IXYS

IXDD609SI - 9A Low-Side Ultrafast MOSFET/IGBT Gate Driver | IXYS

Артикул: IXDD609SI ✓ Активен
В наличии Отправка в течение 1–3 рабочих дней
4.5 V to 35 V Vdss 9 A Id 8-SOIC-EP (Power SOIC with exposed pad) Package
От $2.15 USD / шт.
MOQ: 1 |
Цена обновлена: 2026-10-08
Оптовые цены
Кол-во Цена за ед. Итого
1 $3.45 $3,45
10 $3.1 $31,00
100 $2.78 $278,00
500 $2.45 $1.225,00
1.000 $2.15 $2.150,00
ℹ️ Все цены указаны в USD

IXDD609SI Обзор

The IXYS IXDD609SI is a 9A peak source/sink low-side gate driver IC in an 8-pin SOIC with an exposed pad (8-SOIC-EP), configured as a non-inverting driver with an enable input. It operates from a wide 4.5V to 35V supply, supports logic inputs that withstand negative swings down to -5V, and produces rise/fall times below 25ns, making it one of the fastest high-current gate drivers in its class. It is pin-compatible with the IXDI609SI (inverting) and IXDN609SI (non-inverting, no enable) variants and is AEC-Q100 qualified for automotive use.

A low-side gate driver is a power-management IC that sits between a low-power control signal (from a microcontroller, DSP, or FPGA) and the gate of a power MOSFET or IGBT. The driver's job is to source and sink large peak currents (here, 9A) so that the gate capacitance charges and discharges as quickly as possible. Faster gate transitions directly reduce switching losses, shrink the dead-time needed between complementary switches, and shrink the size of the magnetic components that follow. The IXDD609SI belongs to the gate-driver sub-category of power-management ICs, sitting hierarchically below MOSFETs/IGBTs but above simple logic-level translators in the system signal chain.

Key features include 9A peak source/sink drive, 4.5V-35V operating range, <25ns rise/fall times with 1nF load, matched propagation delays, CMOS-compatible input with negative-input swing tolerance, and an enable pin for sequencing. The exposed thermal pad keeps junction temperature manageable at sustained high switching frequencies, and proprietary cross-conduction/shoot-through protection prevents both output stages from turning on simultaneously.

The device is built on a high-speed bipolar-CMOS-DMOS process that combines low on-resistance output stages with a CMOS front end. This gives the IXDD609SI its hallmark combination of very high di/dt capability and very low quiescent current, plus latch-up immunity that lets the input sit at large negative voltages without damaging the IC.

Typical applications include driving large MOSFETs and IGBTs in motor drives, three-phase inverters, switch-mode power supplies (SMPS), class-D audio amplifiers, and DC-DC converter synchronous-rectifier stages. The wide operating range and AEC-Q100 qualification also make it a strong fit for 24V industrial buses and 12V/24V automotive systems including electric power steering and onboard chargers.

When designing with this part, place the IXDD609SI within 1-2 cm of the gate it drives to minimize the gate-loop inductance; use a 1uF low-ESR ceramic bypass capacitor right on the VCC pin, and respect the SOA of the driver when driving very large gate charges (Qg > 100 nC) at high frequency to avoid thermal shutdown.

This page synthesizes distributor pricing, drop-in alternatives from IXYS's own IXD_609 family, and practical thermal/layout notes beyond what the manufacturer datasheet alone provides.

Аналоги без доработки для IXDD609SI — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.

Варианты в этой серии

Модели той же серии, совместимые без доработки с IXDD609SI (тот же форм-фактор и посадочное место) — отличается по Fall Time, Operating Temperature Range, Package, Propagation Delay, Rise Time.

IXYS
Fall Time: < 25 ns
Operating Temperature Range: -40 °C to +125 °C
Package: TO-263-5 (D2PAK), 5 leads + tab
Сравнить с IXDD609SI →

Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:

IXDN609SI

✅ Прямая замена
📦 8-SOIC-EP
no EN pin (EN pin tied to VCC externally); otherwise same 9A peak, 4.5-35V, 8-SOIC-EP

📋 Справочный аналог (нет в каталоге)

IXDD609SIA

✅ Прямая замена
📦 8-SOIC-EP
same die and package, AEC-Q100 automotive grade marking, otherwise identical

📋 Справочный аналог (нет в каталоге)

IXDI609SI

✅ Прямая замена
📦 8-SOIC-EP
IN pin is inverting (pin 2 logic polarity reversed), no EN; otherwise same 9A, 4.5-35V, 8-SOIC-EP

📋 Справочный аналог (нет в каталоге)

IXDD609SITR

✅ Прямая замена
📦 8-SOIC-EP
same die, tape-and-reel packaging variant; rise/fall 22ns/15ns vs 25ns typical

📋 Справочный аналог (нет в каталоге)

UCC27531DBVR

✅ Прямая замена
📦 8-SOIC-EP
2.5A peak vs 9A peak (-72% current); 10-35V supply vs 4.5-35V; same 8-SOIC-EP footprint

📋 Справочный аналог (нет в каталоге)

IXDD609SI Максимальные параметры и электрические характеристики

Configuration Low-Side
Количество выходов 1
Peak Source/Sink Current 9 A
Supply Voltage Range 4.5 V to 35 V
Logic Input Voltage Range -5 V to VCC
Input Type CMOS-compatible, non-inverting with enable
Propagation Delay 40 ns (typical)
Время нарастания <25 ns (with 1 nF load)
Время спада <25 ns (with 1 nF load)
Output Stage Matched propagation delays, cross-conduction protected
Диапазон рабочих температур -40 C to +125 C (extended)
Корпус 8-SOIC-EP (Power SOIC with exposed pad)
Тип монтажа Surface Mount
Automotive Qualification AEC-Q100
Latch-up Immunity Yes (proprietary input structure)

Конфигурация выводов IXDD609SI

SOIC-8-EP Package Pinout Diagram SOIC-8 with exposed thermal pad, 3.9x4.9mm, P1.27mm, EP 2.2x2.6mm, JEDEC MS-012. EP 1 8 2 7 3 6 4 5 SOIC-8-EP
Контакт 1 EN — Enable input (active-high; tie to VCC if not used)
Контакт 2 IN — Logic input (CMOS, non-inverting)
Контакт 3 GND — Ground return
Контакт 4 NC — Not connected (per datasheet)
Контакт 5 OUT — Gate-drive output to MOSFET/IGBT gate
Контакт 6 VCC — Supply voltage (4.5V to 35V)
Контакт 7 NC — Not connected (per datasheet)
Контакт 8 NC — Not connected (per datasheet)
Контакт 9 EP — Exposed thermal pad - tie to GND for heatsinking

Типичное применение

IXDD609SI подходит для 6 применениеs: Three-Phase Motor Drive (Low-Side Gate Drive), Switch-Mode Power Supply (SMPS) Synchronous Rectifier, Class-D Audio Amplifier Output Stage, Automotive 12V/24V Solenoid and Injector Driver, Industrial 24V PLC Switching Output, Solar Inverter and DC Optimizer Switching.

🏭

Three-Phase Motor Drive (Low-Side Gate Drive)

The IXDD609SI drives the low-side IGBTs or MOSFETs in a 3-phase inverter for industrial servo drives and automotive traction inverters. Its 9A peak source/sink current charges the gate of 600V/1200V-class IGBTs (typical Qg 50-200 nC) in tens of nanoseconds, while the 4.5V-35V supply rails directly from a 12V or 24V bus. The matched propagation delay (40ns typical) keeps the high-side/low-side dead-time tight, reducing distortion and switching loss. AEC-Q100 qualification allows deployment under the hood of 12V/48V EVs. Compared to discrete push-pull buffers, the IXDD609SI eliminates shoot-through with its proprietary cross-conduction protection and saves PCB area in the gate-drive layer.

⚡

Switch-Mode Power Supply (SMPS) Synchronous Rectifier

In isolated and non-isolated DC-DC converters, the IXDD609SI drives the synchronous-rectifier MOSFETs on the secondary side of the transformer. Its 9A peak current allows use of very low-Rds(on) MOSFETs with large gate charge, which would otherwise be limited by driver strength. The <25ns rise/fall times minimize rectifier body-diode conduction, boosting efficiency by 1-3% in 48V-to-12V bus converters. The exposed thermal pad keeps the driver cool even at switching frequencies above 200 kHz. The negative-input tolerance (-5V) is useful when the input is derived from a gate-drive transformer on the secondary side.

🎧

Class-D Audio Amplifier Output Stage

The IXDD609SI drives the output-stage MOSFETs in a class-D audio amplifier, where the 9A peak current enables <25ns switching transitions to keep the dead-time short and distortion low. The wide 4.5V-35V supply supports both portable (lithium-cell) and high-power (24V automotive) class-D systems. The matched propagation delay preserves audio fidelity by minimizing asymmetry between the high-side and low-side switch transitions. The CMOS input is easily driven by any DSP or audio codec PWM output, and the enable pin supports standby/mute sequencing. AEC-Q100 qualification makes it suitable for in-vehicle infotainment amplifiers.

🚗

Automotive 12V/24V Solenoid and Injector Driver

In automotive engine management modules, the IXDD609SI drives 12V/24V fuel injectors and solenoid valves. The 9A peak current is more than sufficient for the modest gate charge of these loads, while the wide 4.5V-35V supply accepts cranking transients directly. The enable pin allows the ECU to disable drivers for limp-home or shutdown sequences. The -40C to +125C operating range covers under-hood and chassis-mount enclosures. AEC-Q100 qualification and latch-up-immune input make it a robust choice for safety-critical powertrain ECUs.

🏭

Industrial 24V PLC Switching Output

The IXDD609SI drives 24V industrial loads (relays, valves, contactors) from a PLC or industrial controller. The 9A peak current handles even large IGBT-based solid-state relays directly, and the 35V supply headroom tolerates inductive kick transients. The exposed pad allows operation at high duty cycles in sealed modules. The enable pin allows the PLC to implement software-controlled safe torque off (STO) or safe stop. The CMOS input is directly compatible with 3.3V and 5V PLC logic outputs. AEC-Q100/extended temperature qualification meets the requirements of factory-floor and process-control installations.

🌞

Solar Inverter and DC Optimizer Switching

The IXDD609SI drives the high-current switching MOSFETs in residential solar DC-DC optimizers and string inverters. Its 9A peak current easily charges the gate of 100V-200V MOSFETs with Qg up to 100 nC, while the 35V supply accepts the 24V auxiliary rail common in solar applications. The matched propagation delay simplifies compliance with grid-tie anti-islanding timing. The exposed pad keeps the driver cool in outdoor sealed enclosures at ambient temperatures up to 85C. The AEC-Q100 qualification is a strong over-engineering signal for the long-life (>25 year) requirements of solar installations.

What is the peak output current of the IXDD609SI?
The IXDD609SI sources and sinks 9A of peak gate-drive current, per the IXYS IXD_609 datasheet family. This high peak capability charges and discharges large MOSFET or IGBT gate capacitances in under 25ns, minimizing switching losses in high-frequency converters and motor-drive stages. Real-world average DC current is lower and bounded by thermal dissipation in the 8-SOIC-EP package.
What is the operating supply voltage range of IXDD609SI?
The IXDD609SI operates from 4.5V to 35V on its VCC supply pin, as stated in the IXYS IXD_609 datasheet. This range covers 5V/12V/24V logic and bus rails as well as 30V-class industrial and automotive supplies, making it a universal driver for most low-side MOSFETs and IGBTs. The input logic is also tolerant of swings down to -5V, allowing direct interface to gate-driver transformers.
What is the difference between IXDD609SI, IXDN609SI, and IXDI609SI?
All three are members of the IXYS IXD_609SI family in the 8-SOIC-EP package. The IXDD609SI is non-inverting with an enable pin, the IXDN609SI is non-inverting without enable, and the IXDI609SI is inverting without enable. They share the same 9A peak drive, 4.5V-35V supply, and pinout on the basic pins, but pin 2 (logic) and pin 3 (enable) functions differ, so they are NOT pin-for-pin drop-in replacements.
Where can I buy the IXDD609SI and what does it cost?
The IXDD609SI is in stock at authorized distributors including DigiKey, Mouser, Arrow, and Win Source as of 2026-10-08. Pricing for a single unit is approximately $3.45 USD, dropping to roughly $2.15 at 1,000-piece reels. Lead time for production quantities is typically 8-12 weeks from IXYS/Littelfuse authorized channels.
What is the best drop-in replacement for the IXDD609SI?
The closest drop-in alternative from the same family is the IXDN609SI, which is pin-compatible on the basic pins but lacks the enable function, or the IXDD609SIA automotive-grade variant in the same 8-SOIC-EP footprint. Both share the 9A peak drive and 4.5V-35V supply of the IXDD609SI. Engineers who need an enable pin should stay on the IXDD609SI; those willing to give up the enable can use IXDN609SI for lower quiescent current.
Is the IXDD609SI suitable for driving IGBTs in motor drives?
Yes. The IXDD609SI's 9A peak source/sink, 35V max supply, and <25ns rise/fall times are well matched to IGBTs in the 600V/1200V class used in three-phase motor drives, servo amplifiers, and industrial inverters. The IXYS IXD_609 datasheet specifically lists motor drive and power conversion as target applications. The exposed pad must be soldered to sufficient copper to keep junction temperature within ratings at high switching frequencies.
What is the propagation delay of the IXDD609SI?
The IXDD609SI has a typical propagation delay of 40ns from input to output, according to the IXYS IXD_609 datasheet. Matched delays between the rising and falling edges minimize duty-cycle distortion in the driven power stage, which is critical for synchronous rectifiers and high-frequency DC-DC converters. The enable-to-output delay is in the same order of magnitude for sequencing.
Can the IXDD609SI be used in automotive applications?
Yes. The IXDD609SI is qualified to AEC-Q100 standards, as stated on the IXYS product page and the Littelfuse IXD_609SI datasheet. It is suitable for 12V and 24V automotive systems including electric power steering, onboard chargers, DC-DC converters, and traction inverters. The operating temperature range of -40C to +125C covers automotive under-hood environments.
IXDD609SI vs UCC27531 - which is better for high-frequency DC-DC?
The IXDD609SI delivers 9A peak drive and 4.5V-35V supply, which is a much higher peak current than the TI UCC27531DBVR (2.5A/2.5A, 10V-35V). For driving very large MOSFETs or IGBTs at high frequency, the IXDD609SI's 9A headroom is a clear advantage. For lower-current, smaller-FET designs where cost and PCB area are tighter, the UCC27531 in 8-SOIC-EP is a reasonable cross-brand alternative, but it is not a pin-for-pin drop-in.
What is the input logic threshold of the IXDD609SI?
The IXDD609SI has CMOS-compatible logic inputs with a typical threshold around VCC/2, and the input structure is tolerant of negative swings down to -5V as documented in the IXYS IXD_609 datasheet. The enable pin follows the same logic. The negative-input tolerance is a key differentiator against many competitors, allowing direct connection to gate-drive transformer secondary windings without clamping diodes.
Where can I download the IXDD609SI datasheet PDF?
The official IXYS IXD_609 datasheet is hosted by Littelfuse (which acquired IXYS) at littelfuse.com/assetdocs/IXD-609, and is also mirrored on Mouser (media-3321385.pdf) and DigiKey. The PDF includes absolute maximum ratings, recommended operating conditions, timing diagrams, and application circuits for MOSFET/IGBT gate driving. Always check the latest revision for AEC-Q100 status and qualification test results.
What is the pinout of the IXDD609SI 8-SOIC-EP?
The IXDD609SI 8-SOIC-EP pinout, per the IXYS datasheet, is: Pin 1 EN (enable), Pin 2 IN (logic input, non-inverting), Pin 3 GND, Pin 4 NC, Pin 5 OUT (gate drive output), Pin 6 VCC, Pin 7 NC, Pin 8 NC, with the exposed pad (Pin 9 thermal pad) tied to GND for heat sinking. The pinout matches the IXDN609SI and IXDI609SI on pins 3-9 but differs on pins 1-2 (logic polarity and enable).
What is the thermal resistance of the IXDD609SI in SOIC-EP?
The 8-SOIC-EP package with exposed pad provides a thermal resistance of roughly 40-50 C/W on a standard JEDEC 2s2p test board, allowing the IXDD609SI to dissipate around 1-1.5W continuous at 25C ambient. With proper PCB copper pours, the package can sustain continuous 9A peak switching at high frequency. For designs approaching the thermal limit, attach the exposed pad to at least 1 square inch of copper.
Is the IXDD609SI the same as the IXDD609SIA?
Yes, the IXDD609SIA is the same die and same 8-SOIC-EP package as the IXDD609SI, qualified to AEC-Q100 automotive standards. The base IXDD609SI is also AEC-Q100 qualified per the IXYS product page, so both are automotive-grade. The 'A' suffix historically distinguished AEC-Q100 lots but the standard IXDD609SI on current production is already qualified; always check the latest datasheet revision to confirm.

Справочные инженерные данные для IXDD609SI — сравнение, рекомендации по проектированию и информация о соответствии.

Руководство по выбору

Choose the IXDD609SI when you need 9A of peak gate-drive current in an 8-SOIC-EP package and require an active-high enable pin for sequencing. It is the strongest choice for low-side drive of large IGBTs/MOSFETs in 12V/24V industrial and 12V/24V automotive systems. Select the IXDN609SI when enable is not needed (saves a pin and the 1uA EN quiescent current) and the same 9A drive is desired. Select the IXDI609SI only when inverting logic is required by the system. For designs with smaller MOSFETs (Qg < 30 nC) and tighter cost targets, the TI UCC27531DBVR is a 2.5A alternative in the same footprint, but the -72% current derating must be acceptable.

Сравнение с аналогами

Параметр Этот товар IXDN609SI IXDD609SIA IXDI609SI UCC27531DBVR
Package 8-SOIC-EP (Power SOIC) 8-SOIC-EP - same 8-SOIC-EP - same 8-SOIC-EP - same 8-SOIC-EP - same
Brand IXYS (Littelfuse) IXYS IXYS IXYS Texas Instruments
Peak Output Current 9 A (source/sink) 9 A 9 A 9 A 2.5 A
Supply Voltage Range 4.5 V to 35 V 4.5 V to 35 V 4.5 V to 35 V 4.5 V to 35 V 10 V to 35 V
Logic Polarity Non-inverting with EN Non-inverting, no EN Non-inverting with EN Inverting, no EN Non-inverting single
Propagation Delay 40 ns (typical) 40 ns 40 ns 40 ns 26 ns (faster)
Rise/Fall Time (1 nF load) <25 ns / <25 ns <25 ns <25 ns <25 ns ~15 ns
Negative Input Tolerance -5 V -5 V -5 V -5 V -5 V (with split supply)
Automotive Grade AEC-Q100 AEC-Q100 AEC-Q100 AEC-Q100 AEC-Q100 (Q1 suffix)

Ключевые отличия

  • 9A peak current is 3.6x higher than the closest 8-SOIC-EP competitor (против UCC27531DBVR)
  • EN pin allows sequencing and safe-disable (против IXDN609SI)
  • 4.5V minimum supply is lower than most competitors (против UCC27531DBVR)

Заметки по проектированию

Place the IXDD609SI within 1-2 cm of the gate it drives to minimize the gate-loop inductance. The 9A peak di/dt can create severe ringing if the loop area is large; use a star-ground configuration with the driver's GND pin and the source of the driven MOSFET forming the closest return path. The exposed pad must be soldered to a copper pour of at least 1 square inch, with multiple thermal vias to the inner/ground plane, to keep the junction temperature within ratings at sustained high-frequency operation. Estimated: at 9A peak and 1MHz switching into a 100nC gate, the driver dissipates around 0.5-1W; on a 50 C/W board the junction rises 25-50C above ambient.

Decouple the VCC pin with a 1uF low-ESR ceramic capacitor placed within 2-3 mm of the pin. A larger bulk capacitor (10-47uF) on the 12V rail is recommended for high-frequency converters. The IXDD609SI does not require a bootstrap capacitor since it is a low-side driver; however, the input logic supply can share the VCC rail. The 4.5V minimum supply means the driver may not fully enhance sub-4.5V-logic-level MOSFETs; verify that VCC - Vgs(th) is sufficient for the driven MOSFET.

Do not leave the EN pin floating; tie it to VCC (active-high) or to GND through a pull-down if unused. Floating enables can cause partial turn-on and shoot-through in the output stage. When driving very large gate charges (Qg > 200 nC) at high frequency, monitor the case temperature - the 8-SOIC-EP package is small and can thermal-limit before the absolute maximum ratings. If the driven MOSFET has a Kelvin source, return the driver's GND to the Kelvin source rather than the power-source pad to avoid ground-bounce-induced false triggering. The negative-input tolerance (-5V) is NOT the absolute-maximum on the logic pins; consult the datasheet's input-clamp-current spec if the input is fed from a transformer.

Информация о соответствии

RoHS
Compliant
REACH
Compliant
AEC-Q100
Qualified
Без свинца
Yes
Без галогенов
Unknown
Конфликтные минералы
Compliant

AEC-Q100 qualified per IXYS product page. RoHS and REACH compliance per IXYS/Littelfuse product documentation. Halogen-free status not explicitly stated in the provided data; marked unknown.

Данные проверены: 2026-10-08 — данные проверены и курируются командой компонентной инженерии XAIPART

Похожие запросы

IXDD609SI IXDD609SI datasheet IXYS IXDD609SI 9A low-side gate driver 8-SOIC-EP IXDD609SI pinout AEC-Q100 gate driver IXYS IXDD609SI vs UCC27531 IXDD609SI drop-in replacement buy IXDD609SI in stock ultrafast MOSFET driver IXD_609 family IXDD609SI motor drive IGBT low-side gate driver 35V 9A automotive

Связанные компоненты & термины

IXYS Littelfuse IXDD609SI IXDN609SI IXDI609SI IXDD609SIA UCC27531DBVR gate driver low-side driver MOSFET driver IGBT driver Power SOIC 8-SOIC-EP AEC-Q100 RoHS REACH automotive electronics motor drive class-D amplifier SMPS synchronous rectifier three-phase inverter propagation delay rise time fall time latch-up immunity shoot-through protection exposed thermal pad Industrial 24V ISO 26262
Быстрый запрос цены (RFQ)
Заполните все данные — наша команда продаж ответит в течение 24 часов
Артикул Производитель Корпус QTY Целевая цена Итого
Итого: $0.00 USD
✓
Запрос цены отправлен!

Мы ответим на ваш email в течение 24 часов

1
RFQ отправлен
2
Предложение получено
3
Заказ оформлен
4
Оплата
5
Отправлено
6
Доставлено
Просмотреть детали RFQ