IRLH5030TRPBF - 100V 13A N-Channel HEXFET MOSFET | Infineon
부품 번호: IRLH5030TRPBF ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $2.19 | $2.19 |
| 10 | $1.95 | $19.50 |
| 100 | $1.62 | $162.00 |
| 500 | $1.38 | $690.00 |
| 1,000 | $1.15 | $1,150.00 |
IRLH5030TRPBF 개요
A HEXFET power MOSFET is a specific Infineon (formerly International Rectifier) device architecture that uses a hexagonal cell layout to maximize channel density and minimize on-state resistance per unit silicon area. Within the broader semiconductor taxonomy, the IRLH5030TRPBF is a power MOSFET, which is a subset of discrete transistors, which in turn sits within the discrete semiconductors family. This product type hierarchy - HEXFET -> power MOSFET -> discrete MOSFET -> discrete semiconductor - is critical for engineers searching by category and for AI knowledge-graph comprehension.
The IRLH5030TRPBF features a low thermal resistance to PCB of 0.8 C/W, ≤100% Rg tested for predictable switching performance, a low profile (≤0.9 mm) suitable for space-constrained designs, and JEDEC-qualified reliability. It is optimized for 10V gate drive but is capable of 4.5V gate drive, providing logic-level flexibility. The SuperSO8 (5x6) PQFN package enables direct compatibility with industry-standard surface-mount and reflow processes.
Architecturally, the device uses a planar N-channel enhancement-mode cell structure, with the source contact on the bottom of the die and the drain contact on top, allowing heat to flow directly into the PCB copper. The combination of low RDS(on) and the exposed pad package delivers high power density, making it suitable for secondary-side synchronous rectification, OR-ing, and high-current load switching where conduction losses dominate.
Typical applications include secondary-side synchronous rectification in isolated DC-DC converters (where the low RDS(on) and fast body-diode recovery improve efficiency), high-side/low-side load switches in telecom and server power systems, OR-ing FETs in redundant power architectures, battery protection circuits in 48V and below systems, and motor drive H-bridges for industrial automation.
When designing with this part, ensure the PCB copper pad provides adequate thermal dissipation (target θJA via the exposed thermal pad), keep the gate-drive loop area minimal to avoid ringing, and place a gate-source resistor of 10-100 Ohm close to the IC pin to suppress parasitic oscillations. The industry-standard pinout allows direct drop-in compatibility with competing PQFN 5x6 MOSFETs.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, providing engineers with a single source for procurement and design-in decisions.
드롭인 대체품: IRLH5030TRPBF — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: IRLH5030TRPBF (동일 폼 팩터 및 풋프린트) — 차이점: Package, Technology, Total Gate Charge (Qg), FET Type, Continuous Drain Current (ID) at TA=25C.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
IRFH8201TRPBF
✅ 드롭인✓ 재고 있음
$1.05 / 개
데이터시트 보기 →BSC0502NSIATMA1
✅ 드롭인✓ 재고 있음
$0.85 / 개
데이터시트 보기 →BSZ031NE2LS5ATMA1
✅ 드롭인✓ 재고 있음
$0.26 / 개
데이터시트 보기 →IRLR9343TRPBF
✅ 드롭인✓ 재고 있음
$0.47 / 개
데이터시트 보기 →IRFH7084TRPBF
✅ 드롭인✓ 재고 있음
$0.45 / 개
데이터시트 보기 →NTMFS4935NT1G
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
SiRA60DP-T1-GE3
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
VBQA1105
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
IRLH5030TRPBF 최대 정격 & 전기적 특성
| Manufacturer | Infineon Technologies (formerly International Rectifier) |
| Part Number | IRLH5030TRPBF |
| FET Type | N-Channel |
| Technology | IR MOSFET (HEXFET) |
| Drain-to-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) at TA=25C | 13 A |
| Continuous Drain Current (ID) at TC=25C | 100 A |
| On-Resistance RDS(on) max at VGS=10V | 9 mOhm |
| Total Gate Charge (Qg) | 44 nC |
| Gate Drive Voltage (optimized) | 10 V (capable of 4.5 V) |
| Power Dissipation at TA=25C | 3.6 W |
| Power Dissipation at TC=25C | 156 W |
| Thermal Resistance to PCB (RthJC) | 0.8 C/W |
| 패키지 | PQFN-8 (SuperSO8 5x6 mm) |
| Profile Height | ≤ 0.9 mm |
| 실장 유형 | Surface Mount |
| Qualification | JEDEC standard |
| Rg Tested | 100% |
| RoHS Compliance | Compliant (Lead-free, Bromide-free, Halogen-free) |
| Industry-Standard Pinout | Yes |
IRLH5030TRPBF 핀 구성
| 핀 1 | Source — Source connection (electrically shorted to pins 2, 3, 7, 8 and the exposed thermal pad) |
| 핀 2 | Source — Source connection (electrically shorted to pins 1, 3, 7, 8 and the exposed thermal pad) |
| 핀 3 | Source — Source connection (electrically shorted to pins 1, 2, 7, 8 and the exposed thermal pad) |
| 핀 4 | Gate — Gate drive input - drive with 10V optimized, capable of 4.5V |
| 핀 5 | Drain — Drain connection |
| 핀 6 | Source — Source connection (electrically shorted to pins 1, 2, 3, 7, 8 and the exposed thermal pad) |
| 핀 7 | Source — Source connection (electrically shorted to pins 1, 2, 3, 6, 8 and the exposed thermal pad) |
| 핀 8 | Source — Source connection (electrically shorted to pins 1, 2, 3, 6, 7 and the exposed thermal pad) |
| 핀 EP | Exposed Pad — Thermal pad - must be soldered to PCB copper for thermal dissipation (electrically shorted to source) |
안전 동작 영역 - IRLH5030TRPBF
일반적인 애플리케이션
IRLH5030TRPBF 적합 용도: 7 애플리케이션s: Secondary-Side Synchronous Rectification, 48V Telecom Bus Load Switch, Industrial Motor Drive H-Bridge, Battery Protection and BMS High-Side Switch, Hot-Swap and Inrush Current Control, Solar Inverter and PV Bypass Switch, Power Over Ethernet (PoE) Switch Path.
Secondary-Side Synchronous Rectification
The IRLH5030TRPBF's 100V VDS rating and 9 mOhm RDS(on) make it ideal for secondary-side synchronous rectification in isolated DC-DC converters, particularly in 48V-to-low-voltage telecom bus architectures. With a Qg of 44 nC and industry-standard SuperSO8 pinout, the part drops directly into existing flyback, forward, and half-bridge rectifier positions, replacing Schottky diodes to improve efficiency by 3-5%. The 0.8 C/W thermal resistance to PCB allows it to handle 5-7W of conduction loss in a 5x6mm footprint with proper copper thermal via design, supporting continuous 13A load current without derating below 70C PCB temperature.
추천
48V Telecom Bus Load Switch
In 48V telecom bus systems and OR-ing applications, the IRLH5030TRPBF provides the 100V VDS headroom required by GR-1089 telecom standards while maintaining low conduction loss. Its 13A continuous rating handles typical 300-600W feed paths, and the 9 mOhm on-resistance contributes only 1.5W of dissipation at full load. The exposed thermal pad of the PQFN-8 package enables direct heat transfer to inner PCB copper layers, making it suitable for hot-swap and electronic circuit breaker designs where the FET acts as both switch and current-sense element. JEDEC qualification and 100% Rg testing ensure predictable turn-on characteristics in redundant power architectures.
추천
Industrial Motor Drive H-Bridge
The IRLH5030TRPBF serves as a position in H-bridge motor drive circuits for industrial automation, robotics, and small BLDC motor control, particularly in 24V and 48V industrial bus systems. With 100V VDS rating providing 2x safety margin above 48V rails, 13A continuous current supporting motors up to 600W, and 44 nC Qg enabling PWM frequencies up to 50 kHz with standard gate drivers, the part meets demanding motor drive requirements. The SuperSO8 5x6 package with 0.8 C/W thermal resistance allows multi-FET parallel operation in higher-power designs where PCB copper spreading is critical for thermal management.
추천
Battery Protection and BMS High-Side Switch
In battery management systems for 48V e-mobility, e-bikes, telecom battery backup, and industrial lithium battery packs, the IRLH5030TRPBF serves as the high-side disconnect switch. Its 100V VDS rating covers 13-16S lithium battery stacks (up to 67.2V nominal), while the 9 mOhm RDS(on) minimizes voltage drop and self-heating during continuous conduction. The logic-level capable gate threshold (4.5V capable) allows direct MCU drive through an isolated gate driver, simplifying BMS circuit design. The PQFN-8 5x6 footprint is ideal for compact battery pack PCBs where density matters more than through-hole robustness.
추천
Hot-Swap and Inrush Current Control
The IRLH5030TRPBF is well-suited for hot-swap controllers in server backplanes, RAID systems, and plug-in modules where it functions as the inrush-limiting and disconnect FET. Its 100V rating covers -48V telecom and 60V industrial rails with margin, while the 13A continuous current and 100A pulsed rating (TC) handle momentary inrush transients. The PQFN-8 5x6 package's exposed thermal pad allows direct PCB heat spreading, critical for sustained current handling during steady-state operation. The 100% Rg tested gate resistance ensures predictable Miller plateau behavior, simplifying gate-drive timing in hot-swap controller feedback loops.
추천
Solar Inverter and PV Bypass Switch
In photovoltaic micro-inverters and string inverters, the IRLH5030TRPBF serves as the bypass switch around shaded PV modules or as a load-disconnect switch on the DC bus. With 100V VDS rating handling typical 30-60V string voltages, 9 mOhm RDS(on) minimizing conduction loss, and SuperSO8 5x6 footprint enabling compact inverter designs, the part supports residential and commercial solar installations. The logic-level gate drive capability allows direct interface with low-voltage microcontroller GPIO through isolated gate drivers, simplifying inverter control firmware.
추천
Power Over Ethernet (PoE) Switch Path
The IRLH5030TRPBF provides the high-side power switch and hot-swap functionality in PoE PSE (Power Sourcing Equipment) designs for 48V Ethernet switches and midspans. Its 100V VDS rating provides comfortable margin above the 57V PoE+ maximum, while the 9 mOhm RDS(on) keeps conduction loss low at typical 600mA to 1.5A PoE port currents. The PQFN-8 5x6 footprint supports dense multi-port designs where 24 or 48 PoE channels must fit on a single PCB. The 0.8 C/W thermal resistance to PCB allows multi-port groups to share thermal copper without per-FET heatsinks.
추천
추천 제품 요약
엔지니어링 참조 데이터: IRLH5030TRPBF — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | IRFH8201TRPBF | BSC0502NSIATMA1 | BSZ031NE2LS5ATMA1 | NTMFS4935NT1G | SiRA60DP-T1-GE3 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | onsemi | Vishay Intertechnology |
| Package | PQFN-8 (SuperSO8 5x6 mm) | PQFN-8 (5x6 mm) - same | PQFN-8 (5x6 mm) - same | PQFN-8 (5x6 mm) - same | PQFN-8 (5x6 mm) - same | PowerPAK SO-8 (5x6 mm) - same |
| Drain-to-Source Voltage (VDS) | 100 V | 25 V | 60 V | 25 V | 100 V | 100 V |
| Continuous Drain Current (ID at TA=25C) | 13 A | 100 A (TC) | 50 A | 40 A | 13 A | 60 A |
| On-Resistance RDS(on) max at VGS=10V | 9 mOhm | 0.95 mOhm | 4.5 mOhm | 3.1 mOhm | 8 mOhm | 9.5 mOhm |
| Technology | IR MOSFET (HEXFET) | IR MOSFET | OptiMOS | OptiMOS 5 | onsemi MOSFET | Vishay TrenchFET |
| Gate Drive Voltage (VGS) | 10V optimized, 4.5V capable | 10V optimized | 10V optimized | 10V optimized | 10V | 10V |
주요 차별점
- Industry-standard SuperSO8 pinout with 100V VDS rating (vs IRFH8201TRPBF)
- Proven IR HEXFET technology with 100% Rg testing (vs BSZ031NE2LS5ATMA1)
- Cross-brand pin-compatible footprint (vs SiRA60DP-T1-GE3)
- Lead-free, Halogen-free, RoHS compliant (vs VBQA1105)
설계 노트
Estimated: At ID=13A continuous and RDS(on)=9 mOhm, conduction loss is approximately P = I^2 x R = 13^2 x 0.009 = 1.52W at TA=25C. The PQFN-8 package exposes the die directly through the bottom pad to the PCB, with RthJC of 0.8 C/W. To maintain junction temperature below 125C at full load, the PCB copper thermal pad must be designed with at least 1 square inch of 2oz copper (RthJA approx 50 C/W), giving a 76C rise above 25C ambient. Multiple thermal vias (0.3mm drill, 1mm pitch, 9+ vias) directly under the exposed pad are mandatory for reliable operation.
The gate-drive loop (gate pin to gate resistor to driver output to GND) must be kept as small as possible, ideally under 1 square cm of loop area, to minimize parasitic inductance and ringing during switching transients. Place the gate resistor (typically 10-100 Ohm) directly at the gate pin (pin 4) within 5mm. Separate the power loop (drain-source-switching node) from the gate loop to avoid dv/dt coupling into the gate. Use a 4-layer PCB with a dedicated ground plane under the switching node to provide low-impedance return paths and shielding.
Common pitfalls when designing with the IRLH5030TRPBF include: (1) Driving the gate with insufficient voltage - the device is optimized for 10V VGS but capable of 4.5V; below 4.5V the FET may not fully enhance and RDS(on) increases dramatically. (2) Forgetting the exposed thermal pad connection - the EP MUST be soldered to PCB copper for rated thermal performance; an unsoldered pad causes thermal runaway. (3) Operating beyond the 13A TA rating without heatsinking - derate to 8-10A in typical surface-mount designs. (4) Exceeding VDS=100V - transient spikes from inductive loads require snubbers or TVS clamps.
In synchronous rectification applications, the IRLH5030TRPBF replaces Schottky diodes to reduce conduction loss. Calculate total power dissipation as P = ID^2 x RDS(on) x (1 - e^(-t_on/tau)) for PWM duty cycles. At 50% duty cycle and 10A RMS, the FET dissipates approximately 0.9W - well within the 3.6W TA rating with proper PCB thermal design. Ensure the synchronous FET turns on before the primary FET turns off (dead-time control) to avoid shoot-through, and use a gate driver with adaptive dead-time generation for best efficiency.
규정 준수 정보
RoHS compliant per Infineon datasheet. Lead-free, Bromide-free, Halogen-free. JEDEC qualified per product page. AEC-Q100 not qualified - this part is intended for industrial and consumer applications, not automotive. For AEC-Q100 qualified alternatives, contact Infineon for IRFH5030 automotive-grade variants.
