUT-F-D)
설계 노트
LPDDR2 requires a controlled 1.14 V to 1.2 V core rail and sequenced power-ramp: VDD/VDDQ must ramp before or with VDDQ_DQ and the reset (RESET_n) must remain low until supplies stabilize, per the Micron LPDDR2 datasheet initialization sequence. Estimated: ensure the PMIC's DDR LDO (e.g., a PF-series i.MX PMIC) ramps the 1.2 V rail within the datasheet-specified ramp rate; violating ramp order can latch up the die or corrupt initialization, requiring a full POR before the memory responds to MRR/MRW commands.
Route the 32-bit DQ bus with per-byte DQS strobes as length-matched groups; keep all memory traces under 40-50 mm from the 134-VFBGA to the SoC ball field. Use a solid, unbroken reference plane under the DQ/DQS/CA nets. Place the VREFCA divider (240-ohm ±1% resistor pair) close to the ball with a dedicated 0.1 uF decoupling capacitor; reference-voltage noise directly degrades CA timing margin. Micron's LPDDR2 layout application guidance and reference-design footprints should be used verbatim for the landing pattern.
The -R suffix is packaging (tape-and-reel), not a silicon revision - verify temp grade by the -A (standard) vs -U (extended +125C) position before releasing BOMs for industrial builds; substituting an A-grade part into a +105C enclosure design is a silent failure mode. Also confirm supply continuity: this LPDDR2 generation is legacy-classified, so implement last-time-buy monitoring and consider qualifying the tray (-D) variant as a second sourcing path.
For 533 MHz operation, apply on-die-termination and drive-strength settings via Mode Register Write in the bootloader, and simulate CA net reflections if stub lengths exceed 3 mm. Estimated: with typical mobile-DRAM I/O drive at 533 MHz, unterminated CA stubs above roughly 5 mm show reflections that eat setup margin at -40C fast-corner conditions; keep CKE/CS routed with series termination per the SoC hardware design guide.
규정 준수 정보
RoHS compliance reported by distributor listings (AtlasChip, Win Source). Lead-free package indicated by -F suffix. REACH, halogen-free and conflict-minerals status must be confirmed from Micron's official product-compliance documents.
