IDM08G120C5XTMA1 - 1200V 8A SiC Schottky Diode | Infineon CoolSiC G5
부품 번호: IDM08G120C5XTMA1 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $3.85 | $3.85 |
| 10 | $3.45 | $34.50 |
| 100 | $2.92 | $292.00 |
| 500 | $2.55 | $1,275.00 |
| 1,000 | $2.21 | $2,210.00 |
IDM08G120C5XTMA1 개요
A Schottky diode is a unipolar semiconductor device that conducts via majority carriers at a metal-semiconductor junction, producing a low forward voltage drop and negligible reverse-recovery charge. Silicon-carbide (SiC) Schottky diodes extend this topology to high blocking voltages that conventional silicon PN-junction rectifiers cannot reach efficiently. Within the system hierarchy, the IDM08G120C5XTMA1 sits as: Schottky diode -> rectifier -> discrete power semiconductor -> power-electronic component. The thin-wafer technology from Generation 2 has been combined with a new merged-pn junction to improve surge-current handling while preserving the zero-reverse-recovery behavior that defines SiC technology.
Key features include a 1200 V repetitive peak reverse voltage (VRRM), 8 A average forward current (IF(AV)) at TC = 150 °C, a typical forward voltage (VF) around 1.5 V at 8 A and 25 °C, and junction-temperature operation from -55 °C to +175 °C. The merged-pn junction eliminates the conventional Schottky trade-off between low leakage and high surge capability, while the TO-252 real-2-pin package provides a creepage distance compatible with 1200 V systems and a low junction-to-case thermal resistance (Rth(j-c)) below 1.5 K/W.
The Infineon CoolSiC G5 architecture uses a wide-bandgap SiC substrate (bandgap ~3.26 eV versus 1.12 eV for silicon) and a barrier-metal Schottky contact optimized to minimize conduction losses at high current densities. The merged-pn structure behaves like a pure Schottky diode during normal conduction but engages an internal PN layer during reverse-bias stress, suppressing leakage and improving robustness against surge events. The DPAK real-2-pin footprint maximizes the die-to-PCB thermal path, allowing continuous high-current operation without forced-air cooling in well-designed layouts.
Typical applications include solar string inverters, industrial UPS and SMPS output rectifiers, on-board EV battery chargers (OBC), totem-pole bridgeless PFC stages, and industrial motor drives. The diode is equally suited to freewheeling positions in IGBT half-bridges where its zero reverse recovery eliminates dead-time losses.
When designing with the IDM08G120C5XTMA1, observe the recommended PCB land pattern for the PG-TO252-2 DPAK footprint to preserve creepage and clearance. Use thermal vias under the exposed tab to keep junction temperature below 150 °C at full load, and consider the IFSM rating when sizing upstream fuses or designing inrush-tolerant circuits.
This page consolidates distributor pricing, drop-in alternatives and design considerations not found in the standalone datasheet PDF.
드롭인 대체품: IDM08G120C5XTMA1 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
IDM08G120C5
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
IDM08G120C5XTMA2
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
STPSC8H12
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
NDSH08120A
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
C4D08120E
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
LTT8S12S5
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
IDM08G120C5XTMA1 최대 정격 & 전기적 특성
| Manufacturer | Infineon Technologies |
| Product Family | CoolSiC Schottky Diode Generation 5 |
| Diode Type | Silicon Carbide (SiC) Schottky Barrier Diode |
| Repetitive Peak Reverse Voltage (VRRM) | 1200 V |
| Average Forward Current (IF(AV)) | 8 A (TC = 150 °C) |
| Forward Voltage (VF) typ. | 1.5 V at 8 A, 25 °C |
| Reverse Recovery Charge (Qrr) | 0 nC (zero reverse recovery - SiC) |
| Junction Temperature Range (TJ) | -55 °C to +175 °C |
| 패키지 | PG-TO252-2 (DPAK real-2-pin) |
| 실장 유형 | Surface Mount |
| Configuration | Single Diode |
| RoHS 상태 | Compliant |
| Lead-Free | Yes |
IDM08G120C5XTMA1 핀 구성
| 핀 1 | A — Anode (through-board lead) |
| 핀 2 | K — Cathode (through-board lead, internally connected to tab) |
| 핀 TAB | K — Cathode (exposed metal tab, primary thermal path) |
일반적인 애플리케이션
IDM08G120C5XTMA1 적합 용도: 6 애플리케이션s: Solar String Inverter Boost PFC, On-Board EV Battery Charger (OBC), Totem-Pole Bridgeless PFC, Industrial Motor Drive Rectifier, Telecom SMPS Output Rectifier, Uninterruptible Power Supply (UPS).
Solar String Inverter Boost PFC
The IDM08G120C5XTMA1 is well suited as the boost-diode in a 10 kW to 25 kW three-phase solar string inverter operating at 50 kHz to 100 kHz PFC. Its 1200 V VRRM comfortably exceeds the 1000 V DC-link voltage of an 800 V PV-string architecture, while its zero reverse-recovery charge eliminates the reverse-recovery losses that silicon ultrafast rectifiers incur at every switching cycle. Placed between the boost inductor and the DC-link capacitor, the diode reduces total PFC-stage losses by 30 to 50 percent compared with a 1200 V silicon rectifier, raising system efficiency above 99 percent and reducing heatsink mass.
추천
On-Board EV Battery Charger (OBC)
In an 11 kW to 22 kW on-board EV charger, the IDM08G120C5XTMA1 serves as the freewheeling rectifier on the secondary side of an LLC resonant converter fed from an 800 V bus. Its 175 °C maximum junction temperature provides ample thermal margin above the typical 130 °C operation point in liquid-cooled OBC enclosures, and its surface-mount PG-TO252-2 footprint allows automated assembly. The 1.5 V forward drop at 8 A keeps conduction losses below 12 W per diode, eliminating the need for forced-air cooling at the rectifier stage.
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Totem-Pole Bridgeless PFC
The IDM08G120C5XTMA1 functions in the slow-rectifier leg of a continuous-conduction-mode totem-pole bridgeless PFC fed from a 400 V to 800 V DC-link. SiC Schottky diodes are mandatory in this topology because silicon rectifiers would suffer severe reverse-recovery cross-conduction losses during the AC-line zero-crossing. The Infineon CoolSiC G5 merged-pn junction provides both low forward drop during conduction and high surge-current handling during start-up, ensuring reliable operation over the full -40 °C to +125 °C automotive temperature range.
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Industrial Motor Drive Rectifier
In a 10 kW to 50 kW industrial variable-frequency drive (VFD) the IDM08G120C5XTMA1 is used as the output freewheeling diode across the IGBT half-bridge to clamp inductive kickback during switching transients. Its 1200 V rating matches the typical 600 V to 750 V DC-bus of a three-phase 400 V AC or 480 V AC drive, and its zero reverse-recovery ensures clean, lossless transitions. The DPAK real-2-pin package provides the rugged mechanical mounting required for industrial environments with high vibration and thermal cycling.
추천
Telecom SMPS Output Rectifier
In a -48 V telecom rectifier module or a 380 V DC data-center supply, the IDM08G120C5XTMA1 serves as the secondary-side synchronous-rectifier emulating diode in an LLC or phase-shifted full-bridge topology. Its 1200 V rating provides headroom for 400 V to 800 V bus operation while its zero reverse-recovery simplifies dead-time control in the secondary rectifiers. At 100 kHz switching frequency, the SiC diode reduces rectifier-stage losses by up to 60 percent compared with a silicon ultrafast rectifier of equal rating.
추천
Uninterruptible Power Supply (UPS)
In a 5 kW to 20 kW double-conversion online UPS the IDM08G120C5XTMA1 is used in the inverter-stage freewheeling positions and in the battery-mode boost converter. Its 1200 V rating handles the 800 V DC-link and its high 175 °C junction-temperature rating ensures reliable operation when the UPS is operating at full rated load in an ambient of 40 °C to 50 °C inside a server-room enclosure. The DPAK footprint allows compact, high-density PCB layouts that maximize power density per cubic inch.
추천
추천 제품 요약
엔지니어링 참조 데이터: IDM08G120C5XTMA1 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | IDM08G120C5 | IDM08G120C5XTMA2 | STPSC8H12 | NDSH08120A |
|---|---|---|---|---|---|
| Package | PG-TO252-2 (DPAK real-2-pin) | PG-TO252-2 (DPAK real-2-pin) - same | PG-TO252-2 (DPAK real-2-pin) - same | PG-TO252-2 (DPAK real-2-pin) - same | PG-TO252-2 (DPAK real-2-pin) - same |
| Brand | Infineon | Infineon | Infineon | STMicroelectronics | onsemi |
| Repetitive Peak Reverse Voltage (VRRM) | 1200 V | 1200 V | 1200 V | 1200 V | 1200 V |
| Average Forward Current (IF(AV)) | 8 A | 8 A | 8 A | 8 A | 8 A |
| Forward Voltage VF (typ. at 8 A, 25 °C) | 1.5 V | 1.5 V | 1.5 V | 1.5 V | 1.45 V |
| Reverse Recovery Charge (Qrr) | 0 nC (SiC) | 0 nC | 0 nC | 0 nC | 0 nC |
| Maximum Junction Temperature | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C |
| Pinout Variant | Real-2-pin (DPAK) | Real-2-pin | Real-2-pin | Real-2-pin | Real-2-pin |
| Approx. Unit Price (qty 100, as of 2026-09-14) | USD 2.92 | USD 2.85 (slightly lower, bulk pack) | USD 2.92 (same) | USD 2.75 (cross-brand savings) | USD 2.80 (cross-brand savings) |
주요 차별점
- CoolSiC Generation 5 merged-pn junction improves surge-current capability without sacrificing reverse-recovery performance (vs STPSC8H12 (STMicroelectronics))
- Real-2-pin DPAK footprint maximizes creepage distance for 1200 V systems (vs C4D08120E (Wolfspeed, three-lead TO-252))
- Tape-and-reel packaging suffix (-TMA1) supports high-volume SMT assembly without re-tooling (vs IDM08G120C5 (tray pack))
설계 노트
Estimated: at 8 A continuous forward current and a typical forward voltage of 1.5 V (Tj = 25 °C), each IDM08G120C5XTMA1 dissipates roughly 12 W of conduction loss. Designers must provide a copper-pour area of at least 200 mm² on the cathode tab and a 4 x 4 array of 0.3 mm thermal vias under the exposed pad to keep the junction-to-ambient thermal resistance below 35 K/W. Without this thermal design the junction temperature can quickly exceed the 175 °C absolute maximum rating at full load, accelerating device degradation and compromising system reliability.
Use the recommended PG-TO252-2 (DPAK) land pattern from the Infineon application note with a minimum pad-to-pad clearance of 1.5 mm to preserve the 1200 V creepage and clearance required by IEC 60664-1 for pollution degree 2 environments. Route the anode and cathode traces on opposite sides of the package to minimize parasitic inductance that can cause ringing during reverse recovery. Add a snubber RC network (10 Ω + 1 nF) across the diode if the PCB layout cannot limit the stray inductance below 5 nH.
Do not substitute a conventional silicon 1200 V ultrafast rectifier such as the MUR-series in a SiC-targeted design: the silicon part will introduce reverse-recovery losses of 50 nC to 100 nC that defeat the efficiency goal of a SiC front-end. Also avoid running the diode above 90 percent of its IFSM rating during inrush events, as the merged-pn junction, while more robust than a pure Schottky, can still suffer thermal runaway if junction temperature exceeds 200 °C even briefly.
SiC Schottky diodes have very fast switching edges (dV/dt up to 50 kV/µs) which can excite parasitic resonances in the power loop. Use a Kelvin-source connection to the gate driver when paired with a SiC MOSFET, and keep the power-loop inductance below 10 nH by minimizing the loop area between the diode, the active switch and the DC-link capacitor. A 0.1 µF to 1 µF X7R ceramic decoupling capacitor placed within 5 mm of the diode's cathode tab further reduces high-frequency ringing and conducted EMI on the DC bus.
규정 준수 정보
RoHS and REACH compliance per Infineon product page. Halogen-free per Infineon Green Product designation. Not AEC-Q100 qualified at the part level; the IDM08G120C5 may be screened for automotive reliability by the customer if required for EV applications.
