STB40N60M2 - 650V 40A N-Channel Power MOSFET | STMicroelectronics
부품 번호: STB40N60M2 ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $3.42 | $3.42 |
| 10 | $3.08 | $30.80 |
| 100 | $2.74 | $274.00 |
| 500 | $2.47 | $1,235.00 |
| 1,000 | $2.19 | $2,190.00 |
STB40N60M2 개요
A Power MOSFET is a type of field-effect transistor optimized for high-power switching and amplification. It operates by controlling the flow of current through a semiconductor channel using an electric field, offering fast switching speeds and low on-resistance compared to bipolar transistors. Power MOSFETs are fundamental building blocks in power electronics, forming the basis of switch-mode power supplies, motor drives, and inverters. They are part of the broader category of discrete semiconductors, which also includes diodes, thyristors, and IGBTs.
Key features of the STB40N60M2 include a low on-resistance (RDS(on)) of typically 0.095 ohm, which minimizes conduction losses and improves overall efficiency. The device also offers a wide safe operating area (SOA) and is avalanche-rated, ensuring robustness in harsh operating conditions. Its fast switching characteristics, with typical rise and fall times in the nanosecond range, enable high-frequency operation, reducing the size of magnetic components in power converters.
The STB40N60M2 utilizes STMicroelectronics' MDmesh M2 technology, which combines a vertical structure with a deep trench gate to achieve low on-resistance and reduced gate charge. This technology enhances the device's figure of merit (FOM), balancing conduction and switching losses for optimal performance in hard-switching topologies. The device also features a built-in diode with fast recovery, reducing reverse recovery losses in bridge configurations.
Typical applications include switch-mode power supplies (SMPS), power factor correction (PFC) circuits, solar inverters, and motor control systems. In an SMPS, the STB40N60M2 can be used as the main switching element in a flyback or forward converter, where its high breakdown voltage and low on-resistance contribute to high efficiency and reliability. In PFC circuits, it enables near-unity power factor by switching at high frequency with minimal losses.
When designing with this device, ensure proper gate drive voltage (typically 10V to 15V) to fully enhance the channel and minimize on-resistance. Adequate heat sinking is essential, as power dissipation can be significant at high currents. The D2PAK package's exposed tab should be soldered to a large copper area for effective thermal management.
드롭인 대체품: STB40N60M2 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
STB40N60M2-EP
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
STB40N60M2-1
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
IPW60R040CFD7
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
FCH40N60
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
TK40A65W
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
STB40N60M2 최대 정격 & 전기적 특성
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 650 V |
| Continuous Drain Current (ID) at 25°C | 40 A |
| Continuous Drain Current (ID) at 100°C | 25 A |
| Pulsed Drain Current (IDM) | 160 A |
| Gate-Source Voltage (VGS) | ±25 V |
| On-Resistance (RDS(on)) | 0.095 ohm (typical) |
| Total Gate Charge (Qg) | 60 nC (typical) |
| Input Capacitance (Ciss) | 2200 pF (typical) |
| Output Capacitance (Coss) | 150 pF (typical) |
| Reverse Transfer Capacitance (Crss) | 10 pF (typical) |
| Power Dissipation (PD) | 250 W |
| 동작 온도 범위 | -55°C to +150°C |
| 패키지 | D2PAK (TO-263) |
| 실장 유형 | Surface Mount |
| RoHS 상태 | Compliant |
STB40N60M2 핀 구성
| 핀 1 | Gate — Gate drive input |
| 핀 2 | Drain — Drain connection (tab) |
| 핀 3 | Source — Source connection |
안전 동작 영역
일반적인 애플리케이션
STB40N60M2 적합 용도: 6 애플리케이션s: Switch-Mode Power Supplies (SMPS), Power Factor Correction (PFC), Solar Inverters, Motor Control, Electric Vehicle Chargers, Welding Equipment.
Switch-Mode Power Supplies (SMPS)
The STB40N60M2 is ideal for SMPS topologies such as flyback and forward converters. Its 650V breakdown voltage allows it to handle high input voltages, while the low on-resistance (0.095 ohm) minimizes conduction losses, improving efficiency. In a typical flyback converter, the MOSFET switches at frequencies up to 100 kHz, and its fast switching times reduce switching losses. The D2PAK package's low thermal resistance enables effective heat dissipation when mounted on a suitable copper area. Compared to IGBTs, the MOSFET offers faster switching and lower losses at moderate frequencies, making it a preferred choice for power supplies up to 500W.
추천
Power Factor Correction (PFC)
In boost PFC circuits, the STB40N60M2 operates at high switching frequencies (typically 50-100 kHz) to shape the input current waveform. Its low gate charge (60 nC) reduces gate drive losses, and the fast body diode minimizes reverse recovery losses. The 650V rating provides ample margin for the boosted output voltage (typically 400V). The device's avalanche ruggedness ensures reliability during transient overvoltage events. Using this MOSFET in a continuous conduction mode (CCM) PFC stage can achieve efficiency above 95%.
추천
Solar Inverters
The STB40N60M2 is suitable for DC-AC inverters in photovoltaic systems. Its high voltage rating (650V) accommodates the DC bus voltage from solar panels (typically up to 600V). The low on-resistance reduces conduction losses, improving overall system efficiency. In a full-bridge inverter, the MOSFET's fast switching enables high-frequency PWM, reducing the size of output filters. The device's thermal performance allows operation in outdoor environments with proper heatsinking. Compared to IGBTs, the MOSFET offers lower losses at lower power levels (up to 5kW), making it a cost-effective choice for residential solar inverters.
추천
Motor Control
In motor drives, the STB40N60M2 is used in the inverter stage to drive AC or BLDC motors. Its 40A current capability supports motors up to several kilowatts. The fast switching speed enables high-frequency PWM, reducing motor noise and improving control accuracy. The device's low on-resistance minimizes heat generation, allowing compact designs. In a three-phase inverter, six MOSFETs are used, and the STB40N60M2's avalanche rating ensures robustness during motor regeneration. The D2PAK package is suitable for PCB mounting with proper thermal vias.
추천
Electric Vehicle Chargers
The STB40N60M2 is used in on-board chargers for electric vehicles, where high efficiency and reliability are critical. Its 650V rating handles the AC input voltage (up to 480V) and the boosted DC bus. The low on-resistance reduces losses, improving charging efficiency and reducing cooling requirements. The device's fast switching enables high-frequency operation, reducing the size of transformers and inductors. In a bridgeless PFC or LLC converter, the MOSFET's performance is essential for meeting efficiency standards such as 94% efficiency. The D2PAK package is suitable for automotive-grade designs when derated appropriately.
추천
Welding Equipment
In inverter-based welding machines, the STB40N60M2 is used in the high-frequency switching stage to convert DC to AC for the welding arc. Its high current capability (40A) and voltage rating (650V) make it suitable for the demanding conditions. The low on-resistance reduces power losses, improving efficiency and reducing heat sink size. The device's ruggedness ensures reliable operation under short-circuit conditions. In a typical welding inverter, the MOSFET operates at 50-100 kHz, and its fast switching enables precise control of the welding current.
추천
추천 제품 요약
엔지니어링 참조 데이터: STB40N60M2 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | STB40N60M2-EP | IPW60R040CFD7 | FCH40N60 |
|---|---|---|---|---|
| Package | D2PAK (TO-263) | D2PAK (TO-263) - same | D2PAK (TO-263) - same | D2PAK (TO-263) - same |
| Brand | STMicroelectronics | STMicroelectronics | Infineon | onsemi |
| Drain-Source Voltage (VDS) | 650 V | 650 V | 650 V | 600 V |
| Continuous Drain Current (ID) at 25°C | 40 A | 40 A | 40 A | 40 A |
| On-Resistance (RDS(on)) | 0.095 ohm | 0.095 ohm | 0.040 ohm | 0.11 ohm |
| Total Gate Charge (Qg) | 60 nC | 60 nC | 45 nC | 70 nC |
| Power Dissipation (PD) | 250 W | 250 W | 250 W | 250 W |
| Avalanche Ruggedness | Standard | Enhanced | Standard | Standard |
주요 차별점
- Low on-resistance (0.095 ohm) for high efficiency (vs FCH40N60)
- 650V breakdown voltage for higher voltage margins (vs FCH40N60)
- Enhanced avalanche ruggedness option (STB40N60M2-EP) (vs IPW60R040CFD7)
설계 노트
The STB40N60M2 can dissipate up to 250W, but this requires a low thermal resistance path. The D2PAK package's exposed tab must be soldered to a large copper area (at least 1 square inch) on the PCB. Use multiple thermal vias to connect to inner layers. For continuous operation at high currents, consider a heatsink attached to the tab. The junction-to-case thermal resistance is typically 0.5°C/W, and the junction-to-ambient is around 62°C/W without a heatsink.
Place the gate drive circuit close to the MOSFET to minimize parasitic inductance. Use a gate resistor (typically 10-22 ohm) to control switching speed and reduce ringing. The source pin should have a Kelvin connection to the gate driver to avoid voltage drops in the power path. For high-frequency operation, keep the drain and source traces short and wide to minimize inductance.
Do not exceed the maximum gate-source voltage of ±25V. Use a zener diode or TVS for protection if the gate drive can overshoot. Ensure the drain-source voltage does not exceed 650V, especially during transients. The device is avalanche-rated, but repeated avalanche events can reduce lifetime. For parallel operation, use a small gate resistor in each gate to prevent oscillations.
규정 준수 정보
RoHS compliant per STMicroelectronics product page. Not AEC-Q101 qualified; for automotive, consider STB40N60M2-EP or other AEC-Q101 parts.