LMG3422R030RQZT - 600V 30mΩ GaN FET with Integrated Driver | TI
料号： LMG3422R030RQZT ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $12.5 | $12.50 |
| 10 | $11.25 | $112.50 |
| 100 | $10 | $1,000.00 |
| 500 | $9 | $4,500.00 |
| 1,000 | $8.1 | $8,100.00 |
LMG3422R030RQZT 概述
GaN FETs are a class of wide-bandgap power semiconductors that offer lower gate charge and faster switching than silicon MOSFETs, reducing switching losses and enabling higher power density. The LMG3422R030 integrates the driver and protection circuitry, simplifying design and improving reliability by minimizing parasitic inductance. This integration is part of a broader trend toward power management ICs that combine power stage and control for compact, efficient converters.
Key features include integrated overcurrent and overtemperature protection, a temperature reporting pin, and adjustable gate drive strength. The device supports a wide input voltage range and provides clean switching with minimal ringing, as highlighted in the datasheet. The low-inductance package and integrated driver enable higher switching SOA compared to discrete solutions.
The LMG3422R030 is ideal for applications such as server power supplies, telecom rectifiers, solar inverters, and electric vehicle onboard chargers, where high efficiency and power density are critical. Its 600-V rating and 30-mΩ RDS(on) make it suitable for totem-pole PFC, LLC converters, and other hard-switching topologies.
When designing with this device, ensure proper thermal management via the exposed pad and adequate PCB copper area. The integrated driver simplifies layout, but attention to gate drive loop and snubber design is recommended to minimize ringing. The device is available in tape and reel packaging, with pricing as of 2026-08-27.
直接替换替代料： LMG3422R030RQZT ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： LMG3422R030RQZT （相同外形与封装尺寸） ——差异在于 Drain-Source Voltage (VDS), Integrated Driver, Package.
快速对比工具——选择替代料号进行并排对比：
LMG3422R030RQZR
✅ 直接替换📋 参考替代料（不在目录中）
LMG3422R050RQZT
✅ 直接替换📋 参考替代料（不在目录中）
LMG3522R030RQSR
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$8.16 / 个
查看数据手册 →LMG3426R030
✅ 直接替换📋 参考替代料（不在目录中）
LMG3427R030
✅ 直接替换📋 参考替代料（不在目录中）
LMG3422R030RQZT 最大额定值与电气特性
| Drain-Source Voltage (VDS) | 600 V |
| On-Resistance (RDS(on)) | 30 mΩ |
| Continuous Drain Current | 40 A |
| 开关频率 | 2.2 MHz |
| Slew Rate | 20 V/ns to 150 V/ns |
| FET Hold-off | 200 V/ns |
| Integrated Driver | Yes |
| Protection | Overcurrent, Overtemperature |
| Temperature Reporting | Yes |
| 封装 | 54-VQFN (12x12 mm) |
| 安装类型 | Surface Mount |
| Qualification | JEDEC JEP180 |
| Gate Drive Strength | Adjustable |
| 工作温度 | -40°C to +125°C |
| RoHS 状态 | Compliant |
LMG3422R030RQZT 引脚配置
| 引脚 1 | VIN — Input supply for driver |
| 引脚 2 | VDD — Gate driver supply |
| 引脚 3 | PWM — PWM input |
| 引脚 4 | EN — Enable pin |
| 引脚 5 | FLT — Fault output |
| 引脚 6 | TEMP — Temperature reporting |
| 引脚 7 | GND — Ground |
| 引脚 8 | SW — Switch node |
| 引脚 9 | D — Drain of GaN FET |
| 引脚 10 | S — Source of GaN FET |
安全工作区
典型应用
LMG3422R030RQZT 适用于 6 应用s: Server Power Supplies, Telecom Rectifiers, Solar Inverters, Electric Vehicle Onboard Chargers, Industrial Power Supplies, Data Center Power.
Server Power Supplies
The LMG3422R030's 600-V rating and 30-mΩ RDS(on) enable high-efficiency, high-density power conversion in server PSUs. Its integrated driver simplifies layout and reduces parasitic inductance, while the 2.2-MHz switching frequency allows smaller magnetics. The device's overcurrent and overtemperature protection ensure reliable operation in demanding data center environments.
推荐
Telecom Rectifiers
In telecom rectifiers, the LMG3422R030 provides high efficiency and power density, reducing cooling requirements. Its fast switching (up to 150 V/ns) minimizes switching losses, and the integrated driver reduces component count. The device's JEDEC JEP180 qualification ensures robustness in hard-switching topologies like totem-pole PFC.
推荐
Solar Inverters
The LMG3422R030 is ideal for solar inverters, where high efficiency and reliability are paramount. Its 600-V rating handles typical DC bus voltages, and the low RDS(on) reduces conduction losses. The integrated temperature reporting allows real-time thermal monitoring, enabling adaptive control to maximize energy harvest.
推荐
Electric Vehicle Onboard Chargers
In EV onboard chargers, the LMG3422R030's high switching frequency and low losses enable compact, efficient designs. The integrated driver reduces gate drive complexity, and the protection features enhance system safety. The device's wide operating temperature range (-40°C to +125°C) suits automotive environments.
推荐
Industrial Power Supplies
The LMG3422R030 is suitable for industrial power supplies requiring high efficiency and reliability. Its 600-V rating and 30-mΩ RDS(on) allow operation from 3-phase mains. The integrated driver and protection simplify design, while the 2.2-MHz switching frequency reduces transformer size, saving board space.
推荐
Data Center Power
For data center power distribution, the LMG3422R030 offers high efficiency and power density, reducing energy costs. Its fast switching and low losses enable compact designs, and the integrated temperature reporting aids in thermal management. The device's protection features ensure reliable operation in 24/7 environments.
推荐
推荐产品汇总
工程参考数据： LMG3422R030RQZT ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | LMG3422R030RQZR | LMG3422R050RQZT | LMG3522R030RQSR |
|---|---|---|---|---|
| Package | 54-VQFN (12x12 mm) | 54-VQFN (12x12 mm) | 54-VQFN (12x12 mm) | 54-VQFN (12x12 mm) |
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
| Drain-Source Voltage | 600 V | 600 V | 600 V | 600 V |
| On-Resistance | 30 mΩ | 30 mΩ | 50 mΩ | 30 mΩ |
| Continuous Drain Current | 40 A | 40 A | 40 A | 40 A |
| Switching Frequency | 2.2 MHz | 2.2 MHz | 2.2 MHz | 2.2 MHz |
| Integrated Driver | Yes | Yes | Yes | Yes |
| Protection | Overcurrent, Overtemperature | Overcurrent, Overtemperature | Overcurrent, Overtemperature | Overcurrent, Overtemperature |
关键差异点
- Integrated driver reduces component count and parasitic inductance （对比 Discrete GaN FET + driver solutions)
- JEDEC JEP180 qualification for hard-switching topologies （对比 LMG3422R050)
- Lower RDS(on) than LMG3422R050 （对比 LMG3422R050)
设计说明
The LMG3422R030 can dissipate significant power at high currents. Ensure adequate PCB copper area and thermal vias under the exposed pad to keep junction temperature within limits. For 40 A continuous operation, a heatsink or forced airflow may be required.
Minimize the gate drive loop and power loop inductance by placing the device close to the controller and using low-inductance layout techniques. The integrated driver reduces external components, but proper decoupling of VDD and VIN is essential for stable operation.
Do not exceed the absolute maximum ratings for VDS and current. Ensure the PWM input is properly level-shifted and has adequate dead-time to prevent shoot-through. The temperature reporting pin should be monitored for overtemperature conditions.
合规信息
RoHS compliant per TI product page. Not AEC-Q100 qualified.
