IXDD609SI - 9A Low-Side Ultrafast MOSFET/IGBT Gate Driver | IXYS
부품 번호: IXDD609SI ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $3.45 | $3.45 |
| 10 | $3.1 | $31.00 |
| 100 | $2.78 | $278.00 |
| 500 | $2.45 | $1,225.00 |
| 1,000 | $2.15 | $2,150.00 |
IXDD609SI 개요
A low-side gate driver is a power-management IC that sits between a low-power control signal (from a microcontroller, DSP, or FPGA) and the gate of a power MOSFET or IGBT. The driver's job is to source and sink large peak currents (here, 9A) so that the gate capacitance charges and discharges as quickly as possible. Faster gate transitions directly reduce switching losses, shrink the dead-time needed between complementary switches, and shrink the size of the magnetic components that follow. The IXDD609SI belongs to the gate-driver sub-category of power-management ICs, sitting hierarchically below MOSFETs/IGBTs but above simple logic-level translators in the system signal chain.
Key features include 9A peak source/sink drive, 4.5V-35V operating range, <25ns rise/fall times with 1nF load, matched propagation delays, CMOS-compatible input with negative-input swing tolerance, and an enable pin for sequencing. The exposed thermal pad keeps junction temperature manageable at sustained high switching frequencies, and proprietary cross-conduction/shoot-through protection prevents both output stages from turning on simultaneously.
The device is built on a high-speed bipolar-CMOS-DMOS process that combines low on-resistance output stages with a CMOS front end. This gives the IXDD609SI its hallmark combination of very high di/dt capability and very low quiescent current, plus latch-up immunity that lets the input sit at large negative voltages without damaging the IC.
Typical applications include driving large MOSFETs and IGBTs in motor drives, three-phase inverters, switch-mode power supplies (SMPS), class-D audio amplifiers, and DC-DC converter synchronous-rectifier stages. The wide operating range and AEC-Q100 qualification also make it a strong fit for 24V industrial buses and 12V/24V automotive systems including electric power steering and onboard chargers.
When designing with this part, place the IXDD609SI within 1-2 cm of the gate it drives to minimize the gate-loop inductance; use a 1uF low-ESR ceramic bypass capacitor right on the VCC pin, and respect the SOA of the driver when driving very large gate charges (Qg > 100 nC) at high frequency to avoid thermal shutdown.
This page synthesizes distributor pricing, drop-in alternatives from IXYS's own IXD_609 family, and practical thermal/layout notes beyond what the manufacturer datasheet alone provides.
드롭인 대체품: IXDD609SI — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: IXDD609SI (동일 폼 팩터 및 풋프린트) — 차이점: Fall Time, Operating Temperature Range, Package, Propagation Delay, Rise Time.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
IXDN609SI
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
IXDD609SIA
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
IXDI609SI
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
IXDD609SITR
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
UCC27531DBVR
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
IXDD609SI 최대 정격 & 전기적 특성
| Configuration | Low-Side |
| 출력 수 | 1 |
| Peak Source/Sink Current | 9 A |
| Supply Voltage Range | 4.5 V to 35 V |
| Logic Input Voltage Range | -5 V to VCC |
| Input Type | CMOS-compatible, non-inverting with enable |
| Propagation Delay | 40 ns (typical) |
| 상승 시간 | <25 ns (with 1 nF load) |
| 하강 시간 | <25 ns (with 1 nF load) |
| Output Stage | Matched propagation delays, cross-conduction protected |
| 동작 온도 범위 | -40 C to +125 C (extended) |
| 패키지 | 8-SOIC-EP (Power SOIC with exposed pad) |
| 실장 유형 | Surface Mount |
| Automotive Qualification | AEC-Q100 |
| Latch-up Immunity | Yes (proprietary input structure) |
IXDD609SI 핀 구성
| 핀 1 | EN — Enable input (active-high; tie to VCC if not used) |
| 핀 2 | IN — Logic input (CMOS, non-inverting) |
| 핀 3 | GND — Ground return |
| 핀 4 | NC — Not connected (per datasheet) |
| 핀 5 | OUT — Gate-drive output to MOSFET/IGBT gate |
| 핀 6 | VCC — Supply voltage (4.5V to 35V) |
| 핀 7 | NC — Not connected (per datasheet) |
| 핀 8 | NC — Not connected (per datasheet) |
| 핀 9 | EP — Exposed thermal pad - tie to GND for heatsinking |
일반적인 애플리케이션
IXDD609SI 적합 용도: 6 애플리케이션s: Three-Phase Motor Drive (Low-Side Gate Drive), Switch-Mode Power Supply (SMPS) Synchronous Rectifier, Class-D Audio Amplifier Output Stage, Automotive 12V/24V Solenoid and Injector Driver, Industrial 24V PLC Switching Output, Solar Inverter and DC Optimizer Switching.
Three-Phase Motor Drive (Low-Side Gate Drive)
The IXDD609SI drives the low-side IGBTs or MOSFETs in a 3-phase inverter for industrial servo drives and automotive traction inverters. Its 9A peak source/sink current charges the gate of 600V/1200V-class IGBTs (typical Qg 50-200 nC) in tens of nanoseconds, while the 4.5V-35V supply rails directly from a 12V or 24V bus. The matched propagation delay (40ns typical) keeps the high-side/low-side dead-time tight, reducing distortion and switching loss. AEC-Q100 qualification allows deployment under the hood of 12V/48V EVs. Compared to discrete push-pull buffers, the IXDD609SI eliminates shoot-through with its proprietary cross-conduction protection and saves PCB area in the gate-drive layer.
추천
Switch-Mode Power Supply (SMPS) Synchronous Rectifier
In isolated and non-isolated DC-DC converters, the IXDD609SI drives the synchronous-rectifier MOSFETs on the secondary side of the transformer. Its 9A peak current allows use of very low-Rds(on) MOSFETs with large gate charge, which would otherwise be limited by driver strength. The <25ns rise/fall times minimize rectifier body-diode conduction, boosting efficiency by 1-3% in 48V-to-12V bus converters. The exposed thermal pad keeps the driver cool even at switching frequencies above 200 kHz. The negative-input tolerance (-5V) is useful when the input is derived from a gate-drive transformer on the secondary side.
추천
Class-D Audio Amplifier Output Stage
The IXDD609SI drives the output-stage MOSFETs in a class-D audio amplifier, where the 9A peak current enables <25ns switching transitions to keep the dead-time short and distortion low. The wide 4.5V-35V supply supports both portable (lithium-cell) and high-power (24V automotive) class-D systems. The matched propagation delay preserves audio fidelity by minimizing asymmetry between the high-side and low-side switch transitions. The CMOS input is easily driven by any DSP or audio codec PWM output, and the enable pin supports standby/mute sequencing. AEC-Q100 qualification makes it suitable for in-vehicle infotainment amplifiers.
추천
Automotive 12V/24V Solenoid and Injector Driver
In automotive engine management modules, the IXDD609SI drives 12V/24V fuel injectors and solenoid valves. The 9A peak current is more than sufficient for the modest gate charge of these loads, while the wide 4.5V-35V supply accepts cranking transients directly. The enable pin allows the ECU to disable drivers for limp-home or shutdown sequences. The -40C to +125C operating range covers under-hood and chassis-mount enclosures. AEC-Q100 qualification and latch-up-immune input make it a robust choice for safety-critical powertrain ECUs.
추천
Industrial 24V PLC Switching Output
The IXDD609SI drives 24V industrial loads (relays, valves, contactors) from a PLC or industrial controller. The 9A peak current handles even large IGBT-based solid-state relays directly, and the 35V supply headroom tolerates inductive kick transients. The exposed pad allows operation at high duty cycles in sealed modules. The enable pin allows the PLC to implement software-controlled safe torque off (STO) or safe stop. The CMOS input is directly compatible with 3.3V and 5V PLC logic outputs. AEC-Q100/extended temperature qualification meets the requirements of factory-floor and process-control installations.
추천
Solar Inverter and DC Optimizer Switching
The IXDD609SI drives the high-current switching MOSFETs in residential solar DC-DC optimizers and string inverters. Its 9A peak current easily charges the gate of 100V-200V MOSFETs with Qg up to 100 nC, while the 35V supply accepts the 24V auxiliary rail common in solar applications. The matched propagation delay simplifies compliance with grid-tie anti-islanding timing. The exposed pad keeps the driver cool in outdoor sealed enclosures at ambient temperatures up to 85C. The AEC-Q100 qualification is a strong over-engineering signal for the long-life (>25 year) requirements of solar installations.
추천
추천 제품 요약
엔지니어링 참조 데이터: IXDD609SI — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | IXDN609SI | IXDD609SIA | IXDI609SI | UCC27531DBVR |
|---|---|---|---|---|---|
| Package | 8-SOIC-EP (Power SOIC) | 8-SOIC-EP - same | 8-SOIC-EP - same | 8-SOIC-EP - same | 8-SOIC-EP - same |
| Brand | IXYS (Littelfuse) | IXYS | IXYS | IXYS | Texas Instruments |
| Peak Output Current | 9 A (source/sink) | 9 A | 9 A | 9 A | 2.5 A |
| Supply Voltage Range | 4.5 V to 35 V | 4.5 V to 35 V | 4.5 V to 35 V | 4.5 V to 35 V | 10 V to 35 V |
| Logic Polarity | Non-inverting with EN | Non-inverting, no EN | Non-inverting with EN | Inverting, no EN | Non-inverting single |
| Propagation Delay | 40 ns (typical) | 40 ns | 40 ns | 40 ns | 26 ns (faster) |
| Rise/Fall Time (1 nF load) | <25 ns / <25 ns | <25 ns | <25 ns | <25 ns | ~15 ns |
| Negative Input Tolerance | -5 V | -5 V | -5 V | -5 V | -5 V (with split supply) |
| Automotive Grade | AEC-Q100 | AEC-Q100 | AEC-Q100 | AEC-Q100 | AEC-Q100 (Q1 suffix) |
주요 차별점
- 9A peak current is 3.6x higher than the closest 8-SOIC-EP competitor (vs UCC27531DBVR)
- EN pin allows sequencing and safe-disable (vs IXDN609SI)
- 4.5V minimum supply is lower than most competitors (vs UCC27531DBVR)
설계 노트
Place the IXDD609SI within 1-2 cm of the gate it drives to minimize the gate-loop inductance. The 9A peak di/dt can create severe ringing if the loop area is large; use a star-ground configuration with the driver's GND pin and the source of the driven MOSFET forming the closest return path. The exposed pad must be soldered to a copper pour of at least 1 square inch, with multiple thermal vias to the inner/ground plane, to keep the junction temperature within ratings at sustained high-frequency operation. Estimated: at 9A peak and 1MHz switching into a 100nC gate, the driver dissipates around 0.5-1W; on a 50 C/W board the junction rises 25-50C above ambient.
Decouple the VCC pin with a 1uF low-ESR ceramic capacitor placed within 2-3 mm of the pin. A larger bulk capacitor (10-47uF) on the 12V rail is recommended for high-frequency converters. The IXDD609SI does not require a bootstrap capacitor since it is a low-side driver; however, the input logic supply can share the VCC rail. The 4.5V minimum supply means the driver may not fully enhance sub-4.5V-logic-level MOSFETs; verify that VCC - Vgs(th) is sufficient for the driven MOSFET.
Do not leave the EN pin floating; tie it to VCC (active-high) or to GND through a pull-down if unused. Floating enables can cause partial turn-on and shoot-through in the output stage. When driving very large gate charges (Qg > 200 nC) at high frequency, monitor the case temperature - the 8-SOIC-EP package is small and can thermal-limit before the absolute maximum ratings. If the driven MOSFET has a Kelvin source, return the driver's GND to the Kelvin source rather than the power-source pad to avoid ground-bounce-induced false triggering. The negative-input tolerance (-5V) is NOT the absolute-maximum on the logic pins; consult the datasheet's input-clamp-current spec if the input is fed from a transformer.
규정 준수 정보
AEC-Q100 qualified per IXYS product page. RoHS and REACH compliance per IXYS/Littelfuse product documentation. Halogen-free status not explicitly stated in the provided data; marked unknown.
